Structure and Chemistry of Ti Overlayers on α-Αl2O3(0001)

1997 ◽  
Vol 472 ◽  
Author(s):  
S. Bernath ◽  
T. Wagner ◽  
S. Hofmann ◽  
M. Rühle
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Room Temperature ◽  
Growth Stage ◽  
Molecular Beam ◽  
High Energy ◽  
Initial Growth ◽  
High Energy Electron ◽  
Incoherent Interface ◽  
Temperature Deposition

ABSTRACTTi thin films were grown by molecular-beam epitaxy (MBE) on α-Al2O3(0001) substrates. During room temperature deposition, in the very initial growth stage, AES investigations revealed a chemical reaction between the Ti and the α-Al2O3 substrate. An analysis of the AES data based on simple assumptions showed that ∼ 2 monolayers of Ti are oxidized. However, HRTEM analysis indicated an atomically smooth, incoherent interface, without a reaction layer. Reflection high-energy electron diffraction (RHEED) analysis revealed an epitaxial orientation relationship (0001)<2110> Ti ∥ (0001)<1010>Al2O3 between Ti and α-Al2O3(0001).

Initial Stages of Reactions between Monolayer Fe and Si(001) Surfaces

1995 ◽  
Vol 402 ◽  
Author(s):  
M. Hasegawa ◽  
N. Kobayashi ◽  
N. Hayashi
Keyword(s):  
Electron Diffraction ◽  
Room Temperature ◽  
High Energy ◽  
Rheed Pattern ◽  
High Energy Electron ◽  
Type B ◽  
Ion Scattering ◽  
Temperature Deposition ◽  
Hydrogen Termination

AbstractReactions between 1.5 monolayer(ML) Fe deposited on Si(001)-2 × 1 and -dihydride surfaces were studied in situ by reflection high-energy electron diffraction and time-of-flight ion scattering spectrometry with the use of 25 keV H ions. The reactions between Fe and Si which were successively deposited on Si(001)-dihydride surface were also studied. After the room temperature deposition Fe reacted with Si(001)-2 × 1 substrate resulting in the formation of polycrystalline Fe5Si3. By annealing to 560∼650°C composite heteroepitaxial layer of both type A and type B β -FeSi2 was formed. On the dihydride surface polycrystalline Fe was observed after 1.5ML Fe deposition at room temperature, and reaction between Fe and Si(001)-dihydride surface is not likely at room temperature. We observed 3D rough surface when we deposited only Fe layer on the dihydride surface and annealed above 700°C. The hydrogen termination of Si(001) surface prevents the deposited Fe from diffusing into the substrate below 500°C, however the annealing above 710°C leads to the diffusion. We obtained 2D ordered surface, which showed 3 × 3 RHEED pattern as referenced to the primitive unreconstructed Si(O01) surface net, when we deposited 2.5ML Fe and 5.8ML Si successively onto Si(001)-dihydride surface and annealed to 470°C.

Reflection high-energy electron diffraction based texture determination: Magnetic thin films for perpendicular media

2000 ◽  
Vol 87 (9) ◽  
pp. 5693-5695 ◽  
Author(s):  
Dmitri Litvinov ◽  
J. Kent Howard ◽  
Sakhrat Khizroev ◽  
Heng Gong ◽  
David Lambeth
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Magnetic Thin Films ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Perpendicular Media
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