Roles of Surface Termination in Photoluminescence Mechanisms of Porous Si

1996 ◽  
Vol 452 ◽  
Author(s):  
Y. Suda ◽  
K. Obata ◽  
A. Kumagai ◽  
N. Koshida
Keyword(s):  
Oxidation Process ◽  
Skeletal Structure ◽  
Photoemission Spectroscopy ◽  
Energy Band Gap ◽  
Surface Termination ◽  
Peak Intensity ◽  
Peak Energy ◽  
The Relationship ◽  
Synchrotron Radiation Photoemission ◽  
Nonradiative Centers

AbstractThe relationship between the oxidation states and PL properties and the effects of H/O termination exchange on the PL properties of PS have been investigated using synchrotron radiation photoemission spectroscopy (SR-PES), Auger electron spectroscopy (AES), Fourier transform infrared (FTIR), and photoluminescence (PL) techniques. The energy band gap, the peak energy and FWHM of the PL spectrum are almost unchanged by the oxidation process and by the H/O termination exchange. After the oxidation, the PL peak intensity decreased, suggesting the creation of nonradiative centers. In the H/O termination exchange experiment, the PL peak intensity decreased by more than 65% upon annealing. However, it recovered the initial PL intensity by oxygen exposure. These results suggest that the surface termination itself functions to eliminate the nonradiative centers without depending on the termination species of hydrogen or oxygen, and that the skeletal structure of PS crystallites is important in the PL mechanisms.

STRUCTURE AND THERMAL STABILITY OF THE SULFIDE OVERLAYERS ON CH3CSNH2-PASSIVATED GaAs(100) SURFACES

2001 ◽  
Vol 08 (01n02) ◽  
pp. 19-23 ◽  
Author(s):  
F. Q. XU ◽  
E. D. LU ◽  
H. B. PAN ◽  
C. K. XIE ◽  
P. S. XU ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Electron Spectroscopy ◽  
Photoemission Spectroscopy ◽  
Low Energy Electron Diffraction ◽  
Native Oxides ◽  
Sulfur Passivation ◽  
Different Temperatures ◽  
Low Energy Electron ◽  
Synchrotron Radiation Photoemission ◽  
Thermal Stability Of

Chemically sulfur passivation of GaAs(100) by thioacetamide ( CH 3 CSNH 2) has been studied using synchrotron radiation photoemission spectroscopy (SRPES), Auger electron spectroscopy (AES) and low energy electron diffraction (LEED). The measurement of SRPES and AES showed that the top layer of native oxides over GaAs(100) was removed and the sulfides of Ga and As were formed after the passivation process. The thermal stability and surface structure have also been studied by annealing the passivated samples at different temperatures. We found that the surface sulfides could be removed gradually; as a result, a clean, ordered and thus Fermi level unpinning surface was finally achieved. The surface restructures with GaAs(100)–S(2×1) and 4×1 LEED patterns were observed on annealing above 260°C and at 550°C respectively.

Critical Laser Fluence Observed in (111) Texture, Grain Size and Mobility of Laser Crystallized Amorphous Silicon

1993 ◽  
Vol 297 ◽  
Author(s):  
R.I. Johnson ◽  
G.B. Anderson ◽  
J.B. Boyce ◽  
D.K. Fork ◽  
P. Mei ◽  
...  
Keyword(s):  
Grain Size ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Amorphous Silicon ◽  
Laser Fluence ◽  
Laser Energy ◽  
X Ray ◽  
Peak Intensity ◽  
Silicon Materials ◽  
The Relationship

This paper describes new results on the relationship between the grain size, mobility, and Si (111) x-ray peak intensity of laser crystallized amorphous silicon as a function of the laser fluence, shot density, substrate temperature, and film thickness. These observations include an unexpected narrow peak found in the silicon (111) x- ray peak intensity, which occurs at a specific laser fluence for a given film thickness and substrate temperature. Amorphous silicon materials processed at laser energy densities defined by this peak exhibit exceptionally large grain sizes and electron mobilities that cannot be obtained at any other energy and shot density combination above or below the energy at which the Si (111) x-ray peak intensity maximum occurs.

Characterization of air-exposure/activation cycles of porous Ti–Zr–V getter film using synchrotron radiation photoemission spectroscopy

2009 ◽  
Vol 517 (13) ◽  
pp. 3672-3676 ◽  
Author(s):  
Chien-Cheng Li ◽  
Jow-Lay Huang ◽  
Ran-Jin Lin ◽  
Ding-Fwu Lii ◽  
Chia-Hao Chen ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Photoemission Spectroscopy ◽  
Air Exposure ◽  
Porous Ti ◽  
Synchrotron Radiation Photoemission

VALENCE ELECTRONIC STRUCTURE OF OXYGEN-MODIFIED α-Mo2C(0001) SURFACE: ANGLE-RESOLVED PHOTOEMISSION STUDY

2006 ◽  
Vol 13 (02n03) ◽  
pp. 185-190
Author(s):  
M. KATO ◽  
K. OZAWA ◽  
T. SATO ◽  
K. EDAMOTO
Keyword(s):  
Electron Spectroscopy ◽  
Oxygen Adsorption ◽  
Photoemission Spectroscopy ◽  
Metallic State ◽  
Low Energy Electron Diffraction ◽  
Angle Resolved Photoemission Spectroscopy ◽  
Peak Intensity ◽  
Low Energy Electron ◽  
Photoemission Study ◽  
Surface Angle

Adsorption of oxygen on α- Mo 2 C (0001) is investigated with Auger electron spectroscopy (AES), low-energy electron diffraction (LEED) and angle-resolved photoemission spectroscopy (ARPES) utilizing synchrotron radiation. It is found that C KLL Auger peak intensity does not change during O 2 exposure, indicating that the depletion of C atoms does not proceed. It is deduced from ARPES and LEED results that adsorbed oxygen atoms from a well-ordered (1 × 1) lattice on the α- Mo 2 C (0001) surface. The ARPES study shows that oxygen adsorption induces a peculiar state around Fermi level (E F ). Off-normal-emission measurements prove that the state is a half-filled metallic state.

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