Low-Temperature Formation of Device-Quality Polysilicon Films by cat-CVD Method

1996 ◽  
Vol 452 ◽  
Author(s):  
Hideki Matsumura ◽  
Akira Heya ◽  
Ritsuko Iizuka ◽  
Akira Izumi ◽  
An-Qiang He ◽  
...  
Keyword(s):  
Thin Film ◽  
Catalytic Cracking ◽  
Polycrystalline Silicon ◽  
Carrier Mobility ◽  
Carrier Transport ◽  
Thin Film Solar Cells ◽  
Cvd Method ◽  
Polysilicon Films ◽  
Si Films ◽  
Deposition Conditions

AbstractPolycrystalline silicon (poly-Si) films are deposited at temperatures lower than 300–400°C by the cat-CVD method. In the method, a SiH4 and H2 gas-mixture is decomposed by catalytic cracking reactions with a heated tungsten catalyzer placed near substrates. Carrier transport, optical and structural properties are investigated for this cat-CVD poly-Si. The films show both large carrier mobility and large optical absorption for particular deposition conditions. The cat-CVD poly-Si films are found to be one of the useful materials for thin film transistors and thin film solar cells.

Carrier Transport in Polycrystalline Silicon Thin Film Solar Cells Grown on a Highly Textured Structure

2004 ◽  
Vol 43 (9A) ◽  
pp. 5955-5959 ◽  
Author(s):  
Shinya Honda ◽  
Hideyuki Takakura ◽  
Yoshihiro Hamakawa ◽  
Riza Muhida ◽  
Tomohiro Kawamura ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Polycrystalline Silicon ◽  
Carrier Transport ◽  
Thin Film Solar Cells ◽  
Silicon Thin Film

Properties of Polysilicon films Oxidized in Inductively Coupled Plasma and its Effect on thin-Film Transistors

1999 ◽  
Vol 558 ◽  
Author(s):  
Yong Woo Choi ◽  
Jin Hyung Ahn ◽  
Byung Tae Ahn
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Inductively Coupled Plasma ◽  
Polycrystalline Silicon ◽  
Gate Oxide ◽  
Hydrogen Incorporation ◽  
Inductively Coupled ◽  
Polysilicon Films ◽  
Si Films ◽  
Si Thin Film

ABSTRACTWe investigated the properties of polycrystalline silicon (poly-Si) films oxidized in inductively coupled plasma (ICP) and the characteristics of poly-Si thin film transistors (TFTs) with an ICP/LPCVD gate oxide. The ICP oxidation reduced the interface traps and passivated dangling bonds by hydrogen incorporation. The ICP oxidation did not change the roughness of the Si/SiO2, while thermal oxidation increased the roughness largely. The characteristics of the TFTs with ICP/LPCVD oxide were improved due to the reduced interface trap density.

Growth of polycrystalline silicon on glass for thin-film solar cells

2010 ◽  
Vol 312 (8) ◽  
pp. 1277-1281 ◽  
Author(s):  
S. Gall ◽  
C. Becker ◽  
K.Y. Lee ◽  
T. Sontheimer ◽  
B. Rech
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Polycrystalline Silicon ◽  
Thin Film Solar Cells

Polycrystalline Silicon for Thin Film Solar Cells

2016 ◽  
pp. 226-232
Author(s):  
Nicolás Budini ◽  
Roberto D. Arce ◽  
Román H. Buitrago ◽  
Javier A. Schmidt
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Polycrystalline Silicon ◽  
Thin Film Solar Cells

A two-dimensional modeling of the fine-grained polycrystalline silicon thin-film solar cells

2002 ◽  
Vol 403-404 ◽  
pp. 258-262 ◽  
Author(s):  
E Christoffel ◽  
M Rusu ◽  
A Zerga ◽  
S Bourdais ◽  
S Noël ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Polycrystalline Silicon ◽  
Thin Film Solar Cells ◽  
Two Dimensional ◽  
Silicon Thin Film ◽  
Fine Grained ◽  
Dimensional Modeling

Chemical speciation at buried interfaces in high-temperature processed polycrystalline silicon thin-film solar cells on ZnO:Al

2013 ◽  
Vol 113 (4) ◽  
pp. 044519 ◽  
Author(s):  
Christiane Becker ◽  
Marcel Pagels ◽  
Carolin Zachäus ◽  
Beatrix Pollakowski ◽  
Burkhard Beckhoff ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
High Temperature ◽  
Polycrystalline Silicon ◽  
Chemical Speciation ◽  
Thin Film Solar Cells ◽  
Silicon Thin Film ◽  
Buried Interfaces
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