Comparison of Electron and Hole Initiated Impact Ionization in Zincblende and Wurtzite Phase Gallium Nitride

1997 ◽  
Vol 468 ◽  
Author(s):  
E. Bellotti ◽  
I. H. Oguzman ◽  
J. Kölnik ◽  
K. F. Brennan ◽  
R. Wang ◽  
...  
Keyword(s):  
Applied Field ◽  
Impact Ionization ◽  
Full Range ◽  
Wurtzite Phase ◽  
Valence Bands ◽  
Two Phases ◽  
Ionization Coefficients ◽  
Direct Numerical Integration ◽  
Applied Fields ◽  
Ionization Rates

ABSTRACTIn this paper, we present the first calculations of the electron and hole impact ionizatioi coefficients for both wurtzite and zincblende phase GaN as a function of the applied electrii field. The calculations are made using an ensemble Monte Carlo simulator including the ful details of the conduction and valence bands derived from an empirical pseudopotentia calculation. The interband impact ionization transition rates for both carrier species an determined by direct numerical integration including a wavevector dependent dielectric function It is found that the electron and hole ionization coefficients are comparable in zincblende Ga> at an applied field of ∼ 3 MV/cm, yet vary to a slight degree at both higher and lower applied field strengths. In the wurtzite phase, the electron and hole coefficients are comparable at hig] fields but diverge at lower applied fields. The most striking result is that the ionization rates an predicted to be substantially different for both carrier species between the two phases. It i predicted that the ionization rates for both carrier species in the zincblende phase are significanti; higher than in the wurtzite phase over the full range of applied fields examined.

Theoretical Prediction of Zinc Blende Phase GaN Avalanche Photodiode Performance Based on Numerically Calculated Electron and Hole Impact Ionization Rate Ratio

1996 ◽  
Vol 423 ◽  
Author(s):  
J. Kolnik ◽  
I. H. Oguzman ◽  
K. F. Brennan ◽  
R. Wang ◽  
P. P. Ruden
Keyword(s):  
Electric Field ◽  
Applied Electric Field ◽  
Impact Ionization ◽  
Full Range ◽  
Avalanche Photodiode ◽  
Ionization Rate ◽  
Zinc Blende ◽  
Valence Bands ◽  
Impact Ionization Rate ◽  
Ionization Rates

AbstractIn this paper, we present the first calculations of the electron and hole initiated interband impact ionization rate in zinc blende phase GaN as a function of the applied electric field strength. The calculations are performed using an ensemble Monte Carlo simulator including the full details of the conduction and valence bands along with a numerically determined, wave-vector dependent interband ionization transition rate determined from an empirical pseudopotential calculation. The first four conduction bands and first three valence bands, which fully comprise the energy range of interest for device simulation, are included in the analysis. It is found that the electron and hole ionization rates are comparable over the full range of applied electric field strengths examined. Based on these calculations an avalanche photodiode, APD, made from bulk zinc blende GaN then would exhibit poor noise and bandwidth performance. It should be noted however, that the accuracy of the band structure employed and the scattering rates is presently unknown since little experimental information is available for comparison. Therefore, due to these uncertainties, it is difficult to unequivocally conclude that the ionization rates are comparable.

Temperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC Photodiodes

2009 ◽  
Vol 615-617 ◽  
pp. 311-314 ◽  
Author(s):  
W.S. Loh ◽  
J.P.R. David ◽  
B.K. Ng ◽  
Stanislav I. Soloviev ◽  
Peter M. Sandvik ◽  
...  
Keyword(s):  
Phonon Scattering ◽  
Impact Ionization ◽  
Positive Temperature Coefficient ◽  
Positive Temperature ◽  
Different Temperatures ◽  
Ionization Coefficients ◽  
Increasing Temperature ◽  
The Impact ◽  
Good Agreement ◽  
Ionization Rates

Hole initiated multiplication characteristics of 4H-SiC Separate Absorption and Multiplication Avalanche Photodiodes (SAM-APDs) with a n- multiplication layer of 2.7 µm were obtained using 325nm excitation at temperatures ranging from 300 to 450K. The breakdown voltages increased by 200mV/K over the investigated temperature range, which indicates a positive temperature coefficient. Local ionization coefficients, including the extracted temperature dependencies, were derived in the form of the Chynoweth expression and were used to predict the hole multiplication characteristics at different temperatures. Good agreement was obtained between the measured and the modeled multiplication using these ionization coefficients. The impact ionization coefficients decreased with increasing temperature, corresponding to an increase in breakdown voltage. This result agrees well with the multiplication characteristics and can be attributed to phonon scattering enhanced carrier cooling which has suppressed the ionization process at high temperatures. Hence, a much higher electric field is required to achieve the same ionization rates.

