Chemical Solution Deposited BaTi03 AND SrTi03 Thin Films With Columnar Microstructure

1997 ◽  
Vol 474 ◽  
Author(s):  
S. Hoffmann ◽  
U. Hasenkox ◽  
R. Waser ◽  
C. L. Jia ◽  
K. Urban
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Formation Process ◽  
Elevated Temperatures ◽  
Film Formation ◽  
Precursor Chemistry ◽  
Si Substrates ◽  
Transmission Electron ◽  
Columnar Grain ◽  
Means Of Transmission

ABSTRACTWe show that CSD processing can be optimized in order to achieve columnar structured BaTiO3 and SrTiO3 thin films at elevated temperatures. In addition to these, columnar grain growth was also obtained for films of the solid solution (Ba0.7Sr0.3)TiO3 By controlling the film formation process, polycrystalline and columnar grained thin films were grown on Pt coated Si substrates at temperatures between 750° and 800°. The films were analyzed by glancing incidence X-ray diffraction and scanning electron microscopy. Detailed analysis on the thin films’ microstructure was performed by means of transmission electron microscopy. Based on these data, the film formation process is discussed with respect to process control and precursor chemistry. Differences in the crystallization process of BaTiO3 thin films compared to SrTiO3 films are pointed out.

Characterization of Highly Textured PZT Thin Films Grown on LaNiO3 Coated Si Substrates by MOCVD

1997 ◽  
Vol 493 ◽  
Author(s):  
C. H. Lin ◽  
B. M. Yen ◽  
Haydn Chen ◽  
T. B. Wu ◽  
H. C. Kuo ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Fatigue Behavior ◽  
Chemical Vapor ◽  
Dielectric Constants ◽  
Preferential Orientation ◽  
Organic Chemical ◽  
Pzt Thin Films ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTHighly textured PbZrxTi1−xO3 (PZT) thin films with x= 0-0.6 were grown on LaNiO3 coated Si substrates at 600 °C by metal-organic chemical vapor deposition (MOCVD). The preferred crystalline orientation of PZT thin films with various Zr concentration were characterized by X-ray diffraction (XRD). Microstructures were studied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The dielectric constants, hysteresis and fatigue behavior of these thin films were also measured. The relationship between growth rate and the preferential orientation is discussed. Furthermore, the dependence of the electrical properties on Zr concentration and preferential orientation is demonstrated.

Mechanisms of misfit strain relaxation in epitaxially grown BLT (Bi4-xLaxTi3O12, x = 0.75) thin films

2003 ◽  
Vol 779 ◽  
Author(s):  
Hyung Seok Kim ◽  
Sang Ho Oh ◽  
Ju Hyung Suh ◽  
Chan Gyung Park
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Strain Relaxation ◽  
Lattice Misfit ◽  
Misfit Strain ◽  
Misfit Dislocations ◽  
Transmission Electron ◽  
Means Of Transmission ◽  
20 Nm

AbstractMechanisms of misfit strain relaxation in epitaxially grown Bi4-xLaxTi3O12 (BLT) thin films deposited on SrTiO3 (STO) and LaAlO3 (LAO) substrates have been investigated by means of transmission electron microscopy (TEM). The misfit strain of 20 nm thick BLT films grown on STO substrate was relaxed by forming misfit dislocations at the interface. However, cracks were observed in 100 nm thick BLT films grown on the same STO. It was confirmed that cracks were formed because of high misfit strain accumulated with increasing the thickness of BLT, that was not sufficiently relaxed by misfit dislocations. In the case of the BLT film grown on LAO substrate, the magnitude of lattice misfit between BLT and LAO was very small (~1/10) in comparison with the case of the BLT grown on STO. The relatively small misfit strain formed in layered structure of the BLT films on LAO, therefore, was easily relaxed by distorting the film, rather than forming misfit dislocations or cracks, resulting in misorientation regions in the BLT film.

A novel mosaic-like structure in SrTiO3 thin films on a Pt(001) surface revealed by transmission electron microscopy

1996 ◽  
Vol 11 (11) ◽  
pp. 2777-2784 ◽  
Author(s):  
S. Takeno ◽  
S. Nakamura ◽  
K. Abe ◽  
S. Komatsu
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
High Resolution Imaging ◽  
Antiphase Boundaries ◽  
Growth Modes ◽  
Transmission Electron ◽  
Interfacial Structures ◽  
Resolution Imaging ◽  
Means Of Transmission

A novel mosaic-like structure in SrTiO3 thin films was discovered and characterized by means of transmission electron microscopy (TEM). The films were deposited on a (001) oriented Pt surface. The orientation relationship between SrTiO3 film and Pt substrate was determined, and four types of growth modes were revealed. These four growth modes formed four types of domains, respectively, and these domains and Pt formed peculiarly ordered interfacial structures, i.e., near coincidence site lattices. Antiphase boundaries between two adjacent domains were also observed by high-resolution imaging.

