Growth, Structure and Characterization of Electrodeposited Co/Cu Ultrathin Films and Multilayers

1996 ◽  
Vol 451 ◽  
Author(s):  
Y. Jyoko ◽  
S. Kashiwabara ◽  
Y. Hayashi
Keyword(s):  
Multilayered Structure ◽  
Layer Growth ◽  
Layer By Layer ◽  
Potential Control ◽  
Spacer Layer Thickness ◽  
Ultrathin Layers ◽  
Spacer Layer ◽  
Reflection Electron Microscopy ◽  
Slight Amount

ABSTRACTPreparation of giant magnctorcsistancc Co/Cu multilayers by electrodeposition has been discussed on the basis of a nucleation- growth mechanism and experimental observations. Reflection electron microscopy (REM- RHEED) studies of clectrodcpositcd Co, Cu/Pt(111) ultrathin layers and bilayers have revealed a simultaneous multinuclcar multilayer growth (pseudo layer- by- layer growth). REM- RHEED observations have also suggested the formation of an additional (2×2) superstructure on an epitaxially grown Cu/Co/Pt(111) bilayer surface. “Giant” magnctorcsistancc and oscillatory antifcrramagnetic intcrlaycr coupling have been observed in a (111) textured Co/Cu multilayered nanostructurc, prepared by electrodeposition under potential control in the presence of a very slight amount of CrO3. Such a multilayered structure containing a nominal nonmagnetic Cu spacer layer thickness of 3.2 nm exhibits a large saturation magnctorcsistancc of more than 18% at room temperature.

Characterization of Electrodeposited Cobalt/Platinum(Ill) Ultrathin Films and Multilayers

1995 ◽  
Vol 382 ◽  
Author(s):  
Y. Jyoko ◽  
S. Kashiwabara ◽  
Y. Hayashi
Keyword(s):  
Electron Microscopy ◽  
Ultrathin Films ◽  
Photoelectron Spectroscopy ◽  
Multilayered Structure ◽  
Cross Sectional ◽  
Composition Modulation ◽  
Potential Control ◽  
Transmission Electron ◽  
Reflection Electron Microscopy

ABSTRACTReflection electron microscopy (REM) studies of Co electrodeposition on Pt(111) singlecrystal surfaces under potential control have revealed a heteroepitaxial and simultaneous multinuclear multilayer growth in a range from several up to some ten monolayer coverages at room temperature. This growth process has been dependent upon the crystallization overpotential during electrodeposition. REM observations have also suggested the formation of an ordered CoPt3 alloy at the interface between the Pt/Co ultrathin bilayers grown epitaxially on Pt(111) surfaces. Auger and photoelectron spectroscopy experiments on the Pt/Co/Pt(111) system have confirmed a limited interdiffusion or interfacial alloying below the Pt overlayer leading to an induced magnetic moment on the Pt atoms. The Pt/Co interface exhibits electronic interface states of mainly Pt-5d character. Cross-sectional transmission electron microscopy (TEM) observations have provided the first direct experimental evidence for composition modulation across successive layers in a Pt/Co nanometer-multilayered structure prepared by electrodeposition.

Energetics of AlN Epitaxial Wetting Layers on SiC (0001)

1996 ◽  
Vol 449 ◽  
Author(s):  
R. Di Felice ◽  
J. E. Northrup ◽  
J. Neugebauer
Keyword(s):  
First Principles ◽  
Three Dimensional ◽  
Layer Growth ◽  
Layer By Layer ◽  
Two Dimensional ◽  
Charge Accumulation ◽  
Wetting Layer ◽  
Interface Charge ◽  
Wetting Layers

ABSTRACTWe present a first-principles characterization of the initial stages of formation of AlN films on c-plane SiC substrates. Studying the competition between two-dimensional films and three-dimensional islands as a function of Al and N abundances, we find that a two-dimensional film can wet the surface in N-rich conditions. Ordered layer-by-layer growth can proceed to some extent on this wetting layer, and is improved by the formation of an atomically mixed interface which eliminates interface charge accumulation. Our results indicate that the stable AlN films grow in the (0001) orientation on the Si-terminated SiC(0001) substrate.

