Observation of Improved Structural Ordering in Low H Content, Hot wire Deposited a-Si:H

1997 ◽  
Vol 467 ◽  
Author(s):  
A. H. Mahan ◽  
D. L. Williamson ◽  
T. E. Furtak
Keyword(s):  
Substrate Temperature ◽  
Phonon Mode ◽  
Bond Angle ◽  
Hot Wire ◽  
X Ray Diffraction ◽  
X Ray ◽  
Angle Deviation ◽  
Medium Range ◽  
Staebler Wronski Effect ◽  
Annealing Experiments

ABSTRACTWe present the results of X-ray diffraction measurements on a series of device quality hot wire (HW) deposited a-Si:H films in which we vary only the substrate temperature of the growing film, which decreases the bonded film H content in a systematic fashion. By increasing the substrate temperature to ∼375°C, where we deposit our low H content (CH) HW films which exhibit a reduced Staebler-Wronski effect, the width of the first peak in the X-ray diffraction pattern narrows noticeably. We interpret this narrowing to be the first indication of improved medium range ordering in our low CH, device quality HW a-Si:H. We note in addition that measurements of the bond angle deviation, obtained from Raman measurements of the half width of the Si-Si TO phonon mode on the same samples, do not show this same evidence of improved ordering as the substrate temperature is increased. We discuss these differences in the context of sample annealing experiments designed to effuse H from the region of the sample probed by the surface sensitive Raman technique, while leaving the bulk of the material, which is sampled by the X-ray beam, largely unaffected.

Films and Devices Deposited by Hwcvd at Ultra High Deposition Rates

2001 ◽  
Vol 664 ◽  
Author(s):  
A. H. Mahan ◽  
Y. Xu ◽  
E. Iwaniczko ◽  
D. L. Williamson ◽  
W. Beyer ◽  
...  
Keyword(s):  
Defect Density ◽  
State Of The Art ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Hot Wire ◽  
X Ray Diffraction ◽  
X Ray ◽  
X Ray Scattering ◽  
Film Deposition Rate ◽  
Staebler Wronski Effect

ABSTRACTThe structure of a-Si:H, deposited at rates in excess of 100Å/s by the hot wire chemical vapor deposition (HWCVD) technique, has been examined by x-ray diffraction (XRD), Raman spectroscopy, H evolution, and small-angle x-ray scattering (SAXS). As the film deposition rate (Rd) is increased, we find that the XRD, Raman and the H evolution peak curves are invariant with Rd, and exhibit structure consistent with state-of-the-art, compact a-Si:H films deposited at low Rd. The only exception is the SAXS signal, which increases by a factor of ∼100 over that for our best low Rd films. We relate changes in the film electronic structure (Urbach edge) to the increase in the SAXS signals. We also note the invariance of the saturated defect density versus Rd, and discuss possible reasons why the increase in the SAXS does not play a role in the Staebler-Wronski Effect for this type of material. Finally, device results are presented.

scholarly journals X-ray and Neutron Study on the Structure of Hydrous SiO2 Glass up to 10 GPa

Minerals ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 84 ◽  
Author(s):  
Satoru Urakawa ◽  
Toru Inoue ◽  
Takanori Hattori ◽  
Asami Sano-Furukawa ◽  
Shinji Kohara ◽  
...  
Keyword(s):  
Oxide Glasses ◽  
Void Space ◽  
X Ray Diffraction ◽  
Amorphous Sio2 ◽  
Sio2 Glass ◽  
X Ray ◽  
X Ray Scattering ◽  
Medium Range ◽  
Two Phases ◽  
A Minor

The structure of hydrous amorphous SiO2 is fundamental in order to investigate the effects of water on the physicochemical properties of oxide glasses and magma. The hydrous SiO2 glass with 13 wt.% D2O was synthesized under high-pressure and high-temperature conditions and its structure was investigated by small angle X-ray scattering, X-ray diffraction, and neutron diffraction experiments at pressures of up to 10 GPa and room temperature. This hydrous glass is separated into two phases: a major phase rich in SiO2 and a minor phase rich in D2O molecules distributed as small domains with dimensions of less than 100 Å. Medium-range order of the hydrous glass shrinks compared to the anhydrous SiO2 glass by disruption of SiO4 linkage due to the formation of Si–OD deuterioxyl, while the response of its structure to pressure is almost the same as that of the anhydrous SiO2 glass. Most of D2O molecules are in the small domains and hardly penetrate into the void space in the ring consisting of SiO4 tetrahedra.

