Al/ZnO/a-SiGe:H: A System Protected by the ZnO Buffer from Metal-Induced Crystallization

1997 ◽  
Vol 467 ◽  
Author(s):  
F. Edelman ◽  
R. Brener ◽  
C. Cytermann ◽  
R. Weil ◽  
C. Beneking ◽  
...  
Keyword(s):  
Mass Spectroscopy ◽  
Barrier Properties ◽  
Amorphous Semiconductors ◽  
X Ray Diffraction ◽  
X Ray ◽  
Metal Induced Crystallization ◽  
Amorphous System ◽  
Al Metallization ◽  
Secondary Ion ◽  
Induced Crystallization

ABSTRACTMetal-Induced-Crystallization (MIC) by the contact of amorphous semiconductors with metals is one of the degradation factors in solar cells. This study has been made on the barrier properties of a ZnO layer between undoped a-SiGe:H and Al metallization films in the structure (001)Si/SiO2/a-SiGe:H/ZnO/Al. Plasma assisted CVD deposition was used to produce a-Si1.xGex:H (x=0 to 1) undoped films over thermally oxidized Si-wafers. There were covered with 500Å and 1000Å thick transparent conductive layers of ZnO. Al and then 1000Å thick films of Al. A set of Al-implanted a-Si, a-Ge, and a-Sio.5Geo.5 films on Si/SiO2 substrates was also prepared to study MIC in an amorphous system with dispersed Al. The structures were annealed in vacuum in the temperature range of 200°C to 400°C for lh. X-ray diffraction studies demonstrated the a-SiGe:H stability against crystallization under ZnO protection up to 400°C. Secondary Ion Mass Spectroscopy didn't reveal any noticeable redistribution of Al inside Al-implanted a-Si:H and a-Si0.5Ge0.5:H samples after annealing at 400°C for lh, but strong Al diffusion was seen in the a-Ge:H layer. Nevertheless, no MIC was observed in any of the Al-implanted a-materials.

Inhibition of Metal Induced Crystallization in the System Ag/ZnO/a-Si:H

1996 ◽  
Vol 420 ◽  
Author(s):  
F. Edelman ◽  
R. Brener ◽  
C. Cytermann ◽  
R. Weil ◽  
C. Beneking ◽  
...  
Keyword(s):  
Barrier Properties ◽  
Peak Position ◽  
Systematic Investigation ◽  
X Ray Diffraction ◽  
Zno Film ◽  
X Ray ◽  
Metal Induced Crystallization ◽  
Transmission Electron ◽  
Additional Strain ◽  
Induced Crystallization

AbstractA systematic investigation has been made on the barrier properties of ZnO layer between ndoped a-Si:H and Ag metallization films in the structures (001)Si/SiO2/Ag/ZnO/a-Si:H:P and (001)Si/SiO2/a-Si:H:P/ZnO/Ag. Plasma assisted CVD deposition was used to produce a-Si:H (2500Å thick) highly P-doped films over thermally oxidized Si-wafers at 190 and 270°C. Transparent conductive ZnO:A1 layers, 1000Å and lμm thickness, and Ag films (1000Å thick) were deposited by sputtering. The polycrystalline ZnO layers were textured along the <0001> axis in the as-deposited state. The structures were annealed in vacuum in the temperature range from 300 to 700°C for 1/4 to 16h. X-ray diffraction and transmission electron microscopy studies demonstrated the a-Si:H:P stability against crystallization under ZnO buffer protection up to 700°C (when free a-Si crystallizes itself). The (111) peak position of the Ag reflection was used to show that while the Ag was always strained, the strain was partially relaxed when in contact with the 0. 1 μm ZnO film, it developed additional strain when in contact with the I μm ZnO film.