A SURFACE X-RAY DIFFRACTION STUDY OF THE GROWTH OF ULTRATHIN LAYERS OF Fe ON Cu(001)

1994 ◽  
Vol 01 (04) ◽  
pp. 631-634 ◽  
Author(s):  
M.A. JAMES ◽  
C. NORRIS ◽  
C.L. NICKLIN ◽  
R.G. VAN SILFHOUT ◽  
P.B. HOWES ◽  
...  
Keyword(s):  
Layer Growth ◽  
Detailed Knowledge ◽  
Exact Nature ◽  
Layer By Layer ◽  
X Ray Diffraction ◽  
Iron Films ◽  
X Ray ◽  
Diffusion Limited ◽  
Ultrathin Layers ◽  
Fcc Phase

Although it is well known that the γ (fcc) phase of Fe can be stabilised on Cu(001) single crystal substrates, there is still considerable disagreement about the exact nature of the growth mode and the structures that evolve with increasing film thickness. A detailed knowledge of the structure and morphology is essential for a complete understanding of the magnetic properties of ultrathin iron films. Surface X-ray diffraction measurements, recorded in real time during deposition of Fe deposition on Cu(001), are presented. At room temperature, well-defined layer-by-layer growth, with no significant agglomeration of iron, was observed. The specular intensity of the X-ray beam varied parabolically with coverage, as predicted by kinematical theory. Intensity oscillations were observed up to 15 Fe monolayers, at which coverage relaxation to the α (bcc) phase was confirmed. At 85 K the growth is diffusion limited.

Development of Nanometrology for Nanoelectronics: Growth and Characterization of Transition Metal Monolayer Films on Silicon

2008 ◽  
Vol 381-382 ◽  
pp. 529-532
Author(s):  
N.I. Plusnin ◽  
W.M. Il'yashenko ◽  
S.A. Kitan ◽  
S.V. Krylov
Keyword(s):  
Transition Metal ◽  
Growth Mechanism ◽  
Surface Relief ◽  
Resistivity Measurement ◽  
Thickness Measurement ◽  
Layer Growth ◽  
Layer By Layer ◽  
Monolayer Films ◽  
Plasmon Peak

The paper presents metrology of the growth and characterization of 3d metal monolayer films on silicon. EELS analysis of plasmon peaks during the layer-by-layer growth of Co films on Si(111) demonstrate that thickness measurement of the monolayer films is possible on base of spectra decomposition with interface and film plasmon peak extracting. Results of the resistivity measurement of Co films on Si(111) with different state of the surface correlate with growth mechanism of the films on AES data. AFM-pictures show replication of step surface relief versus the thickness demonstrating growth of the smooth Fe nanofilm on Si(100).

Ordered Thin Films of Perylenetetracarboxylicdianhydride-bisimide and bis-(N-alkyl)-Quinacridone Dyes

2000 ◽  
Vol 620 ◽  
Author(s):  
Andrew Back ◽  
Dana Alloway ◽  
Derck Schlettwein ◽  
Brook Schilling ◽  
J.-F. Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Alkali Halides ◽  
Layer Growth ◽  
Ex Situ ◽  
Layer By Layer ◽  
Molecular Plane ◽  
Layered Growth ◽  
Tapping Mode Afm

ABSTRACTWe review here the recent characterization of vacuum deposited monolayer and multilayer thin films of two different perylenetetracarboxylic-dianydride-bisimides (Cn-PTCDI; n =4,5), quinacridone, and two new bis-(N-alkyl)-quinacridone dyes (DIQA and DEHQA) on single crystal alkali halides using a combination of in situ luminescence spectroscopies and ex situ tapping mode AFM. Flat lying monolayer structures are indicated for PTCDA on the (100) faces of NaCl, KCl and KBr, for C4-PTCDI on KCl, for C5-PTCDI on both KCl and KBr and for DIQA on both KCl and KBr. Coherent thin films, exhibiting layer-by-layer growth can be achieved for PTCDA on all substrates, for C4-PTCDI on KCl and for DIQA on both KBr and KCl. Both C4-PTCDI and DIQA appear to fulfill the requirements for dyes which exhibit layered growth with the molecular plane inclined at steep angles to the surface normal.

