Polar-Twinned Defects in LiGaO2 Substrates Lattice Matched with GaN

1997 ◽  
Vol 468 ◽  
Author(s):  
Takao Ishii ◽  
Yasuo Tazoh ◽  
Shintaro Miyazawa
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Domain Structure ◽  
Chemical Stability ◽  
Chemical Etching ◽  
Czochralski Growth ◽  
Polarity Inversion ◽  
Lattice Matched

ABSTRACTWe investigated the Czochralski growth of LiGaO2 single crystal for use as a substrates for the epitaxial growth of hexagonal GaN. Crossed lines were observed in mechano-chemically polished {001} wafers sliced from a (001) axis boule. Chemical etching revealed that there exists a difference in chemical stability between two domains separated by a crossed line. Since LiGaO2 single crystal is polar along the c-axis, the formation of multi-domain structure is due to the polarity inversion of the c-axis, that is, polar twinned defects. We found that the GaN thin film on the (001) substrate with a multi-domain structure peeled off and that this is closely related with multi-polarity of substrate.

Growth and Etching Studies of MgO-Doped LiNbO3 Single Crystal

2010 ◽  
Vol 663-665 ◽  
pp. 1133-1136
Author(s):  
Xin Hua Li ◽  
Jia Yue Xu ◽  
Min Jin ◽  
Hui Shen ◽  
Bao Liang Lu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Domain Structure ◽  
Chemical Etching ◽  
Growth Parameters ◽  
Optical Microscope ◽  
Optical Material ◽  
Bridgman Growth ◽  
Linbo3 Crystal ◽  
Etch Pits ◽  
Damage Resistance

LiNbO3 (Mg:LN) crystal is an important electro-optical material and MgO-doped LiNbO3 was expected to improve its optical damage resistance. In the present work, we reported the Bridgman growth of MgO-doped LiNbO3 crystal. The growth parameters were discussed and the defects were investigated by the chemical etching method. The etch hillocks and etch pits were observed on the negative Z surface while only etch pits on the positive Z surface by the optical microscope and EPMA. The etching morphology was discussed considering the domain structure.

Photovoltaic Phenomena in Thin Film ZnTe-CdSe Heterojunctions

2001 ◽  
Author(s):  
Alexandru Focsha ◽  
Petru Gashin ◽  
Alexei Simashkevich
Keyword(s):  
Thin Film ◽  
Thin Layer ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Vapor Phase ◽  
Doping Level ◽  
Spectral Dependence ◽  
Wavelength Region

Abstract Thin layer ZnTe-CdSe heterojunctions were produced by vapor phase epitaxial growth of ZnTe and CdSe layers on mica and single-crystal ZnSe substrates. These heterojunctions photosensitivity covers the wavelength region of 0.56–0.85 μm. The shape of photosensitivity spectral dependence of ZnTe-CdSe heterojunction depends on the components thickness and their doping level. Thin layer ZnTe-CdSe epitaxial heterojunction parameters under illumination of 80 mW/cm2 (AM1.5) are: FF=0.53, Uoc=0.72V, Isc=14.8 mA/cm2, efficiency η=7.1%. Thin film polycrystalline ZnTe-CdSe heterojunctions having the efficiency η=4.3%, Uoc=0.54 V, Isc=10.6 mA/cm2 were fabricated by using As or Cu doped ZnTe layers and In doped CdSe layers produced by HWT.

Homo-Epitaxial Growth of YBCO Thin Film on YBCO Single Crystal

1994 ◽  
pp. 995-998 ◽  
Author(s):  
M. Konishi ◽  
K. Hayashi ◽  
A. Odagawa ◽  
Y. Enomoto ◽  
Y. Yamada ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Ybco Thin Film ◽  
Ybco Single Crystal

Epitaxial growth of sol-gel derived BiScO3–PbTiO3 thin film on Nb-doped SrTiO3 single crystal substrate

2007 ◽  
Vol 90 (20) ◽  
pp. 202902 ◽  
Author(s):  
Hai Wen ◽  
Xiaohui Wang ◽  
Caifu Zhong ◽  
Like Shu ◽  
Longtu Li
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Sol Gel ◽  
Single Crystal Substrate ◽  
Pbtio3 Thin Film ◽  
Crystal Substrate

Single-crystal SiC thin-film produced by epitaxial growth and its application to micro-mechanical devices

2008 ◽  
Vol 516 (16) ◽  
pp. 5344-5348 ◽  
Author(s):  
Nobuyuki Moronuki ◽  
Masayuki Kojima ◽  
Akira Kakuta
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Single Crystal Sic ◽  
Mechanical Devices

Interaction of A12O3-CAPPED Au/Zn/Au and Au/Te/Au Contacts With (001)GaAs Substrates

1992 ◽  
Vol 260 ◽  
Author(s):  
X. W. Lin ◽  
Z. Liliental-Weber ◽  
J. Washburn ◽  
A. Piotrowska ◽  
E. Kaminska
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Cross Sections ◽  
Closed System ◽  
Vapor Deposition ◽  
Metal Contacts ◽  
Flat Interface ◽  
Gaas Substrates ◽  
Ordered Phases

ABSTRACTHREM,TEM, and EDX were employed to study the cross sections of Au/Zn/Au and Au/Te/Au contacts to [001]-oriented GaAs substrates. The metal contacts fabricated by sequential vapor deposition were capped with an A12O3 thin film to form a closed system when subjected to a 420°C anneal for 3 min. For an as-deposited Au/Zn/Au/GaAs specimen, Zn was found to react with Au to form ordered phases of Au3Zn. These phases were found to be stable upon annealing. The interface between the annealed metallization and GaAs exhibited the same degree of uniformity and planarity as that of the as-deposited specimen. For a Au/Te/Au/GaAs specimen, annealing resulted in epitaxial growth of Ga2Te3 grains, forming a basically flat interface with GaAs, while Au single-crystal grains were found to protrude rather extensively into GaAs to form a facetted interface with the substrate.

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