IR Sources and Modulators Based on InAs/GaSb/AlSb-Family Quantum Wells

1996 ◽  
Vol 450 ◽  
Author(s):  
J. R. Meyer ◽  
C. L. Felix ◽  
J. I. Malin ◽  
I. Vurgaftman ◽  
C.-H. Lin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Well Lasers ◽  
Type Ii ◽  
Optical Modulators ◽  
Ir Sources ◽  
All Optical ◽  
Interband Cascade Lasers ◽  
Cascade Lasers ◽  
High Output

ABSTRACTWe review recent applications of wavefunction engineering to the design of antimonide quantum heterostructures with favorable properties for infrared devices. Examples include electro-optical and all-optical modulators based on Г-L intervalley transfer, type-II quantum well lasers with enhanced gain per injected carrier, and type-II interband cascade lasers predicted to combine low thresholds and high output powers.

Carrier loss mechanisms in type II quantum wells for the active region of GaSb-based mid-infrared interband cascade lasers

2011 ◽  
Vol 33 (11) ◽  
pp. 1817-1819 ◽  
Author(s):  
G. Sęk ◽  
F. Janiak ◽  
M. Motyka ◽  
K. Ryczko ◽  
J. Misiewicz ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Wells ◽  
Type Ii ◽  
Mid Infrared ◽  
Type Ii Quantum Wells ◽  
Interband Cascade Lasers ◽  
Cascade Lasers ◽  
Loss Mechanisms

High-power and high-efficiency mid-infrared type-II quantum well and interband cascade lasers

1998 ◽  
Author(s):  
Shin Shem Pei ◽  
C.H. T. Lin ◽  
Bao Hua Yang ◽  
Han Q. Le ◽  
Rui Q. Yang ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
High Efficiency ◽  
Type Ii ◽  
Mid Infrared ◽  
Interband Cascade Lasers ◽  
Cascade Lasers

GaAs–AlGaAs multiple-quantum-well lasers for monolithic integration with optical modulators

1991 ◽  
Vol 69 (3-4) ◽  
pp. 491-496 ◽  
Author(s):  
F. Chatenoud ◽  
K. M. Dzurko ◽  
M. Dion ◽  
D. Moss ◽  
R. Barber ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Cavity Length ◽  
Multiple Quantum Well ◽  
Monolithic Integration ◽  
Quantum Well Lasers ◽  
Multiple Quantum ◽  
Optical Modulators ◽  
Single Quantum Well ◽  
Quantum Well Structures

Calculations of multiple-quantum-well laser threshold current show that a common minimum current value exists for each number of wells, at an appropriate cavity length. This optimum cavity length decreases rapidly with increasing number of wells, for instance from about 300 to 110 μm for one to three wells. Granded-index separate-confinement heterostructure (GRINSCH) lasers with 1–10 quantum wells, grown by molecular beam epitaxy, show consistently low threshold currents that agree well with theoretical predictions. Lasing is achieved at 160 A cm−2 and 4.6 mA for broad-area and ridge waveguide single-quantum-well devices, respectively. The field-dependent electroabsorption of these devices when operating as wave-guide modulators indicates good modulation properties for one and three quantum-well structures, with on:off ratios above 55 at lasing wavelength. The behavior becomes more complex with increasing number of wells. This systematic study of discrete multiple-quantum-well lasers and modulators demonstrates that GRINSCH structures with 1–3 wells are the most suitable for monolithic integration. Design rules for the laser cavity are also presented for numbers of wells ranging from 1 to 10.

scholarly journals Towards Interband Cascade lasers on InP Substrate

Materials ◽  
2021 ◽  
Vol 15 (1) ◽  
pp. 60
Author(s):  
Krzysztof Ryczko ◽  
Janusz Andrzejewski ◽  
Grzegorz Sęk
Keyword(s):  
Quantum Wells ◽  
Gas Sensing ◽  
High Gain ◽  
Optical Quality ◽  
Type Ii ◽  
Optical Transitions ◽  
Original Solution ◽  
Inp Substrate ◽  
Interband Cascade Lasers ◽  
Cascade Lasers

In this study, we propose designs of an interband cascade laser (ICL) active region able to emit in the application-relevant mid infrared (MIR) spectral range and to be grown on an InP substrate. This is a long-sought solution as it promises a combination of ICL advantages with mature and cost-effective epitaxial technology of fabricating materials and devices with high structural and optical quality, when compared to standard approaches of growing ICLs on GaSb or InAs substrates. Therefore, we theoretically investigate a family of type II, “W”-shaped quantum wells made of InGaAs/InAs/GaAsSb with different barriers, for a range of compositions assuring the strain levels acceptable from the growth point of view. The calculated band structure within the 8-band k·p approximation showed that the inclusion of a thin InAs layer into such a type II system brings a useful additional tuning knob to tailor the electronic confined states, optical transitions’ energy and their intensity. Eventually, it allows achieving the emission wavelengths from below 3 to at least 4.6 μm, while still keeping reasonably high gain when compared to the state-of-the-art ICLs. We demonstrate a good tunability of both the emission wavelength and the optical transitions’ oscillator strength, which are competitive with other approaches in the MIR. This is an original solution which has not been demonstrated so far experimentally. Such InP-based interband cascade lasers are of crucial application importance, particularly for the optical gas sensing.

scholarly journals Electrical tuning of the oscillator strength in type II InAs/GaInSb quantum wells for active region of passively mode-locked interband cascade lasers

2017 ◽  
Vol 56 (11) ◽  
pp. 110301 ◽  
Author(s):  
Mateusz Dyksik ◽  
Marcin Motyka ◽  
Marcin Kurka ◽  
Krzysztof Ryczko ◽  
Jan Misiewicz ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Wells ◽  
Oscillator Strength ◽  
Type Ii ◽  
Interband Cascade Lasers ◽  
Cascade Lasers

scholarly journals Interface Intermixing in Type II InAs/GaInAsSb Quantum Wells Designed for Active Regions of Mid-Infrared-Emitting Interband Cascade Lasers

2015 ◽  
Vol 10 (1) ◽  
Author(s):  
Marcin Motyka ◽  
Grzegorz Sęk ◽  
Krzysztof Ryczko ◽  
Mateusz Dyksik ◽  
Robert Weih ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Active Regions ◽  
Type Ii ◽  
Mid Infrared ◽  
Interband Cascade Lasers ◽  
Cascade Lasers
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