Stacking Faults on (001) in Transition-Metal Disilicides with The Cllb Structure

1996 ◽  
Vol 460 ◽  
Author(s):  
K. Ito ◽  
T. Nakamoto ◽  
H. Inui ◽  
M. Yamaguchi
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Displacement Vector ◽  
Stacking Faults ◽  
Repulsive Interaction ◽  
Floating Zone ◽  
Zone Method ◽  
Floating Zone Method ◽  
Transmission Electron ◽  
High Resolution Tem

ABSTRACTStacking faults on (001) in MoSi2 and WSi2 with the Cllb structure have been characterized by transmission electron microscopy (TEM), using their single crystals grown by the floating-zone method. Although WSi2 contains a high density of stacking faults, only several faults are observed in MoSi2. For both crystals, (001) faults are characterized to be of the Frank-type in which two successive (001) Si layers are removed from the lattice, giving rise to a displacement vector parallel to [001]. When the displacement vector of faults is expressed in the form of R=l/n[001], however, their n values are slightly deviated from the exact value of 3, because of dilatation of the lattice in the direction perpendicular to the fault, which is caused by the repulsive interaction between Mo (W) layers above and below the fault. Matching of experimental high-resolution TEM images with calculated ones indicates n values to be 3.12 ± 0.10 and 3.34 ± 0.10 for MoSi2 and WSi2, respectively.

scholarly journals High Resolution Tem Studies of Defects Near Si-SiO2 Interface

1983 ◽  
Vol 31 ◽  
Author(s):  
J. H. Mazur ◽  
J. Washburn
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Stacking Faults ◽  
Boron Doped ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
One Step ◽  
P Type

ABSTRACTSmall defects with habit parallel to {100} and {311} matrix planes were observed using high resolution transmission electron microscopy (HREM) within 100 nm from the Si-Si02 interfaces after one step oxidation in dry O2 at 900°C, 1000°C and 1150°C of Czochralski (CZ) grown [100] p type boron doped, 1.5 − 20 Ω cm Si wafers with concentrations of oxygen1.4 × 10 18cm−3 and carbon 4. − 10. × 10 16 cm−3.The defects were less than 10 nm wide and I nm thick. The {100} and {311} defect are interpreted tentatively as thin silica plateletes and {311} stacking faults respectively. Distribution of defects near the interface was random although their density appeared to be lower for higher oxidation temperatures. It is not yet clear whether the defects were formed during the oxidation treatments or were present near the surfaces of the asreceived wafers.

Analysis of Lattice Defects in an Epitaxial PbTiO3 Thick Film by Transmission Electron Microscopy

2013 ◽  
Vol 566 ◽  
pp. 171-174
Author(s):  
Kenta Aoyagi ◽  
Takanori Kiguchi ◽  
Yoshitaka Ehara ◽  
Hiroshi Funakubo ◽  
Toyohiko J. Konno
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Thick Film ◽  
Strain Relaxation ◽  
Stacking Faults ◽  
Local Strain ◽  
Transmission Electron ◽  
Unit Cells ◽  
High Resolution Tem ◽  
Measured Strain

The microstructure of an epitaxial PbTiO3 thick film was investigated by using transmission electron microscopy (TEM). An analysis of bright-field TEM (BFTEM) images revealed the existence of displacements along the [00 direction of PbTiO3. High-resolution TEM (HRTEM) observation indicated that stacking faults parallel to the (001) plane of PbTiO3 are formed in the thick film. Local strain fields around the stacking faults were quantified by geometric phase analysis of the HRTEM image. The measured strain suggested the presence of a pair of extrinsic and intrinsic stacking faults. The distance between an extrinsic stacking fault and an intrinsic one corresponds to two unit cells along the [00 direction of PbTiO3. The formation of these stacking faults is considered to be associated with the strain relaxation of the film.

scholarly journals Microstructure Characterization of Defects in Cubic Silicon Carbide Using Transmission Electron Microscopy

2013 ◽  
Vol 19 (S5) ◽  
pp. 119-122
Author(s):  
Bralee Chayasombat ◽  
Yusuke Kimata ◽  
Tomoharu Tokunaga ◽  
Kotaro Kuroda ◽  
Katsuhiro Sasaki
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Vapor Deposition ◽  
Displacement Vector ◽  
Stacking Faults ◽  
Chemical Vapor ◽  
Growth Direction ◽  
Transmission Electron ◽  
Cubic Silicon Carbide

AbstractMicrostructures of 3C–SiC grown by chemical vapor deposition (CVD) technique on undulant silicon substrate and a further developed technique called switch-back epitaxy (SBE) were studied using transmission electron microscopy (TEM). In case of the CVD sample, the density of the stacking faults was found to be significantly decreasing along growth direction. Sites of collision of stacking faults were observed using high-resolution transmission electron microscopy. Some of the stacking faults were observed to have disappeared after colliding into each other. The stacking faults were identified to be on the same type of plane and had the same type of displacement vector not only in CVD and SBE but also in the epitaxial layer on the SBE SiC samples.

Dislocations and stacking faults in stainless steel

1957 ◽  
Vol 240 (1223) ◽  
pp. 524-538 ◽  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Stainless Steel ◽  
Grain Boundaries ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Stacking Fault Energy ◽  
Thin Sections ◽  
Partial Dislocations ◽  
Transmission Electron

Further experiments by transmission electron microscopy on thin sections of stainless steel deformed by small amounts have enabled extended dislocations to be observed directly. The arrangement and motion of whole and partial dislocations have been followed in detail. Many of the dislocations are found to have piled up against grain boundaries. Other observations include the formation of wide stacking faults, the interaction of dislocations with twin boundaries, and the formation of dislocations at thin edges of the foils. An estimate is made of the stacking-fault energy from a consideration of the stresses present, and the properties of the dislocations are found to be in agreement with those expected from a metal of low stacking-fault energy.