Substrate Temperature and La0.9Sr0.1Ga0.8Mg0.2O3-δ Electrolyte Film Growth by Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 833 ◽  
pp. 127-133
Author(s):  
Jie Yu ◽  
Jie Xing ◽  
Xiu Hua Chen ◽  
Wen Hui Ma ◽  
Rui Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Radio Frequency ◽  
Film Growth ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrolyte Film ◽  
Porous Anode

La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM) electrolyte thin films were fabricated on La0.7Sr0.3Cr0.5Mn0.5O2.75 (LSCM) porous anode substrates by Radio Frequency (RF) magnetron sputtering method. The compatibility between LSGM and LSCM was examined. Microstructures of LSGM thin films fabricated were observed by scanning electron microscope (SEM). The effect of substrate temperature on LSGM thin films was clarified by X-ray Diffraction (XRD). Deposition rate increases firstly at the range of 50°C~150°C, and then decreases at the range of 150°C ~300°C. After annealing, perovskite structure with the same growth orientation forms at different substrate temperature. Crystallite size decreases at first, to the minimum point at 150°C, then increases as substrate temperature rises.

Effect of Substrate Temperature on the Electrochromic Properties of Cobalt Hydroxide Thin Films Prepared by Reactive Sputtering

2011 ◽  
Vol 1328 ◽  
Author(s):  
KyoungMoo Lee ◽  
Yoshio Abe ◽  
Midori Kawamura ◽  
Hidenobu Itoh
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Indium Tin Oxide ◽  
Large Change ◽  
Amorphous Structure ◽  
Cobalt Hydroxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Substrate Temperatures

ABSTRACTCobalt hydroxide thin films with a thickness of 100 nm were deposited onto glass, Si and indium tin oxide (ITO)-coated glass substrates by reactively sputtering a Co target in H2O gas. The substrate temperature was varied from -20 to +200°C. The EC performance of the films was investigated in 0.1 M KOH aqueous solution. X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy of the samples indicated that Co3O4 films were formed at substrate temperatures above 100°C, and amorphous CoOOH films were deposited in the range from 10 to -20°C. A large change in transmittance of approximately 26% and high EC coloration efficiency of 47 cm2/C were obtained at a wavelength of 600 nm for the CoOOH thin film deposited at -20°C. The good EC performance of the CoOOH films is attributed to the low film density and amorphous structure.

Stress in Hydrogenated Microcrystalline Silicon Thin Films

1999 ◽  
Vol 557 ◽  
Author(s):  
D. Peiró ◽  
C. Voz ◽  
J. Bertomeu ◽  
J. Andreu ◽  
E. Martínez ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Vapor Deposition ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Hot Wire ◽  
X Ray Diffraction ◽  
Microcrystalline Silicon ◽  
X Ray ◽  
Silicon Thin Films ◽  
Abrupt Changes

AbstractHydrogenated microcrystalline silicon films have been obtained by hot-wire chemical vapor deposition (HWCVD) in a silane and hydrogen mixture at low pressure (<5 × 10-2 mbar). The structure of the samples and the residual stress were characterised by X- ray diffraction (XRD). Raman spectroscopy was used to estimate the volume fraction of the crystalline phase, which is in the range of 86 % to 98%. The stress values range between 150 and -140 MPa. The mechanical properties were studied by nanoindentation. Unlike monocrystalline wafers, there is no evidence of abrupt changes in the force-penetration plot, which have been attributed to a pressure-induced phase transition. The hardness was 12.5 GPa for the best samples, which is close to that obtained for silicon wafers.

