Surface Preparation and Growth Condition Dependence of Cubic GaN Layer on (001) GaAs by Hydride Vapor Phase Epitaxy

1997 ◽  
Vol 468 ◽  
Author(s):  
H. Tsuchiya ◽  
K. Sunaba ◽  
S. Yonemura ◽  
T. Suemasu ◽  
F. Hasegawa
Keyword(s):  
Vapor Phase ◽  
Surface Preparation ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Buffer Layers ◽  
Condition Dependence ◽  
X Ray Diffraction ◽  
Cubic Gan ◽  
The Will

ABSTRACTGaN buffer layers and thick GaN layers were grown on (001) GaAs substrates by hydride vapor phase epitaxy. The ratio of cubic to hexagonal components in the grown layer was estimated from the ratio of the integrated X-ray diffraction intensities of the cubic (002) plane and hexagonal (1011) planes measured by w scan. The optimum growth conditions were thermal cleaning at 600°C, growth temperature of 500°C and thickness of 30 nm for the buffer layer, and the Will ratio of 300 for thick GaN growth at 800°C. Cubic component in the layer grown with those conditions was more than 85% and strong cubic photoluminescence emission was observed at 377 nm (3.28 eV).

scholarly journals Эпитаксия слоев GaN(0001) или GaN(1011) на подложке Si(100)

2019 ◽  
Vol 45 (11) ◽  
pp. 3
Author(s):  
В.Н. Бессолов ◽  
М.Е. Компан ◽  
Е.В. Коненкова ◽  
В.Н. Пантелеев ◽  
С.Н. Родин ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
Organic Vapor ◽  
Metal Organic ◽  
Aln Buffer ◽  
Semipolar Gan ◽  
Nanostructured Si

AbstractTwo different approaches to epitaxy of 4-μm-thick layers of polar GaN(0001) and semipolar GaN(10 $$\bar {1}$$ 1) on a V -shaped nanostructured Si(100) substrate with nanometer-thick SiC and AlN buffer layers have been experimentally demonstrated. The GaN(0001) layers were synthesized by hydride vapor-phase epitaxy, and GaN(10 $$\bar {1}$$ 1) layers, by metal-organic vapor-phase epitaxy, with the growth completed by hydride vapor-phase epitaxy. It was shown that layers of the polar GaN(0002) have a longitudinal elastic stress of –0.45 GPa and the minimum full width at half-maximum of the X-ray diffraction rocking curve ω_θ ~ 45 arcmin, whereas for the semipolar GaN(10 $$\bar {1}$$ 1), these values are –0.29 GPa and ω_θ ~ 22 arcmin, respectively. A conclusion is drawn that the combined technology of semipolar gallium nitride on a silicon (100) substrate is promising.

A Detailed Investigation of the Growth Conditions of Gallium Nitride Nanorods by Hydride Vapor Phase Epitaxy

2012 ◽  
Vol 51 (1) ◽  
pp. 01AF05 ◽  
Author(s):  
Min Jeong Shin ◽  
Min Ji Kim ◽  
Hun Soo Jeon ◽  
Hyung Soo Ahn ◽  
Sam Nyung Yi ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Vapor Phase ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Hydride vapor phase epitaxy growth of GaN on sapphire with ZnO buffer layers

2002 ◽  
Vol 74 (4) ◽  
pp. 537-540 ◽  
Author(s):  
S. Gu ◽  
R. Zhang ◽  
Y. Shi ◽  
Y. Zheng ◽  
L. Zhang ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Buffer Layers

Transport and Chemical Mechanisms in GaN Hydride Vapor Phase Epitaxy

2002 ◽  
Vol 743 ◽  
Author(s):  
Sergey Yu. Karpov ◽  
Alexander S. Segal ◽  
Darya V. Zimina ◽  
Sergey A. Smirnov ◽  
Alexander P. Sid'ko ◽  
...  
Keyword(s):  
Growth Rate ◽  
Vapor Phase ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Surface Kinetics ◽  
Chemical Mechanisms ◽  
Horizontal Reactor ◽  
Wide Range ◽  
Transport Effects

ABSTRACTOn the basis of both experimental and theoretical studies, a simple quasi-thermodynamic model of surface kinetics is suggested for Hydride Vapor Phase Epitaxy (HVPE) of GaN, working in a wide range of growth conditions. Coupled with detailed 3D modeling of species transport in a horizontal reactor, the model provides quantitative predictions for the GaN growth rate as a function of process parameters. Significance of transport effects on growth rate uniformity is demonstrated.

scholarly journals Effect of hydride vapor phase epitaxy growth conditions on the degree of atomic ordering in GaInP

2020 ◽  
Vol 128 (2) ◽  
pp. 025704
Author(s):  
Kevin L. Schulte ◽  
David R. Diercks ◽  
Dennice M. Roberts ◽  
Patricia C. Dippo ◽  
Corinne E. Packard ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Atomic Ordering

Growth of GaN on Buffer Layers with Different Polarities by Hydride Vapor-Phase Epitaxy

2007 ◽  
Vol 36 (4) ◽  
pp. 436-441 ◽  
Author(s):  
Kai Qiu ◽  
X.H. Li ◽  
F. Zhong ◽  
Z.J. Yin ◽  
X.D. Luo ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Buffer Layers

Bragg and Laue x-ray diffraction study of dislocations in thick hydride vapor phase epitaxy GaN films

2000 ◽  
Vol 88 (11) ◽  
pp. 6252-6259 ◽  
Author(s):  
V. Ratnikov ◽  
R. Kyutt ◽  
T. Shubina ◽  
T. Paskova ◽  
E. Valcheva ◽  
...  
Keyword(s):  
Diffraction Study ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
X Ray

Lateral and Vertical Growth Study in the Initial Stages of GaN Growth on Sapphire with ZnO Buffer Layers by Hydride Vapor Phase Epitaxy

2000 ◽  
Vol 622 ◽  
Author(s):  
Shulin Gu ◽  
Rong Zhang ◽  
Ling Zhang ◽  
T. F. Kuech
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Buffer Layers ◽  
Initial Growth ◽  
Lateral Growth ◽  
Subsequent Step ◽  
Lateral Growth Rate ◽  
High Supersaturation ◽  
Optimal Material

ABSTRACTThe initial stage of hydride vapor phase epitaxy GaN growth on ZnO-buffered sapphire is reported. A high supersaturation in the growth ambient was used to favor a rapid initial growth on the substrate. A subsequent step with high lateral growth rate was chosen to promote coalescence of the initial islands and provide optimal material properties. The specific mole fractions of the GaCl and NH3 control these vertical and lateral growth rates. The use of a two- step growth process in the GaN growth has led to improved and controlled morphology and high quality GaN materials have then been grown on sapphire substrate with and without ZnO buffer layers.

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