Fabrication and Dielectric Properties of Phase-Pure Ba2Ti9O20 Microwave Resonators

1996 ◽  
Vol 453 ◽  
Author(s):  
Wen-Yi Lin ◽  
Rosario A. Gerhardt ◽  
Robert F. Speyer ◽  
Wesley S. Hackenberger ◽  
Thomas R. Shrout
Keyword(s):  
Heat Treatment ◽  
Solid Solution ◽  
Thermal Processing ◽  
Substitutional Solid Solution ◽  
Dielectric Constants ◽  
Quality Factors ◽  
Heating Rates ◽  
Temperature Dependent ◽  
Microwave Resonators ◽  
Phase Pure

AbstractThe thermal processing schedules necessary to form phase pure Ba2TigO20, with and without substitutional solid solution were investigated. Undoped compositions formed the compound most easily under rapid (500°C/min) heating rates, where diffusional agglomeration of the. TiO2 batch constituent was minimized. The compound formed most easily with minor (0.82%) substitutions of SnO2 and ZrO2 for TiO2. The solubility of Sn in Ba2Ti9O20 was higher than that of Zr. Extended heat treatment (16 vs. 6 h at 1390°C) resulted in volitalization of grain boundary liquid phase, leading to a more porous and slightly degraded resonators. The effects of dopant concentrations and soak periods at 1390°C on dielectric constants and temperature-dependent quality factors are reported.

Rapid Thermal Processing of Ferroelectric Thin Films

1991 ◽  
Vol 224 ◽  
Author(s):  
Zheng Wu ◽  
Roberto Pascual ◽  
C.V.R. Vasant Kumar ◽  
David Amd ◽  
Michael Sayer
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Thermal Processing ◽  
Crystallization Behavior ◽  
Sol Gel ◽  
Rapid Thermal Processing ◽  
Lead Zirconate ◽  
Dielectric Constants ◽  
Heating Rates ◽  
Pzt Films

AbstractThe preparation of ferroelectric lead zirconate titanate (PZT) thin films by rapid thermal processing (RTP) is reported. The films were deposited by chemical sol gel and physical sputter techniques. The heating rate of RTP was found to have significant influence on the crystallization behavior. Faster heating rates lead to lowering of the crystallization temperature and reduction of grain size. PZT films were obtained with dielectric constants ~ 1000, remanent polarizations between 20 and 30μC/cm2, coercive fields 20 to 60kV/cm, and no significant fatigue for 109 to 1010 stressing cycles.

Transient Enhanced Diffusion in B+ and P+ Implanted Silicon

1986 ◽  
Vol 74 ◽  
Author(s):  
S. J. Pennycook ◽  
R. J. Culbertson
Keyword(s):  
Heat Treatment ◽  
Point Defects ◽  
Diffusion Coefficients ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Temperature Dependent ◽  
Enhanced Diffusion ◽  
Thermally Activated ◽  
Transient Enhanced Diffusion ◽  
And Diffusion

AbstractWe report the transient enhanced diffusion of supersaturated phosphorus in ion-implanted SPE grown Si. Precipitation proceeds rapidly to a metastable SiP phase, which can be converted to an orthorhombic form or redissolved by subsequent heat treatment. The effects are strongly temperature dependent, and consistent with the trapped interstitial model. The behavior of different dopants follows their relative interstitialcy diffusion coefficients. The results suggest that ion implantation induced point defects dominate over thermally activated point defects during low temperature and certain rapid thermal processing, controlling dopant deactivation and diffusion in crystalline or amorphous silicon, and can also affect the SPE growth rate.

Fabrication of undoped near-monophase Ba2Ti9O20 via rapid thermal processing

1999 ◽  
Vol 14 (5) ◽  
pp. 1939-1943 ◽  
Author(s):  
Wen-yi Lin ◽  
Robert F. Speyer
Keyword(s):  
Heat Treatment ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Initial Mixture ◽  
Diffusion Distance ◽  
Phase Pure

Rapid thermal processing of BaTiO3 and TiO2 pressed powders at 500 °C/min to 1250 °C for 2 h in an infrared furnace resulted in a mixture of Ba2Ti9O20, BaTi4O9, and TiO2. Further heat treatment at 1390 °C led to 96 vol% phase-pure Ba2Ti9O20 from an initial mixture devoid of any dopant. Heat treatment at rates decreasing to 5 °C/min facilitated agglomeration of TiO2. This, in turn, increased the diffusion distance required for reaction of BaTi4O9 and TiO2 to form Ba2Ti9O20.

