Tritium in Amorphous Silicon

1996 ◽  
Vol 420 ◽  
Author(s):  
L. S. Sidhu ◽  
T. Kosteski ◽  
S. K. O'Leary ◽  
F. Gaspari ◽  
S. Zukotynski ◽  
...  
Keyword(s):  
Infrared Spectrum ◽  
Amorphous Silicon ◽  
Radiative Recombination ◽  
Inelastic Collisions ◽  
Excess Electron ◽  
Electron Hole ◽  
Beta Particles ◽  
Preliminary Results ◽  
Unstable Isotope

AbstractPreliminary results on infrared and luminescence measurements of tritium incorporated amorphous silicon are reported. Tritium is an unstable isotope that readily substitutes hydrogen in the amorphous silicon network. Due to its greater mass, bonded tritium is found to introduce new stretching modes in the infrared spectrum. Inelastic collisions between the beta particles, produced as a result of tritium decay, and the amorphous silicon network, results in the generation of excess electron-hole pairs. Radiative recombination of these carriers is observed.

scholarly journals Modeling of Beta Conductivity in Tritiated Amorphous Silicon

2000 ◽  
Vol 609 ◽  
Author(s):  
Stefan Costea ◽  
Franco Gaspari ◽  
Tome Kosteski ◽  
Stefan Zukotynski ◽  
Nazir P. Kherani ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Amorphous Silicon ◽  
Silicon Film ◽  
Radioactive Decay ◽  
Dangling Bonds ◽  
Electron Hole ◽  
Beta Particles ◽  
Amorphous Silicon Film ◽  
Recombination Centers

ABSTRACTThe change with time in the electrical conductivity of a hydrogenated-tritiated amorphous silicon film (a-Si:H:T) has been studied. The conductivity decreased with time after deposition. A model is developed to account for the decrease. The radioactive decay of tritium into helium produces energetic beta particles. Each β particle creates over 1500 electron-hole pairs in the film thereby increasing the conductivity of the film. The 3He atoms diffuse away leaving dangling bonds behind. We find that neutral dangling bonds (D0) are responsible for the decrease in conductivity by acting as recombination centers in the material.

An Infrared and Luminescence Study of Tritiated Amorphous Silicon

1997 ◽  
Vol 467 ◽  
Author(s):  
L. S. Sidhu ◽  
T. Kosteski ◽  
N. P. Kherani ◽  
F. Gaspari ◽  
S. Zukotynski ◽  
...  
Keyword(s):  
Infrared Spectroscopy ◽  
Amorphous Silicon ◽  
Radiative Recombination ◽  
Inelastic Collisions ◽  
Vibration Modes ◽  
Vibration Frequencies ◽  
Dangling Bonds ◽  
Luminescence Study ◽  
Luminescence Efficiency ◽  
Simple Mass

ABSTRACTTritium, has been incorporated into amorphous silicon. Infrared spectroscopy shows new infrared vibration modes due to silicon-tritium (Si-T) bonds in the amorphous silicon network. Si-T vibration frequencies are related to Si-H vibration frequencies by simple mass relationships. Inelastic collisions of β particles, produced as a result of tritium decay, with the amorphous silicon network results in the generation of electron-hob pairs. Radiative recombination of these carriers is observed. Dangling bonds associated with the tritium decay reduce luminescence efficiency.

Characterization of radiative recombination in amorphous silicon by optically detected magnetic resonance: Part I

1982 ◽  
Vol 46 (5) ◽  
pp. 473-500 ◽  
Author(s):  
S. Depinna ◽  
B. C. Cavenett ◽  
I. G. Austin ◽  
T. M. Searle ◽  
M. J. Thompson ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Amorphous Silicon ◽  
Radiative Recombination ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected

FIRST RESULTS WITH THE RISING ACTIVE STOPPER

2008 ◽  
Vol 17 (supp01) ◽  
pp. 8-20 ◽  
Author(s):  
P. H. REGAN ◽  
N. ALKHOMASHI ◽  
N. AL-DAHAN ◽  
Zs. PODOLYÁK ◽  
S. B. PIETRI ◽  
...  
Keyword(s):  
Gamma Ray ◽  
Spectroscopic Studies ◽  
Ground State Structure ◽  
Energy Response ◽  
Axially Symmetric ◽  
Beta Particles ◽  
Preliminary Results ◽  
Hartree Fock ◽  
First Results ◽  
Beta Delayed

