scholarly journals Effect of hydride vapor phase epitaxy growth conditions on the degree of atomic ordering in GaInP

2020 ◽  
Vol 128 (2) ◽  
pp. 025704
Author(s):  
Kevin L. Schulte ◽  
David R. Diercks ◽  
Dennice M. Roberts ◽  
Patricia C. Dippo ◽  
Corinne E. Packard ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Atomic Ordering

A Detailed Investigation of the Growth Conditions of Gallium Nitride Nanorods by Hydride Vapor Phase Epitaxy

2012 ◽  
Vol 51 (1) ◽  
pp. 01AF05 ◽  
Author(s):  
Min Jeong Shin ◽  
Min Ji Kim ◽  
Hun Soo Jeon ◽  
Hyung Soo Ahn ◽  
Sam Nyung Yi ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Vapor Phase ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Transport and Chemical Mechanisms in GaN Hydride Vapor Phase Epitaxy

2002 ◽  
Vol 743 ◽  
Author(s):  
Sergey Yu. Karpov ◽  
Alexander S. Segal ◽  
Darya V. Zimina ◽  
Sergey A. Smirnov ◽  
Alexander P. Sid'ko ◽  
...  
Keyword(s):  
Growth Rate ◽  
Vapor Phase ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Surface Kinetics ◽  
Chemical Mechanisms ◽  
Horizontal Reactor ◽  
Wide Range ◽  
Transport Effects

ABSTRACTOn the basis of both experimental and theoretical studies, a simple quasi-thermodynamic model of surface kinetics is suggested for Hydride Vapor Phase Epitaxy (HVPE) of GaN, working in a wide range of growth conditions. Coupled with detailed 3D modeling of species transport in a horizontal reactor, the model provides quantitative predictions for the GaN growth rate as a function of process parameters. Significance of transport effects on growth rate uniformity is demonstrated.

Microstructure of ELO-GaN Layers Grown by Hydride Vapor Phase Epitaxy

2001 ◽  
Vol 693 ◽  
Author(s):  
Silvija Gradecak ◽  
Volker Wagner ◽  
Marc Ilegems ◽  
Fabienne Bobard ◽  
Pierre Stadelmann
Keyword(s):  
Electron Microscopy ◽  
Vapor Phase ◽  
Vertical Direction ◽  
High Resolution Electron Microscopy ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Initial Stage ◽  
Resolution Electron ◽  
Microscopy Techniques

AbstractElectron microscopy techniques are applied to investigate structural properties of GaN layers selectively grown by hydride vapor phase epitaxy on crystalline and amorphous GaN seed layers deposited on (0001)Al2O3 substrates. Optimalization of the growth conditions lead to a reduction both of the stacking fault concentration and c-axis tilting in the laterally grown regions. During the lateral growth threading dislocations from the seed layer bend from vertical direction of propagation. Bending behavior depends on the type of the dislocation and on the shape of the GaN film in the initial stage of the growth. Optical properties of laterally grown regions are correlated with the high point-defect incorporation that is revealed by high-resolution electron microscopy.

Surface Preparation and Growth Condition Dependence of Cubic GaN Layer on (001) GaAs by Hydride Vapor Phase Epitaxy

1997 ◽  
Vol 468 ◽  
Author(s):  
H. Tsuchiya ◽  
K. Sunaba ◽  
S. Yonemura ◽  
T. Suemasu ◽  
F. Hasegawa
Keyword(s):  
Vapor Phase ◽  
Surface Preparation ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Buffer Layers ◽  
Condition Dependence ◽  
X Ray Diffraction ◽  
Cubic Gan ◽  
The Will

ABSTRACTGaN buffer layers and thick GaN layers were grown on (001) GaAs substrates by hydride vapor phase epitaxy. The ratio of cubic to hexagonal components in the grown layer was estimated from the ratio of the integrated X-ray diffraction intensities of the cubic (002) plane and hexagonal (1011) planes measured by w scan. The optimum growth conditions were thermal cleaning at 600°C, growth temperature of 500°C and thickness of 30 nm for the buffer layer, and the Will ratio of 300 for thick GaN growth at 800°C. Cubic component in the layer grown with those conditions was more than 85% and strong cubic photoluminescence emission was observed at 377 nm (3.28 eV).

A Detailed Investigation of the Growth Conditions of Gallium Nitride Nanorods by Hydride Vapor Phase Epitaxy

2012 ◽  
Vol 51 (1S) ◽  
pp. 01AF05 ◽  
Author(s):  
Min Jeong Shin ◽  
Min Ji Kim ◽  
Hun Soo Jeon ◽  
Hyung Soo Ahn ◽  
Sam Nyung Yi ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Vapor Phase ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Growth of GaN Nanorods on (0001) Sapphire Substrates by Hydride Vapor Phase Epitaxy

2002 ◽  
Vol 727 ◽  
Author(s):  
Hwa-Mok Kim ◽  
Doo Soo Kim ◽  
Young Wook Chang ◽  
Deuk Young Kim ◽  
Tae Won Kang
Keyword(s):  
Growth Rate ◽  
Vapor Phase ◽  
Substrate Surface ◽  
High Growth ◽  
Average Diameter ◽  
Growth Conditions ◽  
High Growth Rate ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Sapphire Substrates

AbstractGaN nanorods were grown on (0001) sapphire substrates by hydride vapor phase epitaxy HVPE) through a self-assemble process. The nanorods were grown at high growth rate, with the c-axis maintained perpendicular to the substrate surface. The dependence of rod diameter and density on growth conditions was systematically investigated. The average diameter was minimized to 80-120 nm and the density of the GaN nanorods was 100×1012 rods/m2.

scholarly journals Study on AlN growth conditions for hydride vapor phase epitaxy

2015 ◽  
Vol 40 (4) ◽  
pp. 395-396
Author(s):  
Daiki Yasui ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu ◽  
Takahiro Kawamura
Keyword(s):  
Vapor Phase ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Growth of GaN Nanorods by a Hydride Vapor Phase Epitaxy Method

2002 ◽  
Vol 14 (13-14) ◽  
pp. 991-993 ◽  
Author(s):  
H.-M. Kim ◽  
D.S. Kim ◽  
Y.S. Park ◽  
D.Y. Kim ◽  
T.W. Kang ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy
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