An Infrared and Luminescence Study of Tritiated Amorphous Silicon

1997 ◽  
Vol 467 ◽  
Author(s):  
L. S. Sidhu ◽  
T. Kosteski ◽  
N. P. Kherani ◽  
F. Gaspari ◽  
S. Zukotynski ◽  
...  
Keyword(s):  
Infrared Spectroscopy ◽  
Amorphous Silicon ◽  
Radiative Recombination ◽  
Inelastic Collisions ◽  
Vibration Modes ◽  
Vibration Frequencies ◽  
Dangling Bonds ◽  
Luminescence Study ◽  
Luminescence Efficiency ◽  
Simple Mass

ABSTRACTTritium, has been incorporated into amorphous silicon. Infrared spectroscopy shows new infrared vibration modes due to silicon-tritium (Si-T) bonds in the amorphous silicon network. Si-T vibration frequencies are related to Si-H vibration frequencies by simple mass relationships. Inelastic collisions of β particles, produced as a result of tritium decay, with the amorphous silicon network results in the generation of electron-hob pairs. Radiative recombination of these carriers is observed. Dangling bonds associated with the tritium decay reduce luminescence efficiency.

Infrared Spectroscopy Characterization of Marine Shells

2001 ◽  
Vol 711 ◽  
Author(s):  
Octavio Gomez-Martinez ◽  
Daniel H. Aguilar ◽  
Patricia Quintana ◽  
Juan J. Alvarado-Gil ◽  
Dalila Aldana ◽  
...  
Keyword(s):  
Fourier Transform ◽  
Infrared Spectroscopy ◽  
Crassostrea Virginica ◽  
Thermal Treatments ◽  
Vibration Modes ◽  
Lattice Vibrations ◽  
Vibration Frequencies ◽  
Mussel Shells ◽  
Carbonate Lattice

ABSTRACTFourier Transform infrared spectroscopy has been employed to study the shells of two kind of mollusks, American oysters (Crassostrea virginica) and mussels (Ischadium recurvum). It is shown that it is possible to distinguish the different calcium carbonate lattice vibrations in each case, mussel shells present aragonite vibration frequencies, and the oyster shells present those corresponding to calcite. The superposition, shift and broadening of the infrared bands are discussed. Changes in the vibration modes due to successive thermal treatments are also reported.

Tritium in Amorphous Silicon

1996 ◽  
Vol 420 ◽  
Author(s):  
L. S. Sidhu ◽  
T. Kosteski ◽  
S. K. O'Leary ◽  
F. Gaspari ◽  
S. Zukotynski ◽  
...  
Keyword(s):  
Infrared Spectrum ◽  
Amorphous Silicon ◽  
Radiative Recombination ◽  
Inelastic Collisions ◽  
Excess Electron ◽  
Electron Hole ◽  
Beta Particles ◽  
Preliminary Results ◽  
Unstable Isotope

AbstractPreliminary results on infrared and luminescence measurements of tritium incorporated amorphous silicon are reported. Tritium is an unstable isotope that readily substitutes hydrogen in the amorphous silicon network. Due to its greater mass, bonded tritium is found to introduce new stretching modes in the infrared spectrum. Inelastic collisions between the beta particles, produced as a result of tritium decay, and the amorphous silicon network, results in the generation of excess electron-hole pairs. Radiative recombination of these carriers is observed.

Metastable Defects in the Amorphous Silicon-Germanium Alloys

2003 ◽  
Vol 762 ◽  
Author(s):  
J. David Cohen
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Dangling Bonds ◽  
Annealing Behavior ◽  
Fundamental Properties ◽  
Silicon Materials ◽  
Salient Features ◽  
The Individual ◽  
Amorphous Silicon Germanium ◽  
Silicon Germanium Alloys

AbstractThis paper first briefly reviews a few of the early studies that established some of the salient features of light-induced degradation in a-Si,Ge:H. In particular, I discuss the fact that both Si and Ge metastable dangling bonds are involved. I then review some of the recent studies carried out by members of my laboratory concerning the details of degradation in the low Ge fraction alloys utilizing the modulated photocurrent method to monitor the individual changes in the Si and Ge deep defects. By relating the metastable creation and annealing behavior of these two types of defects, new insights into the fundamental properties of metastable defects have been obtained for amorphous silicon materials in general. I will conclude with a brief discussion of the microscopic mechanisms that may be responsible.