MAGNETIC PROPERTIES, NANOSTRUCTURE AND ORDERING KINETICS OF FePtCu THIN FILMS

2009 ◽  
Vol 23 (06n07) ◽  
pp. 1652-1657 ◽  
Author(s):  
G. J. CHEN ◽  
Y. H. SHIH ◽  
J. S. C. JANG ◽  
S. R. JIAN ◽  
W. C. CHANG ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Activation Energy ◽  
Solid Solution ◽  
Magnetic Properties ◽  
Heating Rates ◽  
Cu Content ◽  
Fept Alloy ◽  
Ordering Kinetics ◽  
Kinetics Of

In this study, the ( FePt )100- x Cu x ( x =0, 4.6, 6.7, 8.8, 10.9) ( FePtCu ) alloy films were prepared by co-sputtering. The effects of Cu addition content and heat treatment on the nanostructure and magnetic properties of the polycrystalline ( FePt )100- x Cu x films are reported. The experimental results show that the ordering temperature of the ( FePt )100- x Cu x ( x =6.7) films reduced to 320°C, which is much lower than that of the FePt alloy. After heat treatment at 600°C for 1 hour, the ( FePt )100- x Cu x ( x =6.7) film shows a coercive force of 15 kOe and the magnetization of 576 emu/cc. The magnetic properties of the FePtCu films can be adjusted by varying the Cu content in the films. The enhancement of the magnetic properties of the FePtCu films mainly resulted from the formation of the order L 10 phase. DSC traces of as-deposited disorder films at different heating rates, to evaluate the crystallization of the order phase, showed that the addition of Cu atoms reduced the activation energy of ordering from 217 kJ/mol to 87 kJ/mol for the ( FePt )100- x Cu x films ( x = 0 and 6.7, respectively). The reduction of the ordering temperature and corresponding activation energy might due to the solid solution of the Cu atoms in the FePt films.

Novel Sol-Gel Synthesis of LiMn2O4 and LiNixCo1-xO2 Powders

2010 ◽  
Vol 63 ◽  
pp. 14-23 ◽  
Author(s):  
Andrzej Deptula ◽  
Wiesława Łada ◽  
Tadeusz Olczak ◽  
Danuta Wawszczak ◽  
Marcin Brykala ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Ascorbic Acid ◽  
Total Pressure ◽  
Sol Gel ◽  
Heating Rates ◽  
Reduced Pressure ◽  
X Ray ◽  
Sol Gel Process ◽  
Phase Pure ◽  
Sol Gel Synthesis

A modified complex sol-gel process was developed to synthesize LiMn2O4 and LiNixCo1-xO2 powders. Sols were prepared from 1.5 M of Mn2+ or 1 M of xNi2+ and (1-x)Co2+ acetates plus ascorbic acid aqueous solutions by alkalizing them with LiOH and NH4OH. Ascorbic acid was added to prevent precipitation in the precursor solutions. When the sols were concentrated to one-third of their initial volume under reduced pressure and then gelled by drying for 10 days, heat treatment to ≥700 °C was accompanied by foaming, violent self-ignition, and formation of carbonates in the Ni-containing species. Significant improvements to the process and resulting powders were gained by modifying the gelation step. When gelation and drying were carried out under reduced total pressure, subsequent heating produced self-ignition, but no foaming, for all heating rates. The resulting products were determined to be nearly phase pure and carbonate free by thermogravimetric, differential thermal, X-ray, and infrared spectroscopy methods.

The Precipitation of Si in AlCuSi Thin Films

1973 ◽  
Vol 31 ◽  
pp. 34-35 ◽  
Author(s):  
R. M. Anderson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Heat Treatment ◽  
Solid Solution ◽  
Integrated Circuit ◽  
Copper Film ◽  
Solution Concentration ◽  
X Ray ◽  
Silicon Thin Films ◽  
Before And After

Aluminum-copper-silicon thin films have been considered as an interconnection metallurgy for integrated circuit applications. Various schemes have been proposed to incorporate small percent-ages of silicon into films that typically contain two to five percent copper. We undertook a study of the total effect of silicon on the aluminum copper film as revealed by transmission electron microscopy, scanning electron microscopy, x-ray diffraction and ion microprobe techniques as a function of the various deposition methods.X-ray investigations noted a change in solid solution concentration as a function of Si content before and after heat-treatment. The amount of solid solution in the Al increased with heat-treatment for films with ≥2% silicon and decreased for films <2% silicon.

