In-Situ Stress Measurements During Dry Oxidation of Silicon

1997 ◽  
Vol 473 ◽  
Author(s):  
Chia-Liang Yu ◽  
Paul A. Flinn ◽  
John C. Bravman
Keyword(s):  
Oxide Thickness ◽  
In Situ Stress ◽  
Stress Generation ◽  
Ex Situ ◽  
Strong Function ◽  
One Dimensional ◽  
Dry Oxidation ◽  
In Situ Stress Measurements ◽  
Good Agreement

ABSTRACTIn this study, we present results of both in-situ and ex-situ measurements of stress generated during dry oxidation of silicon. We show that the mechanical stress in as-grown dry oxides is a strong function of oxidation temperature and oxide thickness, but a weak function of oxygen partial pressure. We have identified a structural relaxation phenomenon after the oxide is formed, and found that the viscosity of the oxide increases with its age; consequently, the stress relaxation slows down due to this increase of viscosity. In this paper, we present a one-dimensional mechanical model to simulate the stress generation and relaxation during dry oxidation of silicon. The simulations of both in-situ and ex-situ tests are in good agreement with the experimental measurements.

Size and critical thickness evolution during growth of stacked layers of InAs/InP(001) quantum wires studied by in situ stress measurements

2003 ◽  
Vol 794 ◽  
Author(s):  
David Fuster ◽  
María Ujué González ◽  
Luisa González ◽  
Yolanda González ◽  
Teresa Ben ◽  
...  
Keyword(s):  
Critical Thickness ◽  
Quantum Wires ◽  
High Energy ◽  
In Situ Stress ◽  
Ex Situ ◽  
Stress Measurements ◽  
Transmission Electron ◽  
In Situ Stress Measurements ◽  
20 Nm

ABSTRACTSize and spatial distribution homogeneity of nanostructures is greatly improved by making stacks of nanostructures separated by thin spacers. In this work we present in situ and in real time stress measurements and reflection high energy electron diffraction (RHEED) observations and ex situ transmission electron microscopy (TEM) characterization of stacked layers of InAs quantum wires (QWr) separated by InP spacer layers, d(InP), of thickness between 3 and 20 nm. For d(InP) < 20 nm, the amount of InAs involved in the newly created QWr from the 2nd stack layer on, exceeds that provided by the In cell. Our results suggest that in those cases InAs 3D islands formation starts at the P/As switching and lasts during further InAs deposition. We propose an explanation for this process that is strongly supported on TEM observations. The results obtained in this work imply that concepts like the existence of a critical thickness for 2D-3D growth mode transition should be revised in correlated QWr stacks of layers.

Atomic Layer Deposition of LiF and Lithium Ion Conducting (AlF3)(LiF)x Alloys Using Trimethylaluminum, Lithium Hexamethyldisilazide and Hydrogen Fluoride

2017 ◽  
Author(s):  
Younghee Lee ◽  
Daniela M. Piper ◽  
Andrew S. Cavanagh ◽  
Matthias J. Young ◽  
Se-Hee Lee ◽  
...  
Keyword(s):  
Lithium Ion ◽  
Atomic Layer ◽  
Mass Gain ◽  
Alloy Film ◽  
Ex Situ ◽  
X Ray ◽  
Layer Deposition ◽  
Ion Conducting ◽  
Good Agreement