Inhibition of Metal Induced Crystallization in the System Ag/ZnO/a-Si:H

1996 ◽  
Vol 426 ◽  
Author(s):  
F. Edelman ◽  
R. Brener ◽  
C. Cytermann ◽  
R. Weil ◽  
C. Beneking ◽  
...  
Keyword(s):  
Barrier Properties ◽  
Peak Position ◽  
Systematic Investigation ◽  
X Ray Diffraction ◽  
Zno Film ◽  
X Ray ◽  
Metal Induced Crystallization ◽  
Transmission Electron ◽  
Additional Strain ◽  
Induced Crystallization

AbstractA systematic investigation has been made on the barrier properties of ZnO layer between ndoped a-Si:H and Ag metallization films in the structures (001)Si/SiO2/Ag/ZnO/a-Si:H:P and (001)Si/SiO2/a-Si:H:P/ZnO/Ag. Plasma assisted CVD deposition was used to produce a-Si:H (2500Å thick) highly P-doped films over thermally oxidized Si-wafers at 190 and 270°C. Transparent conductive ZnO:AI layers, 1000Å and lμm thickness, and Ag films (1000Å thick) were deposited by sputtering. The polycrystalline ZnO layers were textured along the <0001> axis in the as-deposited state. The structures were annealed in vacuum in the temperature range from 300 to 700°C for 1/4 to 16h. X-ray diffraction and transmission electron microscopy studies demonstrated the a-Si:H:P stability against crystallization under ZnO buffer protection up to 700°C (when free a-Si crystallizes itself). The (111) peak position of the Ag reflection was used to show that while the Ag was always strained, the strain was partially relaxed when in contact with the 0. 1μm ZnO film, it developed additional strain when in contact with the 1μm ZnO film.

The Study of High Temperature Annealing of a-SiC:H Films

2006 ◽  
Vol 514-516 ◽  
pp. 18-22
Author(s):  
Shibin Zhang ◽  
Z. Hu ◽  
Leandro Raniero ◽  
X. Liao ◽  
Isabel Ferreira ◽  
...  
Keyword(s):  
High Temperature ◽  
Chemical Vapor ◽  
Nitrogen Atmosphere ◽  
High Temperature Annealing ◽  
X Ray Diffraction ◽  
X Ray ◽  
Metal Induced Crystallization ◽  
Vapor Deposition Technique ◽  
Crystallization Effect ◽  
Induced Crystallization

A series of amorphous silicon carbide films were prepared by plasma enhanced chemical vapor deposition technique on (100) silicon wafers by using methane, silane, and hydrogen as reactive resources. A very thin (around 15 Å) gold film was evaporated on the half area of the a- SiC:H films to investigate the metal induced crystallization effect. Then the a-SiC:H films were annealed at 1100 0C for 1 hour in the nitrogen atmosphere. Fourier transform infrared spectroscopy (FTIR), X-Ray diffraction (XRD), and scanning electron microscopy (SEM) were employed to analyze the microstructure, composition and surface morphology of the films. The influences of the high temperature annealing on the microstructure of a-SiC:H film and the metal induced metallization were investigated.

In situ x-ray diffraction study of metal induced crystallization of amorphous germanium

2009 ◽  
Vol 105 (8) ◽  
pp. 083532 ◽  
Author(s):  
W. Knaepen ◽  
S. Gaudet ◽  
C. Detavernier ◽  
R. L. Van Meirhaeghe ◽  
J. Jordan Sweet ◽  
...  
Keyword(s):  
Diffraction Study ◽  
X Ray Diffraction ◽  
Amorphous Germanium ◽  
X Ray ◽  
Metal Induced Crystallization ◽  
Induced Crystallization

Study of Molybdenum-Alusil Interdiffusion Kinetics and Contact Resistance for VLSI Applications

1985 ◽  
Vol 54 ◽  
Author(s):  
R. N. Singh ◽  
D. M. Brown ◽  
M. J. Kim ◽  
G. A. Smith
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Contact Resistance ◽  
Mass Spectroscopy ◽  
X Ray Diffraction ◽  
Compound Formation ◽  
X Ray ◽  
Interdiffusion Kinetics ◽  
Secondary Ion ◽  
Complete Transformation

ABSTRACTInterdiffusion barrier characteristics of molybdenum thin films with Alusil(Al-1% Si) is studied between 733 and 7 63 K via sheet and contact resistance measurements, Rutherford backseattering spectrometry, secondary ion mass spectroscopy, and x-ray diffraction analysis. The results indicate that thermal annealing of Mo/Alusil thin film couples leads to MoAl compound formation initially as a nonplanar front, but extensive annealing results in complete transformation of Alusil to MoAl12 and a significant increase in contact resistance. The interdiffusion kinetics is studied and implications of these observations to VLSI device characteristics is discussed. Based on these results a safe time-temperature processing regime is proposed.