Structural Characterization of CF-PVT Grown Bulk 3C-SiC

2008 ◽  
Vol 600-603 ◽  
pp. 67-70 ◽  
Author(s):  
Alkyoni Mantzari ◽  
Frédéric Mercier ◽  
Maher Soueidan ◽  
Didier Chaussende ◽  
Gabriel Ferro ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Structural Properties ◽  
Structural Characterization ◽  
Stacking Faults ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Transmission Electron ◽  
Continuous Feed

The aim of the present work is to study the structural properties of 3C-SiC which is grown on (0001) 6H-SiC and on (100) 3C-SiC (Hoya) seeds using the Continuous Feed Physical Vapor Transport (CF-PVT) method. Transmission Electron Microscopy (TEM) observations confirm that the overgrown layer is of the 3C-SiC polytype. In the case of the 6H-SiC substrate, microtwins (MTs), stacking faults (SFs) and dislocations (D) are observed at the substrate-overgrown interface with most of the dislocations annihilating within the first few µm from the interface. In the case of 3C-SiC crystals grown on 3C seeds, repeated SFs are formed locally and also coherent (111) twins of 3C-SiC are frequently observed near the surface. The SF density is reduced at the uppermost part of the grown material.

Study on Nanometer Size Structures in the Cr-Mo Electroplated Layer Using Transmission Electron Microscopy and Positron Lifetime Measurement

2011 ◽  
Vol 675-677 ◽  
pp. 247-250 ◽  
Author(s):  
Yoshio Tanita ◽  
Daiji Matsui ◽  
Hiroshi Fukushima
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Dark Field Image ◽  
Dark Field ◽  
High Density ◽  
Positron Annihilation Lifetime ◽  
Small Crystal ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
Crystal Grains

Micro- and nano-structures of the Cr-Mo electroplated layers were studied mainly by Transmission Electron Microscopy (TEM), High Resolution TEM (HRTEM) and Positron Annihilation Lifetime Spectroscopy (PALS). These electroplated layers which were deposited in Cr-Mo electrolyte containing an organic sulfonic acid, showed surface structures having severe ups and downs of small crystal grains. Both selected area diffraction and dark-field image of TEM confirmed the presence of very small crystal grains of less than 50 nm. These small crystal grains exhibited textured structure when the electrolyte contained an organic sulfonic catalyst. PALS results indicated the presence of high density nano-size voids, and HRTEM analysis confirmed the presence of high density voids of 1 nm to 2 nm in diameter. Size and density of these nano-voids increased with the amount of catalyst in the electrolyte.

Orientation relationship and interfacial structure between Nbsolid solution precipitates and α-Nb5Si3 intermetallics

2009 ◽  
Vol 24 (1) ◽  
pp. 192-197 ◽  
Author(s):  
G.M. Cheng ◽  
Y.X. Tian ◽  
L.L. He
Keyword(s):  
Electron Microscopy ◽  
Solid Solution ◽  
Transmission Electron Microscopy ◽  
Stress Concentration ◽  
High Resolution ◽  
Orientation Relationship ◽  
Interfacial Structure ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
High Resolution Tem

The orientation relationship (OR) and the interfacial structure between Nb solid solution (Nbss) precipitates and α-Nb5Si3 intermetallics have been investigated by transmission electron microscopy (TEM). The OR between Nbss and α-Nb5Si3 was determined by selected-area electron diffraction analyses as (222)Nb//(002)α and . High-resolution TEM images of the Nbss/α-Nb5Si3 interface were presented. Steps existed at the interface that acted as centers of stress concentration and released the distortion of lattices to decrease the interfacial energy. In addition, the interfacial models were proposed based on the observed OR to describe the atomic matching of the interface. The distribution of alloying elements at the Nbss/α-Nb5Si3 interface has also been investigated, and Hf was enriched at the interface to strengthen the grain boundary.

Deformation of Monocrystalline Silicon under Nanoscratching

2008 ◽  
Vol 41-42 ◽  
pp. 15-19 ◽  
Author(s):  
Y.Q. Wu ◽  
Han Huang ◽  
Jin Zou
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Applied Load ◽  
Normal Load ◽  
Stacking Faults ◽  
Monocrystalline Silicon ◽  
Crystalline Region ◽  
Density Of Dislocations ◽  
Transmission Electron ◽  
Amorphous Si

In this work, deformation of monocrystalline silicon (Si) under nanoscratching was investigated using transmission electron microscopy (TEM). The results indicated that no fracture occurred during nanoscratching with loads ranging from 1 to 6 mN. The damaged regions induced by nanoscratching included an amorphous Si region and a damaged crystalline Si region. Detailed TEM analyses revealed that at the lowest load of 1 mN no dislocation was observed in the damaged crystalline region, and only stacking faults were observed at the boundary between the damaged crystalline Si and amorphous Si. Dislocations started to nucleate along (111) planes and penetrated into the bulk Si when the normal load was increased to 2 mN and above. Defects perpendicular to the scratched surface were initiated when the load was greater than 4 mN. The density of dislocations also increased rapidly with the increase of the applied load.

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