Interaction of A12O3-CAPPED Au/Zn/Au and Au/Te/Au Contacts With (001)GaAs Substrates

1992 ◽  
Vol 260 ◽  
Author(s):  
X. W. Lin ◽  
Z. Liliental-Weber ◽  
J. Washburn ◽  
A. Piotrowska ◽  
E. Kaminska
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Cross Sections ◽  
Closed System ◽  
Vapor Deposition ◽  
Metal Contacts ◽  
Flat Interface ◽  
Gaas Substrates ◽  
Ordered Phases

ABSTRACTHREM,TEM, and EDX were employed to study the cross sections of Au/Zn/Au and Au/Te/Au contacts to [001]-oriented GaAs substrates. The metal contacts fabricated by sequential vapor deposition were capped with an A12O3 thin film to form a closed system when subjected to a 420°C anneal for 3 min. For an as-deposited Au/Zn/Au/GaAs specimen, Zn was found to react with Au to form ordered phases of Au3Zn. These phases were found to be stable upon annealing. The interface between the annealed metallization and GaAs exhibited the same degree of uniformity and planarity as that of the as-deposited specimen. For a Au/Te/Au/GaAs specimen, annealing resulted in epitaxial growth of Ga2Te3 grains, forming a basically flat interface with GaAs, while Au single-crystal grains were found to protrude rather extensively into GaAs to form a facetted interface with the substrate.

Photovoltaic Phenomena in Thin Film ZnTe-CdSe Heterojunctions

2001 ◽  
Author(s):  
Alexandru Focsha ◽  
Petru Gashin ◽  
Alexei Simashkevich
Keyword(s):  
Thin Film ◽  
Thin Layer ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Vapor Phase ◽  
Doping Level ◽  
Spectral Dependence ◽  
Wavelength Region

Abstract Thin layer ZnTe-CdSe heterojunctions were produced by vapor phase epitaxial growth of ZnTe and CdSe layers on mica and single-crystal ZnSe substrates. These heterojunctions photosensitivity covers the wavelength region of 0.56–0.85 μm. The shape of photosensitivity spectral dependence of ZnTe-CdSe heterojunction depends on the components thickness and their doping level. Thin layer ZnTe-CdSe epitaxial heterojunction parameters under illumination of 80 mW/cm2 (AM1.5) are: FF=0.53, Uoc=0.72V, Isc=14.8 mA/cm2, efficiency η=7.1%. Thin film polycrystalline ZnTe-CdSe heterojunctions having the efficiency η=4.3%, Uoc=0.54 V, Isc=10.6 mA/cm2 were fabricated by using As or Cu doped ZnTe layers and In doped CdSe layers produced by HWT.

Homo-Epitaxial Growth of YBCO Thin Film on YBCO Single Crystal

1994 ◽  
pp. 995-998 ◽  
Author(s):  
M. Konishi ◽  
K. Hayashi ◽  
A. Odagawa ◽  
Y. Enomoto ◽  
Y. Yamada ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Ybco Thin Film ◽  
Ybco Single Crystal

Epitaxial growth of sol-gel derived BiScO3–PbTiO3 thin film on Nb-doped SrTiO3 single crystal substrate

2007 ◽  
Vol 90 (20) ◽  
pp. 202902 ◽  
Author(s):  
Hai Wen ◽  
Xiaohui Wang ◽  
Caifu Zhong ◽  
Like Shu ◽  
Longtu Li
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Sol Gel ◽  
Single Crystal Substrate ◽  
Pbtio3 Thin Film ◽  
Crystal Substrate

scholarly journals Piezo-Hall effect in single crystal p-type 3C–SiC(100) thin film grown by low pressure chemical vapor deposition

RSC Advances ◽  
2016 ◽  
Vol 6 (37) ◽  
pp. 31191-31195 ◽  
Author(s):  
Afzaal Qamar ◽  
H.-P. Phan ◽  
Toan Dinh ◽  
Li Wang ◽  
Sima Dimitrijev ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Hall Effect ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
First Results ◽  
Pressure Chemical ◽  
P Type

This article reports the first results on piezo-Hall effect in single crystal p-type 3C–SiC(100) Hall devices.

A Comparison of Arsine and Tertiarybutylarsine as Precursors for the Selective Epitaxial Growth of GaAs and AlGaAs

1990 ◽  
Vol 204 ◽  
Author(s):  
F.T.J. Smith
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
Polycrystalline Material ◽  
Low Pressure ◽  
Selective Growth ◽  
Group V ◽  
Selective Epitaxial Growth ◽  
Crystal Material ◽  
Gaas Substrates ◽  
Increasing Temperature

ABSTRACTWe have investigated the use of tertiarybutylarsine (tBAs) as an As source in the surface-selective growth of GaAs and AlGaAs by low-pressure OMVPE. Deposition was carried out onto GaAs substrates partly masked with SiNx. Triethylgallium (TEGa) and trimethylaluminum (TMAl) were used as precursors along with either arsine or tBAs. Growth pressures were in the range 0.3 to 3.0 Torr. The usual trends of decreasing deposition on the mask with increasing temperature, decreasing group V/III ratio, and decreasing pressure were observed. At very low group V/III ratios, for either As precursor, single crystal material with a pitted surface was obtained. A reduction in the nucleation of polycrystalline material on the mask was observed when tBAs was used in place of AsH3.

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