Theory of Gain in Group-HI Nitride Lasers

1997 ◽  
Vol 468 ◽  
Author(s):  
W. W. Chow ◽  
A. F. Wright ◽  
A. Girndt ◽  
F. Jahnke ◽  
S. W. Koch
Keyword(s):  
Kinetic Theory ◽  
Quantum Well ◽  
Microscopic Theory ◽  
Group Iii ◽  
Quantum Kinetic Theory ◽  
Quantum Well Laser ◽  
Group Iii Nitride ◽  
Excitonic Effects ◽  
Nitride Lasers

ABSTRACTA microscopic theory of gain in a group-III nitride quantum well laser is presented. The approach, which treats carrier correlations at the level of quantum kinetic theory, gives a consistent account of plasma and excitonic effects in an inhomogeneously broadened system.

Microscopic theory of gain for an InGaN/AlGaN quantum well laser

1997 ◽  
Vol 71 (18) ◽  
pp. 2608-2610 ◽  
Author(s):  
W. W. Chow ◽  
A. F. Wright ◽  
A. Girndt ◽  
F. Jahnke ◽  
S. W. Koch
Keyword(s):  
Quantum Well ◽  
Microscopic Theory ◽  
Quantum Well Laser

Wide-bandgap group-III nitride lasers

2002 ◽  
Author(s):  
Takashi Mukai ◽  
Shinichi Nagahama ◽  
Tomoya Yanamoto ◽  
Masahiko Sano
Keyword(s):  
Wide Bandgap ◽  
Group Iii ◽  
Group Iii Nitride ◽  
Nitride Lasers

scholarly journals Group III-nitride lasers: a materials perspective

2011 ◽  
Vol 14 (9) ◽  
pp. 408-415 ◽  
Author(s):  
Matthew T. Hardy ◽  
Daniel F. Feezell ◽  
Steven P. DenBaars ◽  
Shuji Nakamura
Keyword(s):  
Group Iii ◽  
Group Iii Nitride ◽  
Nitride Lasers

scholarly journals A Systematic Exploration of InGaN/GaN Quantum Well-Based Light Emitting Diodes on Semipolar Orientations -=SUP=-*-=/SUP=-

2022 ◽  
Vol 130 (3) ◽  
pp. 376
Author(s):  
Aparna Das
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Light Emitting Diodes ◽  
Visible Range ◽  
Internal Electric Field ◽  
Free Standing ◽  
Polar Plane ◽  
Light Emitting ◽  
Group Iii ◽  
Group Iii Nitride

Light-emitting diodes (LEDs) based on group III-nitride semiconductors (GaN, AlN, and InN) are crucial elements for solid-state lighting and visible light communication applications. The most widely used growth plane for group III-nitride LEDs is the polar plane (c-plane), which is characterized by the presence of a polarization-induced internal electric field in heterostructures. It is possible to address long-standing problems in group III-nitride LEDs, by using semipolar and nonpolar orientations of GaN. In addition to the reduction in the polarization-induced internal electric field, semipolar orientations potentially offer the possibility of higher indium incorporation, which is necessary for the emission of light in the visible range. This is the preferred growth orientation for green/yellow LEDs and lasers. The important properties such as high output power, narrow emission linewidth, robust temperature dependence, large optical polarization ratio, and low-efficiency droop are demonstrated with semipolar LEDs. To harness the advantages of semipolar orientations, comprehensive studies are required. This review presents the recent progress on the development of semipolar InGaN/GaN quantum well LEDs. Semipolar InGaN LED structures on bulk GaN substrates, sapphire substrates, free-standing GaN templates, and on Silicon substrates are discussed including the bright prospects of group III-nitrides. Keywords: Group III-nitride semiconductor, semipolar, light-emitting diodes, InGaN/GaN quantum well.

Raman gain in a Boron based Group-III nitride quantum well

2014 ◽  
Vol 70 ◽  
pp. 13-23 ◽  
Author(s):  
N. Narayana Moorthy ◽  
A. John Peter ◽  
Chang Woo Lee
Keyword(s):  
Quantum Well ◽  
Raman Gain ◽  
Group Iii ◽  
Group Iii Nitride
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