Characterization of radiative recombination in amorphous silicon by optically detected magnetic resonance: Part I

1982 ◽  
Vol 46 (5) ◽  
pp. 473-500 ◽  
Author(s):  
S. Depinna ◽  
B. C. Cavenett ◽  
I. G. Austin ◽  
T. M. Searle ◽  
M. J. Thompson ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Amorphous Silicon ◽  
Radiative Recombination ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected

scholarly journals Modeling of Beta Conductivity in Tritiated Amorphous Silicon

2000 ◽  
Vol 609 ◽  
Author(s):  
Stefan Costea ◽  
Franco Gaspari ◽  
Tome Kosteski ◽  
Stefan Zukotynski ◽  
Nazir P. Kherani ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Amorphous Silicon ◽  
Silicon Film ◽  
Radioactive Decay ◽  
Dangling Bonds ◽  
Electron Hole ◽  
Beta Particles ◽  
Amorphous Silicon Film ◽  
Recombination Centers

ABSTRACTThe change with time in the electrical conductivity of a hydrogenated-tritiated amorphous silicon film (a-Si:H:T) has been studied. The conductivity decreased with time after deposition. A model is developed to account for the decrease. The radioactive decay of tritium into helium produces energetic beta particles. Each β particle creates over 1500 electron-hole pairs in the film thereby increasing the conductivity of the film. The 3He atoms diffuse away leaving dangling bonds behind. We find that neutral dangling bonds (D0) are responsible for the decrease in conductivity by acting as recombination centers in the material.

Luminescent Amorphous Silicon Layers

1997 ◽  
Vol 486 ◽  
Author(s):  
G. Allan ◽  
C. Delerue ◽  
M. Lannoo
Keyword(s):  
Electronic Structure ◽  
Amorphous Silicon ◽  
Radiative Recombination ◽  
Crystalline Silicon ◽  
Tight Binding ◽  
Blue Shift ◽  
Localized States ◽  
Structure Model ◽  
Radiative Recombination Rate ◽  
Tight Binding Approximation

AbstractThe electronic structure of amorphous silicon layers has been calculated within the empirical tight binding approximation using the Wooten-Winer-Weaire atomic structure model. We predict an important blue shift due to the confinement for layer thickness below 3 nm and we compare with crystalline silicon layers. The radiative recombination rate is enhanced by the disorder and the confinement but remains quite small. The comparison of our results with experimental results shows that the density of defects and localized states in the studied samples must be quite small.

Self-Vibration Characteristics of Plane Gate in Inverted Siphon Project

2012 ◽  
Vol 160 ◽  
pp. 64-68
Author(s):  
Hui Fang Xue ◽  
You Wang
Keyword(s):  
Finite Element ◽  
Large Scale ◽  
Element Model ◽  
Vibration Characteristics ◽  
The Self ◽  
Vibration Modes ◽  
Vibration Frequencies ◽  
Small Opening ◽  
First Order ◽  
Inverted Siphon

Based on the vibration problem of the plane gate in the inverted siphon exit of a large-scale hydraulic project in northern Xinjiang, the software ANSYS is used to build the entity model and finite element model. Considering the influence of fluid-solid coupling, the self-vibration characteristics of the gate in the water and without water are analyzed. The first six self-vibration frequencies and vibration modes of the gate are calculated. The results show that the height of water has a significant impact on the self-vibration frequencies of the plane gate. The first order natural frequency on the condition of small opening is decreased by 28.5%. It shows that the structure of the plane gate must be improved.

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