scholarly journals High Resolution Tem Studies of Defects Near Si-SiO2 Interface

1983 ◽  
Vol 31 ◽  
Author(s):  
J. H. Mazur ◽  
J. Washburn
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Stacking Faults ◽  
Boron Doped ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
One Step ◽  
P Type

ABSTRACTSmall defects with habit parallel to {100} and {311} matrix planes were observed using high resolution transmission electron microscopy (HREM) within 100 nm from the Si-Si02 interfaces after one step oxidation in dry O2 at 900°C, 1000°C and 1150°C of Czochralski (CZ) grown [100] p type boron doped, 1.5 − 20 Ω cm Si wafers with concentrations of oxygen1.4 × 10 18cm−3 and carbon 4. − 10. × 10 16 cm−3.The defects were less than 10 nm wide and I nm thick. The {100} and {311} defect are interpreted tentatively as thin silica plateletes and {311} stacking faults respectively. Distribution of defects near the interface was random although their density appeared to be lower for higher oxidation temperatures. It is not yet clear whether the defects were formed during the oxidation treatments or were present near the surfaces of the asreceived wafers.

Orientation relationship and interfacial structure between Nbsolid solution precipitates and α-Nb5Si3 intermetallics

2009 ◽  
Vol 24 (1) ◽  
pp. 192-197 ◽  
Author(s):  
G.M. Cheng ◽  
Y.X. Tian ◽  
L.L. He
Keyword(s):  
Electron Microscopy ◽  
Solid Solution ◽  
Transmission Electron Microscopy ◽  
Stress Concentration ◽  
High Resolution ◽  
Orientation Relationship ◽  
Interfacial Structure ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
High Resolution Tem

The orientation relationship (OR) and the interfacial structure between Nb solid solution (Nbss) precipitates and α-Nb5Si3 intermetallics have been investigated by transmission electron microscopy (TEM). The OR between Nbss and α-Nb5Si3 was determined by selected-area electron diffraction analyses as (222)Nb//(002)α and . High-resolution TEM images of the Nbss/α-Nb5Si3 interface were presented. Steps existed at the interface that acted as centers of stress concentration and released the distortion of lattices to decrease the interfacial energy. In addition, the interfacial models were proposed based on the observed OR to describe the atomic matching of the interface. The distribution of alloying elements at the Nbss/α-Nb5Si3 interface has also been investigated, and Hf was enriched at the interface to strengthen the grain boundary.

High Resolution Transmission Electron Microscopy of Proton Implanted Gallium Arsenide

1985 ◽  
Vol 46 ◽  
Author(s):  
D. K. Sadana ◽  
J. M. Zavada ◽  
H. A. Jenkinson ◽  
T. Sands
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Phenomenological Model ◽  
Room Temperature ◽  
Stacking Faults ◽  
High Dose ◽  
Cross Sectional ◽  
Projected Range ◽  
Transmission Electron

AbstractHigh resolution transmission electron microscopy (HRTEM) has been performed on cross-sectional specimens from high dose (1016 cm−2) H+ implanted (100) GaAs (300 keV at room temperature). It was found that annealing at 500°C created small (20-50Å) loops on {111} near the projected range (Rp)(3.2 μm). At 550-600°C, voids surrounded by stacking faults, microtwins and perfect dislocations were observed near the Rp. A phenomenological model explaining the observed results is proposed.

Stacking Faults on (001) in Transition-Metal Disilicides with The Cllb Structure

1996 ◽  
Vol 460 ◽  
Author(s):  
K. Ito ◽  
T. Nakamoto ◽  
H. Inui ◽  
M. Yamaguchi
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Displacement Vector ◽  
Stacking Faults ◽  
Repulsive Interaction ◽  
Floating Zone ◽  
Zone Method ◽  
Floating Zone Method ◽  
Transmission Electron ◽  
High Resolution Tem

ABSTRACTStacking faults on (001) in MoSi2 and WSi2 with the Cllb structure have been characterized by transmission electron microscopy (TEM), using their single crystals grown by the floating-zone method. Although WSi2 contains a high density of stacking faults, only several faults are observed in MoSi2. For both crystals, (001) faults are characterized to be of the Frank-type in which two successive (001) Si layers are removed from the lattice, giving rise to a displacement vector parallel to [001]. When the displacement vector of faults is expressed in the form of R=l/n[001], however, their n values are slightly deviated from the exact value of 3, because of dilatation of the lattice in the direction perpendicular to the fault, which is caused by the repulsive interaction between Mo (W) layers above and below the fault. Matching of experimental high-resolution TEM images with calculated ones indicates n values to be 3.12 ± 0.10 and 3.34 ± 0.10 for MoSi2 and WSi2, respectively.

