Growth and Structure of Microcrystalline Silicon Prepared with Glow Discharge at Various Plasma Excitation Frequencies

1996 ◽  
Vol 452 ◽  
Author(s):  
F. Finger ◽  
R. Carius ◽  
P. Hapke ◽  
L. Houben ◽  
M. Luysberg ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Excitation Frequency ◽  
Interface Layer ◽  
Silicon Substrates ◽  
Microcrystalline Silicon ◽  
Porous Interface ◽  
Hydrogen Mixtures ◽  
Plasma Excitation ◽  
Excitation Frequencies ◽  
Quartz Substrates

AbstractMicrocrystalline silicon was prepared with glow discharge deposition from silane/hydrogen mixtures at plasma excitation frequencies in the range 13.56 MHz - 116 MHz. The influence of the plasma excitation frequency on the growth and the structural properties of the material is investigated. At high excitation frequencies, higher growth and etching rates, larger grain sizes with less disorder within the grains, higher crystalline volume fractions, a reduced amorphous but more porous interface layer on glass and quartz substrates, and faster nucleation on amorphous silicon substrates are obtained. The results are discussed within a schematical growth model.

Preparation of Microcrystalline Silicon with the Layer-by-Layer Technique at Various Plasma Excitation Frequencies

1996 ◽  
Vol 452 ◽  
Author(s):  
P. Hapke ◽  
R. Carius ◽  
F. Finger ◽  
A. Lambertz ◽  
O. Vetterl ◽  
...  
Keyword(s):  
Phase Transformation ◽  
Excitation Frequency ◽  
Hydrogen Treatment ◽  
Layer By Layer ◽  
Microcrystalline Silicon ◽  
Nucleation Layer ◽  
Layer Technique ◽  
Plasma Excitation ◽  
Excitation Frequencies ◽  
Layer By Layer Technique

AbstractFor application as nucleation layer in thin film devices, microcrystalline silicon was deposited with the layer-by-layer technique using plasma excitation frequencies between 27 and 95 MHz, various hydrogen treatment times and various film thicknesses per layer. An optimum phase transformation is found at an intermediate plasma excitation frequency, i.e. at this frequency the shortest hydrogen annealing time is necessary for an effective amorphous-to-crystalline phase transformation.

The Influence of Plasma Excitation Frequency on the Properties of a-SiC:H Produced in a Glow Discharge Plasma

1985 ◽  
Vol 49 ◽  
Author(s):  
W. D. Partlow ◽  
H. Herzig
Keyword(s):  
Glow Discharge ◽  
Discharge Plasma ◽  
Excitation Frequency ◽  
Glow Discharge Plasma ◽  
Film Properties ◽  
Frequency Plasma ◽  
Bulk Plasmon ◽  
Plasma Excitation ◽  
Reflectivity Data ◽  
Ir Bands

We have deposited a-SiC:H thin films from a silane-methane glow discharge plasma in a planar reactor using high (13Mhz and low (12kHz) frequency plasma excitation. Films produced at these two frequencies have significantly different properties as measured by vacuum UV reflectivity measurements, XPS, and infrared spectroscopy. Samples produced at the low excitation frequencies, where higher ion fluxes and energies are expected, have higher VUV reflectivities, higher bulk plasmon energies, and fewer IR bands due to organic fragments. In order to relate the VUV reflectivity data to the material properties, it was fitted to a simple Lorentz model using parameters taken from XPS data. We will discussour interpretation of these data and also the dependence of film properties on the reactant gas composition.

1H Nmr in μc-Si:H Deposited With Different Plasma Excitation Frequencies and Silane Concentrations

1996 ◽  
Vol 420 ◽  
Author(s):  
P. Hari ◽  
P. C. Taylor ◽  
F. Finger
Keyword(s):  
Hydrogen Content ◽  
Excitation Frequency ◽  
Aluminum Foil ◽  
Ir Absorption ◽  
Narrow Component ◽  
Beat Pattern ◽  
Two Samples ◽  
Free Induction ◽  
Plasma Excitation ◽  
Excitation Frequencies

AbstractSix samples of pc-Si:H were prepared by PECVD at 200°C with plasma excitation frequencies ranging from 13 MHz to 95 MHz. Four samples were prepared with gas mixtures of 3% SiH 4 in H2. For these samples the plasma excitation frequencies ranged from 13 MHz to 95 MHz. Two samples at a plasma excitation frequency of 95 MHz were prepared at 5% and 8% SiH4 in H2. All samples were deposited on aluminum foil and etched off using dilute HCI to form powdered samples. These samples were studied by nuclear magnetic resonance (NMR), electron spin resonance (ESR) and infrared (IR) absorption measurements. The broad and narrow components of the free induction decay (FID) in the NMR measurements were compared to the respective components that occur in a-Si:H. The broad components in the various samples of μc-Si:H are similar in width to the broad component in a-Si:H, but the narrow component is narrower by a factor of two as compared to the narrow components in μ-Si:H. The narrow component in pic-Si:H samples exhibits a beat pattern similar to a previously observed Pake doublet. ESR measurements performed between 20 K and 300 K show that the spin densities, which can be attributed to silicon dangling bond states, increase as a function of plasma excitation frequency. The hydrogen content of each μc-Si:H sample was estimated from the NMR measurements, and these estimates are in good arrangement with the hydrogen content estimated from IR measurements.

Role of SiH2 in 1H Nmr of μc-Si:H Deposited with Different Plasma Excitation Frequencies and Silane Concentrations

1996 ◽  
Vol 452 ◽  
Author(s):  
P. Hari ◽  
P. C. Taylor ◽  
F. Finger
Keyword(s):  
Hydrogen Content ◽  
Excitation Frequency ◽  
H Nmr ◽  
Ir Studies ◽  
Wide Range ◽  
Two Samples ◽  
Plasma Excitation ◽  
Excitation Frequencies ◽  
Silane Concentration

AbstractPrevious lH NMR and IR studies of six samples of μc-Si:H prepared under plasma excitation frequencies ranging from 13 MHz to 95 MHz and silane concentrations ranging from 3% to 8% revealed three important results: (1) for a fixed plasma excitation frequency (95 MHz) the hydrogen content increases with silane concentration; (2) for fixed silane concentration the hydrogen content is roughly constant over a wide range of plasma excitation frequencies; and (3) the 1H NMR free induction decay exhibits beat frequencies which correspond to the calculated frequencies due to SiH2 in microcrystalline silicon. In this study we investigate the role of SiH2 in the μc-Si:H structure using 1H NMR measurements. We studied two samples prepared at two different plasma excitation frequencies (13 MHz and 95 MHz). The lU NMR lineshapes of these samples were measured at 300 K and 77 K. The motionally narrowed component of the 1H NMR is not as rapid at room temperature as that observed previously, but the linewidth of this component increases significantly at 77 K. Because of this difference between our results and those reported previously, it is possible that H2 molecules are not responsible for the motional narrowing in our samples. We present plausible arguments for the hindered motion of SiH2 groups in our μc-Si:H samples.

Growth of -Type Microcrystalline Silicon at Different Plasma Excitation Frequencies

1996 ◽  
Vol 51-52 ◽  
pp. 161-166 ◽  
Author(s):  
P. Hapke ◽  
M. Luysberg ◽  
Reinhard Carius ◽  
M. Tzolov ◽  
F. Finger ◽  
...  
Keyword(s):  
Microcrystalline Silicon ◽  
Plasma Excitation ◽  
Excitation Frequencies
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