Monte Carlo Based Calculation of Transport Parameters for Wide Band Gap Device Simulation

2000 ◽  
Vol 622 ◽  
Author(s):  
E. Bellotti ◽  
M. Farahmand ◽  
H.-E Nilsson ◽  
K. F. Brennan ◽  
P. P. Ruden
Keyword(s):  
Monte Carlo ◽  
Phonon Scattering ◽  
Impact Ionization ◽  
Monte Carlo Model ◽  
Wide Band ◽  
Transport Parameters ◽  
Wide Band Gap ◽  
Wurtzite Phase ◽  
Ensemble Monte Carlo ◽  
Ionization Coefficients

ABSTRACTWe present Monte Carlo based calculations of transport parameters useful in the simulation of III-nitride and SiC based devices. The calculations are performed using a full band ensemble Monte Carlo model that includes numerical formulations of the phonon scattering rates and impact ionization transition rates. Calculations are made for the wurtzite and zincblende phases of GaN, the wurtzite phase of InN, and the 3C (cubic) and 4H phases of SiC. The basic transport parameters determined are saturation drift velocity, and the ionization coefficients as a function of applied electric field. Results from the various materials are finally compared.

scholarly journals Impact Ionization Coefficients in (AlₓGa₁₋ₓ)0.52In0.48P and AlₓGa₁₋ₓAs Lattice-Matched to GaAs

2021 ◽  
pp. 1-6
Author(s):  
Harry I. J. Lewis ◽  
Liang Qiao ◽  
Jeng Shiuh Cheong ◽  
Aina N. A. P. Baharuddin ◽  
Andrey B. Krysa ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Ionization Coefficients ◽  
Lattice Matched

Measurement of the impact ionization rates in Al0.06Ga0.94Sb

1990 ◽  
Vol 57 (3) ◽  
pp. 249-251 ◽  
Author(s):  
H. Kuwatsuka ◽  
T. Mikawa ◽  
S. Miura ◽  
N. Yasuoka ◽  
Y. Kito ◽  
...  
Keyword(s):  
Impact Ionization ◽  
The Impact ◽  
Ionization Rates

scholarly journals Impact ionization coefficients in Si1−xGex

1995 ◽  
Vol 66 (2) ◽  
pp. 204-205 ◽  
Author(s):  
J. Lee ◽  
A. L. Gutierrez‐Aitken ◽  
S. H. Li ◽  
P. K. Bhattacharya
Keyword(s):  
Impact Ionization ◽  
Ionization Coefficients

Integrating Research and Practice: Looking Back

2017 ◽  
Vol 19 (3) ◽  
pp. 219-231 ◽  
Author(s):  
Jia Wang
Keyword(s):  
Human Resource Development ◽  
Human Resource ◽  
Applied Field ◽  
Real Life ◽  
Resource Development ◽  
Research And Practice ◽  
Viable Solution ◽  
Scholarly Practice ◽  
Applied Fields ◽  
Looking Back

The Problem The divide between research and practice has long been recognized by both scholars and practitioners in multiple applied fields, including our field of human resource development (HRD). Significant amount of energy has been devoted to identify ways to bridge the gap, yet the divide has remained noticeably wide. Developing scholar-practitioners is considered a viable solution, yet how to prepare them is not quite so clear. The Solution This issue provides an actionable plan by drawing upon the firsthand experiences and real-life examples from those who have successfully crossed the two worlds. By focusing on the how-to, this issue provides a tool box for multiple parties. The Stakeholders Three groups of stakeholders will benefit directly from this issue, scholar-practitioners, practitioners seeking scholarly practice, and scholars desiring to ground their research in practice. This issue will also benefit organizations, intermediaries, and HRD as an applied field.

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