High Quality GaP Growth on Si Substrates By Mocvd

1988 ◽  
Vol 116 ◽  
Author(s):  
K. Uchida ◽  
Y. Kohama ◽  
M. Tajima ◽  
T. Soga ◽  
T. Jimbo ◽  
...  
Keyword(s):  
Mass Spectroscopy ◽  
Diffraction Peak ◽  
Crystal Quality ◽  
X Ray Diffraction ◽  
High Quality ◽  
Double Crystal ◽  
X Ray ◽  
Si Substrates ◽  
Secondary Ion

AbstractGaP crystals are grown on Si substrates by MOCVD. Double crystal X-ray diffraction indicates that the crystal quality of GaP layers greatly improves when AsH3 is supplied before growth. The FWHM of (400) diffraction peak of the GaP layer decreases as the thickness increases and the best FWHM of 112.5 arcs is obtained at a thickness of 5 μm. The GaP/Si interface is characterized using secondary ion mass spectroscopy (SIMS) to demonstrate the effect of AsH3.

Nitriding of Zirconia by Irradiation with NdrYAG Laser Beam

1995 ◽  
Vol 397 ◽  
Author(s):  
S. Fujitsu ◽  
M. Sawai ◽  
K. Kawamura ◽  
H. Hosono
Keyword(s):  
Laser Beam ◽  
Mass Spectroscopy ◽  
Nd:Yag Laser ◽  
Zirconium Nitride ◽  
X Ray Diffraction ◽  
Stabilized Zirconia ◽  
Zirconia Ceramics ◽  
Partially Stabilized Zirconia ◽  
X Ray ◽  
Secondary Ion

ABSTRACTThe surface of partially stabilized zirconia ceramics was irradiated by a Nd:YAG laser in various atmospheres. Zirconia strongly absorbed YAG's laser beam and changed its chemistry and microstructure. The change of color of zirconia into gold was due to the formation of zirconium nitride (ZrN) observed on the irradiated surface in air, nitrogen or ammonia, which was confirmed by X-ray diffraction and secondary ion mass spectroscopy. The observed ZrN phase was 10-20 um in thickness at the irradiated area by the direct beam. The adhesion between formed ZrN and YSZ substrate was very weak.

Effect of Ar Sputtering Pretreatment on the Electromigration Resistance in Al-Cu/TiN/Ti Interconnects

1998 ◽  
Vol 516 ◽  
Author(s):  
L.P. Wang ◽  
A. Chuang ◽  
L.T. Lin ◽  
F.S. Huang ◽  
K. Perng ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Mass Spectroscopy ◽  
Concentration Distribution ◽  
Auger Electron ◽  
Elemental Concentration ◽  
X Ray Diffraction ◽  
X Ray ◽  
Peak Intensity ◽  
Secondary Ion ◽  
A Current

AbstractThe 1 µm-wide Al-0.5wt%Cu/TiN/Ti interconnect, on the oxidized Si(100) wafer without Al sputtering pretreatment on the SiO2 surface prior to Ti deposition, failed after stressing with a current density of 1 × 106 A/cm2 for 190 hr at 175°C. In contrast, the interconnect with Ar sputtering pretreatment did not fail after stressing under the same condition for 550 hr. X-ray diffraction spectra indicated that the Ar sputtering pretreatment lowered Al(111) peak intensity down to 1/46 of its magnitude. This result suggests that the improvement of electromigration resistance by Ar sputtering pretreatment is not due to Al(111) texture, which is opposite to the result of Shibata et al. (Jpn. J. Appl. 32, 4479 (1993)). The elemental concentration distribution in depth was characterized on Al-Cu/TiN/Ti multilayers with and without Ar sputtering pretreatment by using secondary ion mass spectroscopy and Auger electron microscopy. A fairly large amount of oxygen and nitrogen was found to segregate near the Al-Cu/TiN interface. The phenomenon associated with the large amount of segregated oxygen and nitrogen is attributed to the enhancement of electromigration resistance.

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