Nitrido-und Oxochlorokomplexe des Vanadiums(V); die Kristallstruktur von AsPh4 [V0C14] Nitrido and Oxochloro Complexes of Vanadium(V); the Crystal Structure of AsPh4[VOCl4]

1980 ◽  
Vol 35 (5) ◽  
pp. 522-525 ◽  
Author(s):  
Gisela Beindorf ◽  
Joachim Strähle ◽  
Wolfgang Liebelt ◽  
Kurt Dehnicke
Keyword(s):  
Crystal Structure ◽  
Ir Spectra ◽  
Bond Length ◽  
Bond Angle ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
Linear Arrangement ◽  
Space Group ◽  
X Ray ◽  
Complex Anions

The complexes AsPh4[Cl4V = N-Cl] and AsPh4[VOCl4] are prepared by the reaction of AsPh4Cl with Cl3VNCl and VOCl3, respectively. The IR spectra indicate C4v symmetry for the complex anions with multiple VN and VO bonds and a linear arrangement for the VNCl-group. AsPh4[VOCl4] crystallizes in the tetragonal space group P4/n with two formula units in the unit cell. The crystal structure was solved by X-ray diffraction methods (R = 0,062, 1096 observed, independent reflexions). The structure consists of AsPh4+ cations and [VOCl4]- anions with symmetry C4v. The extremely short VO bond length corresponds with a VO triple; its steric requirements cause the relatively large bond angle OVCl of 103.4°.

scholarly journals X-ray Diffraction Investigation of Stainless Steel—Nitrogen Thin Films Deposited Using Reactive Sputter Deposition

Coatings ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 984
Author(s):  
Faisal I. Alresheedi ◽  
James E. Krzanowski
Keyword(s):  
Thin Films ◽  
Stainless Steel ◽  
Substrate Temperature ◽  
Peak Shift ◽  
304 Stainless Steel ◽  
Tetragonal Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Area Detector ◽  
Calculated Parameter

An X-ray diffraction investigation was carried out on nitrogen-containing 304 stainless steel thin films deposited by reactive rf magnetron sputtering over a range of substrate temperature and bias levels. The resulting films contained between ~28 and 32 at.% nitrogen. X-ray analysis was carried out using both the standard Bragg-Brentano method as well as area-detector diffractometry analysis. The extent of the diffraction anomaly ((002) peak shift) was determined using a calculated parameter, denoted RB, which is based on the (111) and (002) peak positions. The normal value for RB for FCC-based structures is 0.75 but increases as the (002) peak is anomalously displaced closer to the (111) peak. In this study, the RB values for the deposited films were found to increase with substrate bias but decrease with substrate temperature (but still always >0.75). Using area detector diffractometry, we were able to measure d111/d002 values for similarly oriented grains within the films, and using these values calculate c/a ratios based on a tetragonal-structure model. These results allowed prediction of the (002)/(200) peak split for tetragonal structures. Despite predicting a reasonably accessible split (~0.6°–2.9°–2θ), no peak splitting observed, negating the tetragonal-structure hypothesis. Based on the effects of film bias/temperature on RB values, a defect-based hypothesis is more viable as an explanation for the diffraction anomaly.

scholarly journals Formation of Tetranuclear Nickel(II) Complexes with Schiff-Bases: Crystal Structures and Magnetic Properties

Crystals ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 592 ◽  
Author(s):  
Zhonglu You ◽  
Yingying Luo ◽  
Susan Herringer ◽  
Yanmin Li ◽  
Silvio Decurtins ◽  
...  
Keyword(s):  
Bond Angle ◽  
Binding Mode ◽  
Ferromagnetic Behavior ◽  
X Ray Diffraction ◽  
Schiff Base Ligands ◽  
X Ray ◽  
Structural Correlation ◽  
Magnetization Data ◽  
Coupling Parameters ◽  
Nonzero Spin

