Indentation-induced low-temperature solid-phase crystallization of Si1−xGex (x=0–1) on insulator

2009 ◽  
Vol 94 (19) ◽  
pp. 192106 ◽  
Author(s):  
Kaoru Toko ◽  
Taizoh Sadoh ◽  
Masanobu Miyao
Keyword(s):  
Low Temperature ◽  
Solid Phase ◽  
Solid Phase Crystallization

A 9.5-in. 1.3-Mpixel low-temperature poly-Si TFT-LCD fabricated by solid-phase crystallization of very thin films and an ECR-CVD gate insulator

1993 ◽  
Vol 1 (2) ◽  
pp. 203 ◽  
Author(s):  
Thomas W. Little ◽  
Hideki Koike ◽  
Ken-ichi Takahara ◽  
Takashi Nakazawa ◽  
Hiroyuki Ohshima
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Solid Phase ◽  
Gate Insulator ◽  
Solid Phase Crystallization

WITHDRAWN: Low-temperature solid-phase crystallization of amorphous SiGe films on glass by imprint technique

2007 ◽  
Author(s):  
Kaoru Toko ◽  
Hiroshi Kanno ◽  
Atsushi Kenjo ◽  
Taizoh Sadoh ◽  
Tanemasa Asano ◽  
...  
Keyword(s):  
Low Temperature ◽  
Solid Phase ◽  
Solid Phase Crystallization

Ultra-Low Temperature ( 180 C) Solid-Phase Crystallization of GeSn on Insulator Triggered by Laser-Anneal Seeding

2015 ◽  
Vol 69 (5) ◽  
pp. 301-304
Author(s):  
R. Matsumura ◽  
K. Moto ◽  
Y. Kai ◽  
T. Sadoh ◽  
H. Ikenoue ◽  
...  
Keyword(s):  
Low Temperature ◽  
Solid Phase ◽  
Solid Phase Crystallization ◽  
Laser Anneal

Low-temperature solid-phase-crystallization in Si1−xGex/SiO2

2000 ◽  
Vol 159-160 ◽  
pp. 116-120 ◽  
Author(s):  
S.K Park ◽  
S Yamaguchi ◽  
N Sugii ◽  
K Nakagawa ◽  
M Miyao
Keyword(s):  
Low Temperature ◽  
Solid Phase ◽  
Solid Phase Crystallization

Directional Field Aided Lateral Crystallization of Amorphous Silicon Thin Films

2001 ◽  
Vol 664 ◽  
Author(s):  
Marek A. T. Izmajlowicz ◽  
Neil A. Morrison ◽  
Andrew J. Flewitt ◽  
William I. Milne
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Electric Field ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
Excimer Laser Annealing ◽  
Solid Phase Crystallization ◽  
Metal Induced Crystallization ◽  
Silicon Thin Films ◽  
Induced Crystallization

ABSTRACTFor application to active matrix liquid crystal displays (AMLCDs), a low temperature (< 600 °C) process for the production of polycrystalline silicon is required to permit the use of inexpensive glass substrates. This would allow the integration of drive electronics onto the display panel. Current low temperature processes include excimer laser annealing, which requires expensive equipment, and solid phase crystallization, which requires high temperatures. It is known that by adding small amounts of metals such as nickel to the amorphous silicon the solid phase crystallization temperature can be significantly reduced. The rate of this solid phase metal induced crystallization is increased in the presence of an electric field. Previous work on field aided crystallization has reported crystal growth that either proceeds towards the positive terminal or is independent of the direction of the electric field. In this work, extensive investigation has consistently revealed directional crystallization, from the positive to the negative terminal, of amorphous silicon thin films during heat treatment in the presence of an electric field. This is the first time that this phenomenon has been reported. Models have been proposed for metal induced crystallization with and without an applied electric field in which a reaction between Ni and Si to produce NiSi is the rate-limiting step. The crystallization rate is increased in the presence of an electric field through the drift of positive Ni ions.

scholarly journals Low-temperature (<200 oC) solid-phase crystallization of high substitutional Sn concentration (∼10%) GeSn on insulator enhanced by weak laser irradiation

AIP Advances ◽  
2017 ◽  
Vol 7 (7) ◽  
pp. 075204 ◽  
Author(s):  
Kenta Moto ◽  
Takayuki Sugino ◽  
Ryo Matsumura ◽  
Hiroshi Ikenoue ◽  
Masanobu Miyao ◽  
...  
Keyword(s):  
Low Temperature ◽  
Laser Irradiation ◽  
Solid Phase ◽  
Solid Phase Crystallization

Low Temperature Poly-Si TFTs Using Solid Phase Crystallization (SPC) of Very Thin Films and an ECR-CVD Gate Insulator

1991 ◽  
Author(s):  
Thomas W. LITTLE ◽  
Ken-ichi TAKAHARA ◽  
Hideki KOIKE ◽  
Takashi NAKAZAWA ◽  
Ichio YUDASAKA ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Solid Phase ◽  
Gate Insulator ◽  
Solid Phase Crystallization
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