Observation of Dislocation Cutting Ω Phase and its Strengthening Mechanism in an Al-Cu-Mg-Ag Alloy

1997 ◽  
Vol 3 (2) ◽  
pp. 139-145 ◽  
Author(s):  
Bernard Q. Li ◽  
Franklin E. Wawner
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Strengthening Mechanism ◽  
The Other ◽  
Step Height ◽  
Conventional Transmission Electron Microscopy ◽  
Ω Phase ◽  
Transmission Electron ◽  
High Resolution Tem

Abstract: This investigation presents the interaction of dislocations and semicoherent precipitates (Ω phase) in an Al-Cu-Mg-Ag alloy. The study shows that the semicoherent precipitate is cut by dislocations during deformation. Conventional transmission electron microscopy (TEM) and high resolution TEM (HRTEM) observations demonstrate that shearing of precipitates by dislocations occurs by multiple cutting in the precipitate. The step height caused by cutting on the Ω precipitate is only several atomic layers of the Ω phase. The Ω phase is strengthened after shearing by dislocations. A strengthening mechanism is proposed on the basis of this observation. The strengthening mechanism is not only applicable to the Ω precipitate in Al-Cu-Mg-Ag alloys but also to the other semicoherent precipitates in other alloys.

A Tem Study of Inverse Melting in Nb45Cr55

1995 ◽  
Vol 398 ◽  
Author(s):  
W. Sinkler ◽  
C. Michaelsen ◽  
R. Bormann
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Electron Diffraction ◽  
Grain Boundaries ◽  
Amorphous Phase ◽  
Transmission Electron ◽  
High Resolution Tem

ABSTRACTInverse melting of bcc Nb4sCr55 is investigated using transmission electron microscopy, high-resolution TEM and electron diffraction. It is shown that the transformation to the amorphous phase initiates at the bcc grain boundaries. The transformation results in an increase in incoherence, evidenced by a loss of bend contours. Some anisotropy is found in the amorphous phase produced by inverse melting, which is associated in HRTEM with preferentially oriented but discontinuous and distorted fringes. The results are consistent with the production of an amorphous phase by inverse melting.

High-Resolution TEM Observation of 4H-SiC (0001) Surface Planarized by Catalyst-Referred Etching

2012 ◽  
Vol 717-720 ◽  
pp. 873-876 ◽  
Author(s):  
Bui Van Pho ◽  
Shun Sadakuni ◽  
Takeshi Okamoto ◽  
Ryusuke Sagawa ◽  
Kenta Arima ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Care Process ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
The Relationship

A novel abrasive-free planarization method “called catalyst-referred etching (CARE)” has been invented. After the CARE process, a flat and well-ordered surface is obtained as observed by atomic force microscopy (AFM). To determine the atomic structure at the topmost surface, in this study, CARE-processed surfaces of a standard commercial 2-inch n-type 4H-SiC (0001) wafer cut 8o off-axis toward the [1-100] direction were observed by high-resolution transmission electron microscopy (HRTEM). The HRTEM images showed alternating wide and narrow terraces and a single-bilayer step height. The relationship between the width of the terraces and the 4H-SiC crystal structure has been clarified.

Graphene Growth on C and Si-Face of 4H-SiC – TEM and AFM Studies

2010 ◽  
Vol 645-648 ◽  
pp. 577-580 ◽  
Author(s):  
Jolanta Borysiuk ◽  
Rafał Bożek ◽  
Wlodek Strupiński ◽  
Jacek M. Baranowski
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Graphene Layer ◽  
Graphene Growth ◽  
Graphene Layers ◽  
Prolonged Annealing ◽  
Transmission Electron ◽  
High Resolution Tem

Transmission Electron Microscopy (TEM) investigations of graphene layers synthesized on Si and C-terminated on-axis oriented 4H-SiC are presented. The high-resolution TEM (HRTEM) revealed distinctive distance differences between the first carbon graphene layer and SiC surface for both polarities. The prolonged annealing of SiC with carbon face shows, that in addition to the increase of number of graphene layers, there is also observed splitting between stack of graphene layers and the surface of SiC substrate. In addition, the density of so called “puckers” increases.

Synchrotron X-Ray Topography Analysis of Double Shockley Stacking Faults in 4H-SiC Wafers

2016 ◽  
Vol 858 ◽  
pp. 105-108 ◽  
Author(s):  
Yu Yang ◽  
Jian Qiu Guo ◽  
Ouloide Goue ◽  
Balaji Raghothamachar ◽  
Michael Dudley ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Heat Treatment ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
High Temperatures ◽  
Formation Mechanism ◽  
Stacking Faults ◽  
Generation Process ◽  
X Ray ◽  
Transmission Electron

Synchrotron white beam X-ray topography studies carried out on 4H-SiC wafers characterized by locally varying doping concentrations reveals the presence of overlapping Shockley stacking faults generated from residual surface scratches in regions of higher doping concentrations after the wafers have been subjected to heat treatment. The fault generation process is driven by the fact that in regions of higher doping concentrations, a faulted crystal containing double Shockley faults is more stable than perfect 4H–SiC crystal at the high temperatures (>1000 °C) that the wafers are subject to during heat treatment. We have developed a model for the formation mechanism of the rhombus shaped stacking faults, and experimentally verified it by characterizing the configuration of the bounding partials of the stacking faults on both surfaces. Using high resolution transmission electron microscopy, we have verified that the enclosed stacking fault is a double Shockley type.

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