Plasma Cleaning and Nitridation of Sapphire Substrates for AlxGa1-xN Epitaxy as Studied by ARXPS and XPD
Keyword(s):
X Ray
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ABSTRACTThe influence of plasma and thermal treatments on the structure and composition of sapphire (00–1) surfaces have been studied by hemispherically recorded x-ray photoelectron spectroscopy in view of substrate preparation for the epitaxy of GaN. Producing well-ordered surfaces, O2 plasma based treatments are found to efficiently remove surface contamination. AlN films with good short-range order are obtained by a simple high temperature nitridation step in the MOCVD reactor.
1995 ◽
Vol 02
(02)
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pp. 141-145
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Studies of short-range order in amorphous Ge x Se100−x compounds by X-ray photoelectron spectroscopy
1994 ◽
Vol 69
(2)
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pp. 209-222
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Keyword(s):
2011 ◽
Vol 357
(7)
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pp. 1797-1803
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1982 ◽
Vol 43
(11)
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pp. 1699-1706
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2014 ◽
Vol 2
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pp. 73-94
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