Fracture processes in polystyrene

1975 ◽  
Vol 343 (1635) ◽  
pp. 525-535 ◽  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Fracture Surface ◽  
Fracture Process ◽  
Transmission Electron ◽  
Controlled Fracture ◽  
Means Of Transmission ◽  
Surface Morphologies ◽  
Fracture Processes

The model for the craze controlled fracture process in polystyrene has been developed further by taking into consideration the micromorphology of the crazes in which the nucleation and propagation of cracks occurs. The micromorphology of crazes formed in thin films of polystyrene, some of which had fractured, has been characterized by means of transmission electron microscopy. The observed micromorphological detail has been shown to be consistent with the micromorphology of the fracture surfaces of bulk specimens. In particular, the slow and fast regions of crack propagation which result in distinctly different fracture surface morphologies have been shown to be associated with differences in micromorphology which occur along the length of a craze.

Melt recrystallization behavior of carbon-coated melt-drawn oriented isotactic polypropylene thin films

2015 ◽  
Vol 6 (43) ◽  
pp. 7524-7532 ◽  
Author(s):  
Le Ma ◽  
Jie Zhang ◽  
Mushtaque A. Memon ◽  
Xiaoli Sun ◽  
Huihui Li ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Recrystallization Temperature ◽  
Melting Time ◽  
Recrystallization Behavior ◽  
Transmission Electron ◽  
Carbon Coated ◽  
Means Of Transmission ◽  
Temperature Melting

The melt recrystallization of vacuum carbon evaporated melt-drawn iPP thin films at varying melting temperature, melting time and recrystallization temperature was studied by means of transmission electron microscopy combined with electron diffraction.

DEFECTS OF A15 SMALL PARTICLES IN TUNGSTEN THIN FILMS

1996 ◽  
Vol 03 (01) ◽  
pp. 1191-1194 ◽  
Author(s):  
MASASHI ARITA ◽  
ISAO NISHIDA
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Crystal Defects ◽  
Type Structure ◽  
Special Structure ◽  
Small Particles ◽  
Structure Unit ◽  
Transmission Electron ◽  
Means Of Transmission

Crystal defects of A15 small particles in tungsten thin films were studied by means of transmission electron microscopy. Defects found in nanoscale crystals were analyzed to have special structure containing the Zr4Al3-type structure unit.

Interactions Of Evaporated Nickel And Silicon Thin Films

1985 ◽  
Vol 54 ◽  
Author(s):  
L. R. Zheng ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Single Crystal ◽  
Formation Temperature ◽  
Si Substrates ◽  
Silicon Thin Films ◽  
Transmission Electron ◽  
Amorphous Si ◽  
The Stability

ABSTRACTInteractions of evaporated Ni and Si thin films were investigated by a combination of backseat tering spectrometry and transmission electron microscopy. The presence of amorphous Si has no significant effects on Ni2Si and NiSi formation, but it drastically lowers the formation temperature of NiSi. Experiments with evaporated thin markers established that Ni is the dominant diffusing species in the growth of the three suicides. The stability of NiSi was examined by sequential evaporation of Ni34Si66 and Ni50Si50 thin films both on Si(100) and on evaporated Si substrates. The results showed that NiSi2 grows at the expence of NiSi when the stucture is in contact with evaporated Si, while it dissociates into NiSi and Si when in contact with single crystal Si.

Image processing to delineate defect structures in HREM images of vapor-deposited thin films

1989 ◽  
Vol 47 ◽  
pp. 128-129
Author(s):  
R.M. Fisher ◽  
J.Z. Duan ◽  
Crispin J. Hetherington ◽  
Norman Fowler
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Cross Sections ◽  
Failure Modes ◽  
Grain Structure ◽  
Intrinsic Stress ◽  
Plan View ◽  
Transmission Electron ◽  
Columnar Grain ◽  
Chromium Films

The resistance of deposited thin films to cracking or delamination from substrates during production or service, crucial to the long term reliability of IC devices, is under study as part of a broad program on interfacial bonding and adhesion. Chromium films, of particular interest because of their widespread use in microelectronics, are especially prone to mechanical failure due to the high residual stresses that are generally present and their low fracture toughness. Transmission and scanning electron microscopy are being used to define the columnar grain structure and failure modes and x-ray diffraction is being employed to determine the nature of through-thickness stress gradients that occur in such films.The intrinsic stress, as distinguished from the extrinsic stress caused by differential contraction between film and substrate during cooling from the deposition temperature, results from the presence of vacancies and diffuse “voids” trapped between the columns during deposition. Transmission electron microscopy of plan-view and cross-sections is being used in efforts to observe and define the structure of the inter-columnar regions.

Epitaxial Growth of SrTiO3 Thin Films on TiN/Si Substrates Using RF Sputtering

2006 ◽  
Vol 966 ◽  
Author(s):  
Chun Wang ◽  
Mark H Kryder
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Electron Diffraction ◽  
Electron Diffraction Pattern ◽  
Rf Sputtering ◽  
Epitaxial Relationship ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTEpitaxial SrTiO3 (001) thin films with a TiN template layer have been deposited on Si(001) single crystal substrates by RF sputtering. The deposited SrTiO3 films show a surface with roughness of 0.66nm. The orientation relationship was determined to be SrTiO3(001)[110]∥TiN(001)[110]∥Si(001)[110]. The microstructure and interface of the multilayer was studied using high resolution transmission electron microscopy (TEM). The electron diffraction pattern confirmed the epitaxial relationship between each layer.

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