Study of Electrical Transport Across Interfaces between Wide Gap Semiconductor and Metal Oxides

1997 ◽  
Vol 474 ◽  
Author(s):  
V. Talyansky ◽  
R. D. Vispute ◽  
R. P. Sharma ◽  
S. Choopun ◽  
M. J. Downes ◽  
...  
Keyword(s):  
Structural Analysis ◽  
Electrical Transport ◽  
Thermionic Emission ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Emission Model ◽  
Barrier Heights ◽  
Effective Barrier ◽  
Wide Gap ◽  
Thermionic Emission Model

ABSTRACTWe have grown YBa2Cu3O7 (YBCO) and Pr1.85Ce0.15CuO4 (PCCO) polycrystalline films on n-type GaN using pulsed laser deposition. The diodes fabricated out of these heterostructures exhibited a strong rectifying behavior with transport characteristics that were found to fit well to the thermionic emission model. The effective barrier heights for YBCO and PCCO based diodes were found to be 788 meV and 236 meV, respectively. Rutherford Backscattering structural analysis of the heterostructures is also discussed.

Mechanism of Contact Electrification

2021 ◽  
Vol 30 (1/2) ◽  
pp. 2-6
Author(s):  
Young-Joon KO ◽  
Dong Woo LEE ◽  
Jonghoon JUNG
Keyword(s):  
Charge Transfer ◽  
Thermionic Emission ◽  
Force Model ◽  
Emission Model ◽  
Intermolecular Force ◽  
Important Research ◽  
Charge Transfer Mechanism ◽  
Contact Electrification ◽  
Schottky Model ◽  
Thermionic Emission Model

Contact electrification has been a well-known phenomenon since B.C. 300. However, the origin of triboelectric charge and the charge transfer mechanism are not well understood. To date, the thermionic emission model, Schottky model, flexoelectric model, and intermolecular force model have been proposed for the contact electrification in conductors, semiconductors, and insulators. This article briefly introduces several important research results on the simple-seeming, but baffling, topic of contact electrification.

Ca2RuO4Thin Film Growth by Pulsed Laser Deposition

2004 ◽  
Vol 819 ◽  
Author(s):  
Xu Wang ◽  
Yan Xin ◽  
Hanoh Lee ◽  
Patricia A. Stampe ◽  
Robin J. Kennedy ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Electrical Transport ◽  
Film Growth ◽  
Pulsed Laser ◽  
High Sensitivity ◽  
Laser Deposition ◽  
Chemical Doping ◽  
Bulk Single Crystal ◽  
Electrical Transport Properties

AbstractBulk Ca2RuO4 is an antiferromagnetic Mott insulator with the metal-insulator transition above room temperature, and the Neel temperature at 113 K. There is strong coupling between crystal structures and magnetic, electronic phase transitions in this system. It exhibits high sensitivity to chemical doping and pressure that makes it very interesting material to study. We have epitaxially grown Ca2RuO4 thin films on LaAlO3 substrates by pulsed laser deposition technique. Growth conditions such as substrate temperature and O2 pressure were systematically varied in order to achieve high quality single-phase film. Crystalline quality and orientation of these films were characterized by X-ray diffractometry. Microstructure of the thin films was examined by transmission electron microscopy. The electrical transport properties were also measured and compared with bulk single crystal.

Structural analysis of infinite layer superlattices grown by pulsed laser deposition

1996 ◽  
Vol 80 (2) ◽  
pp. 781-786 ◽  
Author(s):  
A. Del Vecchio ◽  
L. Tapfer ◽  
C. Aruta ◽  
G. Balestrino ◽  
G. Petrocelli
Keyword(s):  
Structural Analysis ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Infinite Layer
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