Microscopic theory of gain for an InGaN/AlGaN quantum well laser

1997 ◽  
Vol 71 (18) ◽  
pp. 2608-2610 ◽  
Author(s):  
W. W. Chow ◽  
A. F. Wright ◽  
A. Girndt ◽  
F. Jahnke ◽  
S. W. Koch
Keyword(s):  
Quantum Well ◽  
Microscopic Theory ◽  
Quantum Well Laser

Theory of Gain in Group-HI Nitride Lasers

1997 ◽  
Vol 468 ◽  
Author(s):  
W. W. Chow ◽  
A. F. Wright ◽  
A. Girndt ◽  
F. Jahnke ◽  
S. W. Koch
Keyword(s):  
Kinetic Theory ◽  
Quantum Well ◽  
Microscopic Theory ◽  
Group Iii ◽  
Quantum Kinetic Theory ◽  
Quantum Well Laser ◽  
Group Iii Nitride ◽  
Excitonic Effects ◽  
Nitride Lasers

ABSTRACTA microscopic theory of gain in a group-III nitride quantum well laser is presented. The approach, which treats carrier correlations at the level of quantum kinetic theory, gives a consistent account of plasma and excitonic effects in an inhomogeneously broadened system.

(InAs)1/(GaAs)2short period superlattice strained single quantum well laser on GaAs substrate

1993 ◽  
Vol 29 (1) ◽  
pp. 98-99 ◽  
Author(s):  
H. Kurakake ◽  
T. Uchida ◽  
H. Soda ◽  
S. Yamazaki
Keyword(s):  
Quantum Well ◽  
Gaas Substrate ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Laser

Band Structure and Optical Gain of 1.3 um GaAsSbN/GaAs Compressively Strained Quantum Well Laser

2007 ◽  
Vol 31 ◽  
pp. 95-97
Author(s):  
B. Dong ◽  
W.J. Fan ◽  
Y.X. Dang
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Optical Gain ◽  
Band Structures ◽  
Quantum Well Laser ◽  
Suitable Combination ◽  
Gain Spectra ◽  
Strained Quantum Well

The band structures and optical gain spectra of GaAsSbN/GaAs compressively strained quantum well (QW) were studied using 10-band k.p approach. We found that a higher Sb and N composition in the quantum well and a thicker well give longer emitting wavelength. The result also shows a suitable combination of Sb and N composition, and QW thickness can achieve 1.3 μm lasing. And, the optical gain spectra with different carrier concentrations will be obtained.

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