The cubane-type structure is a typical representative of tetranuclear coordination compounds. In this work, two anionic Schiff-base ligands, (L1)2− and (L2)2−, each offering an O^N^O coordination pocket, ligate four NiII ions into a [Ni4O4] cubane core. The ligands are H2L1 = 2−[[(3-ethoxy-2−hydroxyphenyl) methylene]amino]benzenemethanol and H2L2 = 2−[[(5-fluoro-2−hydroxyphenyl)methylene]amino]benzenemethanol. In both compounds, [Ni4(L1)4(EtOH)4] (1) and [Ni4(L2)4(MeOH)4] (2), alkoxy oxygens of the ligands act in a bridging μ3-O binding mode. Magnetic susceptibility and magnetization data for compounds 1 and 2 are presented. The Ni–O–Ni bond angles of the cubane core determined from single crystal X-ray diffraction data play a key role for a magneto-structural correlation. Dominant intracube ferromagnetic behavior is observed, and the coupling parameters were determined for both compounds, leading to nonzero spin ground states in accordance with the broadly accepted bond angle guideline.

scholarly journals Untersuchungen am System Vanadium—Gallium

1966 ◽  
Vol 21 (5) ◽  
pp. 531-540 ◽  
Author(s):  
R. G. Maier ◽  
Y. Uzel ◽  
H. Kandler
Keyword(s):  
Crystal Structure ◽  
Phase Diagram ◽  
Electron Probe ◽  
Liquidus Curve ◽  
X Ray Diffraction ◽  
Equilibrium Conditions ◽  
Electron Probe Analysis ◽  
X Ray ◽  
Oxygen System ◽  
Annealing Experiments

The phase diagram of the vanadium-gallium system was investigated by means of thermoanalysis, microscopy, x-ray diffraction, and electron probe analysis.The liquidus curve was measured in the range from 40—80% Gallium. The existence of the known phases V3Ga (Cr3Si-typ), V6Ga5 (Ti6Sn5-typ), V6Ga7 (Cu5Zn8-typ), V2Ga5 (Mn2Hg5-typ), V4GaO and V5Ga3Ox (Mn5Si3-typ) was reestablished. The existence of V3GaOx and V5 (Ga, Si)3Ox is stated and their crystal structure investigated.It is shown that the oxygen content of he samples greatly influences the equilibrium conditions of the system. By means of annealing experiments and dilatometric measurements the phase diagram of the vanadium-gallium-oxygen system was investigated in the range of small oxygen contents.

Mechanothermal Synthesis of SrSnO3

2014 ◽  
Vol 69 (3) ◽  
pp. 313-320 ◽  
Author(s):  
Vittorio Berbenni ◽  
Chiara Milanese ◽  
Giovanna Bruni ◽  
Alessandro Girella ◽  
Amedeo Marini
Keyword(s):  
Solid State ◽  
Mass Loss ◽  
Mechanical Activation ◽  
Solid State Reaction ◽  
Thermal Activation ◽  
Dsc Analysis ◽  
X Ray Diffraction ◽  
X Ray ◽  
Annealing Experiments ◽  
Physical Mixtures

The synthesis of strontium metastannate (SrSnO3) has been performed by coupling mechanical activation with thermal activation of SnC2O4-SrCO3 mixtures. The solid-state reaction has been studied by TG-DSC analysis and powder X-ray diffraction. By annealing experiments performed on physical mixtures (no mechanical activation) it has been assessed that the formation of SrSnO3 occurs through the intermediate Sr2SnO4 and is complete only after annealing at 1400 °C. By performing the annealing experiments on activated mixtures it has been established that the formation of SrSnO3 takes place directly at temperatures between 800 and 1000 °C. The SrSnO3 samples obtained at 800 and 900 °C show, by TG analysis, mass loss processes that suggest that SrSnO3 obtained at these temperatures absorbs H2O and CO2 from the air so that its use as gas sensor can be envisaged. This is no longer true for the sample obtained at 1000 °C or above

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