Preparation of AlAsSb and Mid-Infrared (3–5μm) Lasers By Metal-Organic Chemical Vapor Deposition

1996 ◽  
Vol 450 ◽  
Author(s):  
A. A. Allerman ◽  
R. M. Biefeld ◽  
S. R. Kurtz
Keyword(s):  
Chemical Vapor Deposition ◽  
Active Region ◽  
Vapor Deposition ◽  
Chemical Sensor ◽  
Chemical Vapor ◽  
Emission Wavelength ◽  
Organic Chemical ◽  
Mid Infrared ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTMid-infrared (3–5 μm) infrared lasers and LEDs are being developed for use in chemical sensor systems. As-rich, InAsSb heterostructures display unique electronic properties that are beneficial to the performance of these midwave infrared emitters. We have grown AlAs1−xSbx epitaxial layers by metal-organic chemical vapor deposition using trimethylamine (TMAA) or ethyldimethylamine alane (EDMAA), triethylantimony (TESb) and arsine. We examined the growth of AlAsl−xSbx using temperatures of 500 to 600 °C, pressures of 70 to 630 torr, V/III ratios of 1–27, and growth rates of 0.3 to 2.7 μm/hour in a horizontal quartz reactor. The semi-metal properties of a p-GaAsSb/n-InAs heterojunction are utilized as a source for injection of electrons into the active region of lasers. A regrowth technique has been used to fabricate gain-guided lasers using AlAs1−xSbx for optical confinement with either a strained InAsSb/InAs multi-quantum well (MQW) or an InAsSb/InAsP strained layer superlattice (SLS) as the active region. Under pulsed injection, the InAsSb/InAs MQW laser operated up to 210K with an emission wavelength of 3.8–3.9 μm. Under pulsed optical pumping, the InAsSb/InAsP SLS operated to 240K with an emission wavelength of 3.5–3.7 μm. LED emission has been observed with both active regions in both p-n junction and semi-metal injection structures.

Interdiffused InGaAsP Quantum Dots Lasers on GaAs by Metal Organic Chemical Vapor Deposition

2005 ◽  
Vol 891 ◽  
Author(s):  
Ronald A. Arif ◽  
Nam-Heon Kim ◽  
Luke J. Mawst ◽  
Nelson Tansu
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Emission Wavelength ◽  
Organic Chemical ◽  
Phosphorus Species ◽  
Metal Organic ◽  
Self Assembled ◽  
Organic Chemical Vapor Deposition

ABSTRACTSelf-assembled InGaAs quantum dots (QD) grown by metal organic chemical vapor deposition (MOCVD) have a natural peak emission wavelength around 1150-1200-nm due to its specific composition, shapes, and sizes. In this work, a new method to engineer the emission wavelength capability of MOCVD-grown InGaAs QD on GaAs to ∼1000-nm by utilizing interdiffused InGaAsP QD has been demonstrated. Incorporation of phosphorus species from the GaAsP barriers into the MOCVD-grown self-assembled InGaAs QD is achieved by interdiffusion process. Reasonably low threshold characteristics of ∼ 200-280 A/cm2 have been obtained for interdiffused InGaAsP QD lasers emitting at 1040-nm, which corresponds to blue-shift of ∼ 85-90-nm in comparison to that of unannealed InGaAs QD laser.

scholarly journals The Growth of InAsSb/InAs/InPSb/InAs Mid-Infrared Emitters by Metal-Organic Chemical Vapor Deposition

1999 ◽  
Vol 607 ◽  
Author(s):  
R. M. Biefeld ◽  
J. D. Phillips ◽  
S. R. Kurtz
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Energy Transition ◽  
Low Energy ◽  
Organic Chemical ◽  
Mid Infrared ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Cladding Layers

AbstractWe report on the metal-organic chemical vapor deposition (MOCVD) of strained layer superlattices (SLSs) of InAsSb/InAs/InPSb/InAs as well as mid-infrared optically pumped lasers grown using a high speed rotating disk reactor (RDR). The devices contain AlAsSb cladding layers and strained, type I, InAsSb/InAs/InPSb/InAs strained layer superlattice (SLS) active regions. By changing the layer thickness and composition of the SLS, we have prepared structures with low temperature (<20K) photoluminescence wavelengths ranging from 3.4 to 4.8 µm. The optical properties of the InAsSb/InPSb superlattices revealed an anomalous low energy transition that can be assigned to an antimony-rich, interfacial layer in the superlattice. This low energy transition can be eliminated by introducing a 1.Onm InAs layer between the InAsSb and InPSb layers in the superlattice. An InAsSb/InAs/InPSb/InAs SLS laser was grown on an InAs substrate with AlAs0.16Sb0.844cladding layers. A lasing threshold and spectrally narrowed laser emission were seen from 80 through 250 K, the maximum temperature where lasing occurred. The temperature dependence of the SLS laser threshold is described by a characteristic temperature, T0 = 39 K, from 80 to 200 K.

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