<div>Atomic layer deposition (ALD) of LiF and lithium ion conducting (AlF<sub>3</sub>)(LiF)<sub>x</sub> alloys was developed using trimethylaluminum, lithium hexamethyldisilazide (LiHMDS) and hydrogen fluoride derived from HF-pyridine solution. ALD of LiF was studied using in situ quartz crystal microbalance (QCM) and in situ quadrupole mass spectrometer (QMS) at reaction temperatures between 125°C and 250°C. A mass gain per cycle of 12 ng/(cm<sup>2</sup> cycle) was obtained from QCM measurements at 150°C and decreased at higher temperatures. QMS detected FSi(CH<sub>3</sub>)<sub>3</sub> as a reaction byproduct instead of HMDS at 150°C. LiF ALD showed self-limiting behavior. Ex situ measurements using X-ray reflectivity (XRR) and spectroscopic ellipsometry (SE) showed a growth rate of 0.5-0.6 Å/cycle, in good agreement with the in situ QCM measurements.</div><div>ALD of lithium ion conducting (AlF3)(LiF)x alloys was also demonstrated using in situ QCM and in situ QMS at reaction temperatures at 150°C A mass gain per sequence of 22 ng/(cm<sup>2</sup> cycle) was obtained from QCM measurements at 150°C. Ex situ measurements using XRR and SE showed a linear growth rate of 0.9 Å/sequence, in good agreement with the in situ QCM measurements. Stoichiometry between AlF<sub>3</sub> and LiF by QCM experiment was calculated to 1:2.8. XPS showed LiF film consist of lithium and fluorine. XPS also showed (AlF<sub>3</sub>)(LiF)x alloy consists of aluminum, lithium and fluorine. Carbon, oxygen, and nitrogen impurities were both below the detection limit of XPS. Grazing incidence X-ray diffraction (GIXRD) observed that LiF and (AlF<sub>3</sub>)(LiF)<sub>x</sub> alloy film have crystalline structures. Inductively coupled plasma mass spectrometry (ICP-MS) and ionic chromatography revealed atomic ratio of Li:F=1:1.1 and Al:Li:F=1:2.7: 5.4 for (AlF<sub>3</sub>)(LiF)<sub>x</sub> alloy film. These atomic ratios were consistent with the calculation from QCM experiments. Finally, lithium ion conductivity (AlF<sub>3</sub>)(LiF)<sub>x</sub> alloy film was measured as σ = 7.5 × 10<sup>-6</sup> S/cm.</div>

In Situ X-Ray Diffraction Investigations during Diffusion Anneals of Ni-Cu Thin Film Diffusion Couples

2010 ◽  
Vol 89-91 ◽  
pp. 503-508 ◽  
Author(s):  
J. Sheng ◽  
U. Welzel ◽  
Eric J. Mittemeijer
Keyword(s):  
Thermal Stresses ◽  
Stress Generation ◽  
Ex Situ ◽  
Diffusion Annealing ◽  
X Ray Diffraction ◽  
Individual Layer ◽  
X Ray ◽  
Bilayer System ◽  
Stress Changes

The stress evolution during diffusion annealing of Ni-Cu bilayers (individual layer thicknesses of 50 nm) was investigated employing ex-situ and in-situ X-ray diffraction measurements. Annealing at relatively low homologous temperatures (about 0.3 - 0.4 Tm) for durations up to about 100 hours results in considerable diffusional intermixing, as demonstrated by Auger-electron spectroscopy investigations (in combination with sputter-depth profiling). In addition to thermal stresses due to differences of the coefficients of thermal expansion of layers and substrate, tensile stress con-tributions in the sublayers arise during the diffusion anneals. The obtained stress data have been discussed in terms of possible mechanisms of stress generation. The influence of diffusion on stress development in the sublayers of the diffusion couple during heating and isothermal annealing was investigated by comparing stress changes in the bilayer system with corresponding results obtained under identical conditions for single layers of the components in the bilayer system. The specific residual stresses that emerge due to diffusion between the (sub)layers in the bilayer could thereby be identified.

Estimation of the present-day stress field using in-situ stress measurements in the Alxa area, Inner Mongolia for China's HLW disposal

2017 ◽  
Vol 220 ◽  
pp. 76-84 ◽  
Author(s):  
Jianju Du ◽  
Xianghui Qin ◽  
Qingli Zeng ◽  
Luqing Zhang ◽  
Qunce Chen ◽  
...  
Keyword(s):  
Stress Field ◽  
Inner Mongolia ◽  
In Situ Stress ◽  
Stress Measurements ◽  
In Situ Stress Measurements
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