Spectroscopic Ellipsometry Study of HgCdTe Epilayer Surfaces During Electron Cyclotron Resonance Plasma Etching

1996 ◽  
Vol 450 ◽  
Author(s):  
J. N. Johnson ◽  
J. H. Dinan ◽  
K. M. Singley ◽  
M. Martinka ◽  
B. Johs
Keyword(s):  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Surface Region ◽  
Auger Spectroscopy ◽  
Electron Cyclotron ◽  
Ex Situ ◽  
Process Conditions ◽  
Near Surface

ABSTRACTSpectroscopie ellipsometry has been used to monitor optical characteristics of HgCdTe surfaces during plasma etching in an electron cyclotron resonance reactor. Commonly used process conditions were found to induce changes in the ellipsometric parameters Δ and φ. A model was constructed to account for these changes in terms of process-induced roughness and mercury depleted sub-surface layers An independent characterization of the near-surface region was earned out ex situ after etching using Auger spectroscopy and x-ray photoelectron spectroscopy. Plasma process parameters were varied to isolate their influence on surface conditions and a set of parameters is given for which changes are minimized.

Electron cyclotron resonance plasma etching of InP in CH4/H2/Ar

1990 ◽  
Vol 56 (15) ◽  
pp. 1424-1426 ◽  
Author(s):  
S. J. Pearton ◽  
U. K. Chakrabarti ◽  
A. P. Kinsella ◽  
D. Johnson ◽  
C. Constantine
Keyword(s):  
Plasma Etching ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Electron Cyclotron Resonance Plasma ◽  
Resonance Plasma

Evaluation of Semiconductor Lattice Damage Using a Newly-Developed Photodisplacement Laser Probe

1991 ◽  
Vol 236 ◽  
Author(s):  
S. Sumie ◽  
H. Takamatsu ◽  
H. Tsunaki ◽  
Y. Nishimoto ◽  
Y Nakai
Keyword(s):  
Plasma Etching ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Laser Probe ◽  
Low Level ◽  
Highly Sensitive ◽  
Lattice Damage ◽  
Density Surface ◽  
Resonance Plasma

AbstractA highly sensitive laser probe for photo-acoustic displacement(PAD) has been developed and applied to the monitoring of low-level lattice damage in semiconductors. Since a photodisplacement laser probe with the sensitivity of 0.1 picometers is employed in this measurement, lower density damage for instance, formed by 50 keV B+ implantation with a dose of 5X109 ions/cm2 can be detected. Correlation of the PAD with damage density was obtained in B+ implantation. Therefore, quantitative damage density can be obtained from the relation for lightly damaged layers, such as formed by chemomechanical polishing and by electron cyclotron resonance plasma etching. This technique is useful-for monitoring of low damage density surface.

ICl/Ar electron cyclotron resonance plasma etching of III–V nitrides

1996 ◽  
Vol 69 (10) ◽  
pp. 1426-1428 ◽  
Author(s):  
C. B. Vartuli ◽  
S. J. Pearton ◽  
J. W. Lee ◽  
J. Hong ◽  
J. D. MacKenzie ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Electron Cyclotron Resonance Plasma ◽  
Resonance Plasma
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