Dependence of the emission wavelength on the internal electric field in quantum-dot laser structures grown by metal–organic chemical-vapor deposition

2001 ◽  
Vol 79 (10) ◽  
pp. 1435-1437 ◽  
Author(s):  
A. Passaseo ◽  
G. Maruccio ◽  
M. De Vittorio ◽  
S. De Rinaldis ◽  
T. Todaro ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Dot ◽  
Electric Field ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Emission Wavelength ◽  
Organic Chemical ◽  
Internal Electric Field ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Effect of the internal electric fields in Quantum Dot laser structures grown by Metal Organic Chemical Vapor Deposition

2002 ◽  
Vol 722 ◽  
Author(s):  
A. Passaseo ◽  
G. Maruccio ◽  
M. De Vittorio ◽  
S. De Rinaldis ◽  
T. Todaro ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Dot ◽  
Electric Field ◽  
Electric Fields ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Gaas Substrates ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractBy means of a systematic study carried out on In0.5Ga0.5As/GaAs quantum dot electroluminescent devices grown by Metal Organic Chemical Vapor Deposition, we show that the combination of internal electric fields in such structures dramatically blue shifts the emission wavelength with respect the photoluminescence emission that occurs at the expected value of 1.3 νm at room temperature. By comparing photoluminescence (PL), electroluminescence (EL) and photocurrent (PC) measurements in In0.5Ga0.5As QD structures emitting between 1.28 νm and 1.4 νm (at 300 K), we demonstrate that the electric field associated to the built-in dipole in the dots, directed from the base of the dots to their apex, and the device junction field (when parallel to the dipole field) lead to the depletion of the ground state. As a consequence, structures grown on n-type GaAs substrates exhibit electroluminescence only from the excited states. Instead, by growing the same device structure on p-type GaAs substrates, i.e. by reversing the direction of the built-in electric field of the device, the effect of the permanent dipole is strongly reduced, thus allowing us to obtain EL emission at the designed wavelength of 1.3 νm at 300 K, coincident to the PL. The consequence on the achievement of efficient lasing in the spectral region of interest for optical transmission. are illustrate.

Interdiffused InGaAsP Quantum Dots Lasers on GaAs by Metal Organic Chemical Vapor Deposition

2005 ◽  
Vol 891 ◽  
Author(s):  
Ronald A. Arif ◽  
Nam-Heon Kim ◽  
Luke J. Mawst ◽  
Nelson Tansu
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Emission Wavelength ◽  
Organic Chemical ◽  
Phosphorus Species ◽  
Metal Organic ◽  
Self Assembled ◽  
Organic Chemical Vapor Deposition

ABSTRACTSelf-assembled InGaAs quantum dots (QD) grown by metal organic chemical vapor deposition (MOCVD) have a natural peak emission wavelength around 1150-1200-nm due to its specific composition, shapes, and sizes. In this work, a new method to engineer the emission wavelength capability of MOCVD-grown InGaAs QD on GaAs to ∼1000-nm by utilizing interdiffused InGaAsP QD has been demonstrated. Incorporation of phosphorus species from the GaAsP barriers into the MOCVD-grown self-assembled InGaAs QD is achieved by interdiffusion process. Reasonably low threshold characteristics of ∼ 200-280 A/cm2 have been obtained for interdiffused InGaAsP QD lasers emitting at 1040-nm, which corresponds to blue-shift of ∼ 85-90-nm in comparison to that of unannealed InGaAs QD laser.

Sign in / Sign up

Export Citation Format

Share Document