X-Ray Photoelectron Diffraction Measurements of Hexagonal GaN(0004) Thin Films
Keyword(s):
X Ray
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ABSTRACTWe report on the first scanned-angle x-ray photoelectron diffraction measurements on GaN(0001) in the wurtzite structure, as grown on sapphire substrates using MOCVD. These as-grown samples reveal forward scattering peaks in agreement with a theoretical calculation using a single scattering cluster calculation. The surface contamination by O and C does not exhibit any clear structure. From the combination of experiment and theoretical calculation and from a simple intensity ratio argument the surface termination for these samples could be determined to be N. The data also indicate that C is on average closer to the GaN surface than O.
Keyword(s):
1987 ◽
Vol 42
(3)
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pp. 187-215
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1997 ◽
Vol 04
(06)
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pp. 1331-1335
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