This paper outlines some of the physics opportunities available with the GSI RISING active stopper and presents preliminary results from an experiment aimed at performing beta-delayed gamma-ray spectroscopic studies in heavy-neutron-rich nuclei produced following the projectile fragmentation of a 1 GeV per nucleon 208 Pb primary beam. The energy response of the silicon active stopping detector for both heavy secondary fragments and beta-particles is demonstrated and preliminary results on the decays of neutron-rich Tantalum ( Ta ) to Tungsten ( W ) isotopes are presented as examples of the potential of this technique to allow new structural studies in hitherto experimentally unreachable heavy, neutron-rich nuclei. The resulting spectral information inferred from excited states in the tungsten daughter nuclei are compared with results from axially symmetric Hartree–Fock calculations of the nuclear shape and suggest a change in ground state structure for the N = 116 isotone 190 W compared to the lighter isotopes of this element.

Luminescent Amorphous Silicon Layers

1997 ◽  
Vol 486 ◽  
Author(s):  
G. Allan ◽  
C. Delerue ◽  
M. Lannoo
Keyword(s):  
Electronic Structure ◽  
Amorphous Silicon ◽  
Radiative Recombination ◽  
Crystalline Silicon ◽  
Tight Binding ◽  
Blue Shift ◽  
Localized States ◽  
Structure Model ◽  
Radiative Recombination Rate ◽  
Tight Binding Approximation

AbstractThe electronic structure of amorphous silicon layers has been calculated within the empirical tight binding approximation using the Wooten-Winer-Weaire atomic structure model. We predict an important blue shift due to the confinement for layer thickness below 3 nm and we compare with crystalline silicon layers. The radiative recombination rate is enhanced by the disorder and the confinement but remains quite small. The comparison of our results with experimental results shows that the density of defects and localized states in the studied samples must be quite small.

Infrared Electroabsorption Spectra in Amorphous Silicon Solar Cells

1999 ◽  
Vol 557 ◽  
Author(s):  
J. H. Lyou ◽  
Eric A. Schiff ◽  
Steven S. Hegedus ◽  
S. Guha ◽  
J. Yang
Keyword(s):  
Solar Cells ◽  
Infrared Spectrum ◽  
Amorphous Silicon ◽  
Optical Transition ◽  
Silicon Solar Cells ◽  
Reverse Bias Voltage ◽  
Dangling Bond ◽  
Applied Bias ◽  
Infrared Band ◽  
Peak Energy

AbstractWe report measurements of the infrared spectrum detected by modulating the reverse-bias voltage across amorphous silicon pin solar cells and Schottky barrier diodes. We find a band with a peak energy of 0.8 eV. The existence of this band has not, to our knowledge, been reported previously. The strength of the infrared band depends linearly upon applied bias, as opposed to the quadratic dependence for interband electroabsorption in amorphous silicon.The band's peak energy agrees fairly well with the known optical transition energies for dangling bond defects, but the linear dependence on bias and the magnitude of the signal are surprising if interpreted using an analogy to interband electroabsorption. A model based on absorption by defects near the n/i interface of the diodes accounts well for the infrared spectrum.

Robust single-mode lasers based on hexagonal CdS microflakes

2020 ◽  
Vol 8 (32) ◽  
pp. 11201-11208
Author(s):  
Yang Mi ◽  
Yaoyao Wu ◽  
Jinchun Shi ◽  
Sheng-Nian Luo
Keyword(s):  
Radiative Recombination ◽  
Single Mode ◽  
Whispering Gallery Mode ◽  
Radiative Recombination Rate ◽  
Electron Hole ◽  
High Quality ◽  
Time Resolved ◽  
Whispering Gallery ◽  
Electron Hole Plasma ◽  
Time Resolved Photoluminescence

We have achieved single-mode whispering-gallery-mode lasing in CdS microflakes with sharp linewidth (∼0.12 nm) and high quality factor (∼4200). Such lasers are superior to previous CdS lasers in these lasing parameters. Through time-resolved photoluminescence measurements, electron–hole plasma recombination is established to be the lasing mechanism. The radiative recombination rate of CdS microflakes is enhanced by a factor of ∼4.7 due to the Purcell effect.

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