High-Temperature Instability of A Cr2Nb-Nb(Cr) Microlaminate Composite

1996 ◽  
Vol 54 ◽  
pp. 374-375
Author(s):  
M. Larsen ◽  
R.G. Rowe ◽  
D.W. Skelly
Keyword(s):  
Heat Treatment ◽  
Solid Solution ◽  
High Temperature ◽  
Elevated Temperatures ◽  
Aircraft Engine ◽  
Lattice Parameter ◽  
Microstructural Stability ◽  
Elevated Temperature Strength ◽  
Cross Sectional ◽  
Bcc Structure

Microlaminate composites consisting of alternating layers of a high temperature intermetallic compound for elevated temperature strength and a ductile refractory metal for toughening may have uses in aircraft engine turbines. Microstructural stability at elevated temperatures is a crucial requirement for these composites. A microlaminate composite consisting of alternating layers of Cr2Nb and Nb(Cr) was produced by vapor phase deposition. The stability of the layers at elevated temperatures was investigated by cross-sectional TEM.The as-deposited composite consists of layers of a Nb(Cr) solid solution with a composition in atomic percent of 91% Nb and 9% Cr. It has a bcc structure with highly elongated grains. Alternating with this Nb(Cr) layer is the Cr2Nb layer. However, this layer has deposited as a fine grain Cr(Nb) solid solution with a metastable bcc structure and a lattice parameter about half way between that of pure Nb and pure Cr. The atomic composition of this layer is 60% Cr and 40% Nb. The interface between the layers in the as-deposited condition appears very flat (figure 1). After a two hour, 1200 °C heat treatment, the metastable Cr(Nb) layer transforms to the Cr2Nb phase with the C15 cubic structure. Grain coarsening occurs in the Nb(Cr) layer and the interface between the layers roughen. The roughening of the interface is a prelude to an instability of the interface at higher heat treatment temperatures with perturbations of the Cr2Nb grains penetrating into the Nb(Cr) layer.

ALTEMP HX

Alloy Digest ◽  
1993 ◽  
Vol 42 (10) ◽  
Keyword(s):  
Heat Treatment ◽  
Solid Solution ◽  
Fracture Toughness ◽  
Corrosion Resistance ◽  
High Temperature ◽  
Base Alloy ◽  
Heat Treating ◽  
Nickel Base Alloy ◽  
Temperature Performance ◽  
Nickel Base

Abstract ALTEMP HX is an austenitic nickel-base alloy designed for outstanding oxidation and strength at high temperatures. The alloy is solid-solution strengthened. Applications include uses in the aerospace, heat treatment and petrochemical markets. This datasheet provides information on composition, physical properties, elasticity, and tensile properties as well as fracture toughness and creep. It also includes information on low and high temperature performance, and corrosion resistance as well as forming, heat treating, and joining. Filing Code: Ni-442. Producer or source: Allegheny Ludlum Corporation.

INCO ALLOY 330

Alloy Digest ◽  
1992 ◽  
Vol 41 (5) ◽  
Keyword(s):  
Heat Treatment ◽  
Solid Solution ◽  
Corrosion Resistance ◽  
High Temperature ◽  
Heat Treating ◽  
High Temperature Alloy ◽  
Nickel Iron ◽  
Temperature Performance ◽  
Inco Alloy ◽  
Iron Chromium

Abstract INCO ALLOY 330 is a nickel/iron/chromium austenitic alloy, not hardenable by heat treatment. It is a solid solution strengthened high-temperature alloy. This datasheet provides information on composition, physical properties, elasticity, and tensile properties as well as creep. It also includes information on high temperature performance and corrosion resistance as well as forming, heat treating, machining, and joining. Filing Code: Ni-403. Producer or source: Inco Alloys International Inc..

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