Electrochemical layer by layer growth and characterization of copper sulfur thin films on Ag(111)

2011 ◽  
Vol 58 ◽  
pp. 599-605 ◽  
Author(s):  
M. Innocenti ◽  
I. Bencistà ◽  
S. Bellandi ◽  
C. Bianchini ◽  
F. Di Benedetto ◽  
...  
Keyword(s):  
Thin Films ◽  
Layer Growth ◽  
Layer By Layer

Microstructural characterization of CoPtCr/Cr thin film disks by cross-section TEM and elongated probe micro-diffraction

1991 ◽  
Vol 49 ◽  
pp. 762-763
Author(s):  
M.A. Parker ◽  
K.E. Johnson ◽  
C. Hwang ◽  
A. Bermea
Keyword(s):  
Magnetic Recording ◽  
Electron Probe ◽  
Microstructural Characterization ◽  
Crystallographic Structure ◽  
Recording Media ◽  
Layer By Layer ◽  
Cross Sectional ◽  
New Techniques ◽  
Polished Side

We have reported the dependence of the magnetic and recording properties of CoPtCr recording media on the thickness of the Cr underlayer. It was inferred from XRD data that grain-to-grain epitaxy of the Cr with the CoPtCr was responsible for the interaction observed between these layers. However, no cross-sectional TEM (XTEM) work was performed to confirm this inference. In this paper, we report the application of new techniques for preparing XTEM specimens from actual magnetic recording disks, and for layer-by-layer micro-diffraction with an electron probe elongated parallel to the surface of the deposited structure which elucidate the effect of the crystallographic structure of the Cr on that of the CoPtCr.XTEM specimens were prepared from magnetic recording disks by modifying a technique used to prepare semiconductor specimens. After 3mm disks were prepared per the standard XTEM procedure, these disks were then lapped using a tripod polishing device. A grid with a single 1mmx2mm hole was then glued with M-bond 610 to the polished side of the disk.

Microstructural Characterization of Au-Ge-Ni based ohmic contacts to GaAs/AlGaAs modfet device

1987 ◽  
Vol 45 ◽  
pp. 326-327
Author(s):  
A.K. Rai ◽  
A.K. Petford-Long ◽  
A. Ezis ◽  
D.W. Langer
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Microstructural Characterization ◽  
Almost Everywhere ◽  
Spacer Layer ◽  
Good Contact ◽  
The Relationship ◽  
Lower Contact

Considerable amount of work has been done in studying the relationship between the contact resistance and the microstructure of the Au-Ge-Ni based ohmic contacts to n-GaAs. It has been found that the lower contact resistivity is due to the presence of Ge rich and Au free regions (good contact area) in contact with GaAs. Thus in order to obtain an ohmic contact with lower contact resistance one should obtain a uniformly alloyed region of good contact areas almost everywhere. This can possibly be accomplished by utilizing various alloying schemes. In this work microstructural characterization, employing TEM techniques, of the sequentially deposited Au-Ge-Ni based ohmic contact to the MODFET device is presented.The substrate used in the present work consists of 1 μm thick buffer layer of GaAs grown on a semi-insulating GaAs substrate followed by a 25 Å spacer layer of undoped AlGaAs.

Oblique-incidence Reflectivity Difference (OI-RD) and Leed Studies of Adsorption and Growth of Xe on Nb(110)

2003 ◽  
Vol 780 ◽  
Author(s):  
P. Thomas ◽  
E. Nabighian ◽  
M.C. Bartelt ◽  
C.Y. Fong ◽  
X.D. Zhu
Keyword(s):  
Transition Layer ◽  
Layer Growth ◽  
Flow Mode ◽  
Layer By Layer ◽  
Zeroth Order ◽  
Step Flow ◽  
Low Energy Electron Diffraction ◽  
Oriented Film ◽  
Low Energy Electron

AbstractWe studied adsorption, growth and desorption of Xe on Nb(110) using an in-situ obliqueincidence reflectivity difference (OI-RD) technique and low energy electron diffraction (LEED) from 32 K to 100 K. The results show that Xe grows a (111)-oriented film after a transition layer is formed on Nb(110). The transition layer consists of three layers. The first two layers are disordered with Xe-Xe separation significantly larger than the bulk value. The third monolayer forms a close packed (111) structure on top of the tensile-strained double layer and serves as a template for subsequent homoepitaxy. The adsorption of the first and the second layers are zeroth order with sticking coefficient close to one. Growth of the Xe(111) film on the transition layer proceeds in a step flow mode from 54K to 40K. At 40K, an incomplete layer-by-layer growth is observed while below 35K the growth proceeds in a multilayer mode.

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