Furnace and Rapid Thermal Annealing of P–Implanted Silicon for Solar Cell Fabrication

1985 ◽  
Vol 45 ◽  
Author(s):  
H.B. Harrison ◽  
Y.H. Lee ◽  
A. Pogany ◽  
M.J. Kenny
Keyword(s):  
Light Source ◽  
Void Formation ◽  
Single Crystal Silicon ◽  
Incoherent Light ◽  
Furnace Annealing ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Cell Fabrication ◽  
Isothermal Mode ◽  
Initial Results

ABSTRACTSingle crystal silicon has been implanted with low energy (20 keV) phosphorus ions and a comparison made of furnace annealing (which produces excellent solar cells) and rapid annealing using a radiant incoherent light source. The light source is used to anneal and activate implanted layers in the isothermal mode on a time scale of the order of seconds compared with the much longer furnace annealing times of several hours.Initial results using the incoherent light source show a high dark current and inferior photoresponse. However a subsequent thermal treatment at 600°C for 10–15 minutes shows that the resultant photoresponse can approach that of the longer time furnace anneal. Transmission electron microscopy shows the formation of large voids (20–100 nm) after the initial annealing phase. These reduce in size after furnace annealing. This photoresponse may be related to this void formation.

Pulsed Ion-Beam Induced Reactions of Ni And Co With Amorphous and Single Crystal Silicon

1984 ◽  
Vol 35 ◽  
Author(s):  
J. O. Olowolafe ◽  
R. Fastow
Keyword(s):  
Amorphous Silicon ◽  
Ion Beam ◽  
Single Crystal Silicon ◽  
Reaction Rates ◽  
Rutherford Backscattering ◽  
Thin Layers ◽  
X Ray Diffraction ◽  
Furnace Annealing ◽  
Crystal Silicon ◽  
Transmission Electron

ABSTRACTThin layers (~1,000 A ) of Ni and Co have been reacted with both (100) and amorphous silicon (a-Si) using a pulsed ion beam. Samples were analyzed using Rutherford backscattering, x-ray diffraction, and transmission electron microscopy. Rutherford backscattering showed that the metal/a-Si and metal/(100)-Si reaction rates were comparable. Both reactions began at the composition of the lowest eutectic. For comparison. furnace annealing of the same structures showed that the reaction rate of Ni with amorphous silicon was greater than with (100) Si; Co reacted nearly identically with both substrates. Diffraction data suggest that pulsed ion beam annealing crystallizes the amorphous silicon before the metal/a-Si reaction begins.

TEM characterization of Au/Polysilicon interactions

1990 ◽  
Vol 48 (4) ◽  
pp. 650-651
Author(s):  
N. David Theodore ◽  
Leslie H. Allen ◽  
C. Barry Carter ◽  
James W. Mayer
Keyword(s):  
Solid Phase ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Electrical Contacts ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Polysilicon Films ◽  
The Stability

Metal/polysilicon investigations contribute to an understanding of issues relevant to the stability of electrical contacts in semiconductor devices. These investigations also contribute to an understanding of Si lateral solid-phase epitactic growth. Metals such as Au, Al and Ag form eutectics with Si. reactions in these metal/polysilicon systems lead to the formation of large-grain silicon. Of these systems, the Al/polysilicon system has been most extensively studied. In this study, the behavior upon thermal annealing of Au/polysilicon bilayers is investigated using cross-section transmission electron microscopy (XTEM). The unique feature of this system is that silicon grain-growth occurs at particularly low temperatures ∽300°C).Gold/polysilicon bilayers were fabricated on thermally oxidized single-crystal silicon substrates. Lowpressure chemical vapor deposition (LPCVD) at 620°C was used to obtain 100 to 400 nm polysilicon films. The surface of the polysilicon was cleaned with a buffered hydrofluoric acid solution. Gold was then thermally evaporated onto the samples.

Single Crystal Silicon Carbide On Silicon Using A Supersonic Gas Jet Of Methylsilane

1997 ◽  
Vol 483 ◽  
Author(s):  
S. A. Ustin ◽  
C. Long ◽  
L. Lauhon ◽  
W. Ho
Keyword(s):  
Growth Rate ◽  
Growth Rates ◽  
Single Crystal Silicon ◽  
Maximum Growth ◽  
X Ray Diffraction ◽  
Crystal Silicon ◽  
Cross Sectional ◽  
Supersonic Molecular Beam ◽  
Transmission Electron

AbstractCubic SiC films have been grown on Si(001) and Si(111) substrates at temperatures between 600 °C and 900 °C with a single supersonic molecular beam source. Methylsilane (H3SiCH3) was used as the sole precursor with hydrogen and nitrogen as seeding gases. Optical reflectance was used to monitor in situ growth rate and macroscopic roughness. The growth rate of SiC was found to depend strongly on substrate orientation, methylsilane kinetic energy, and growth temperature. Growth rates were 1.5 to 2 times greater on Si(111) than on Si(001). The maximum growth rates achieved were 0.63 μm/hr on Si(111) and 0.375μm/hr on Si(001). Transmission electron diffraction (TED) and x-ray diffraction (XRD) were used for structural characterization. In-plane azimuthal (ø-) scans show that films on Si(001) have the correct 4-fold symmetry and that films on Si(111) have a 6-fold symmetry. The 6-fold symmetry indicates that stacking has occurred in two different sequences and double positioning boundaries have been formed. The minimum rocking curve width for SiC on Si(001) and Si(111) is 1.2°. Fourier Transform Infrared (FTIR) absorption was performed to discern the chemical bonding. Cross Sectional Transmission Electron Microscopy (XTEM) was used to image the SiC/Si interface.

A study of 2 MeV oxygen implantation to form deeply buried SiO2 layers

1989 ◽  
Vol 4 (5) ◽  
pp. 1227-1232 ◽  
Author(s):  
J. J. Grob ◽  
A. Grob ◽  
P. Thevenin ◽  
P. Siffert ◽  
C. d'Anterroches ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Single Step ◽  
Annealing Process ◽  
Dislocation Network ◽  
Crystal Silicon ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Distribution Moments ◽  
Best Fit

Oxygen ions were implanted into (100) oriented single crystal Si at energies in the range of 0.6 to 2 MeV at normal and oblique (60°) incidences. Oxygen concentration profiles were measured using the 16O(d, α)14N nuclear reaction for 900 keV deuterons. The experimentally measured oxygen distributions were subsequently fitted to the theoretical profiles calculated assuming the Pearson VI distribution. The distribution moments (Rp, ΔRp, ΔR⊥ skewness, and kurtosis) were deduced as the best fit parameters and compared to the computer simulation results (TRIM 87 and PRAL). Whatever the calculation method, the measured Rp and ΔRp values are close to those predicted by the theory. Deeply buried SiO2 layers were formed using a single step implantation and annealing process. A dose of 1.8 × 1018/cm2 of 2 MeV O+ was implanted into the Si substrate maintained at a temperature of 550 °C. The implanted samples were characterized using the Rutherford backscattering (RBS)/channeling technique and cross-sectional transmission electron microscopy (XTEM). The implanted samples were subsequently annealed at 1350 °C for 4 h in an Ar ambient. The annealing process results in creating a continuous SiO2 layer, 0.4 μm thick below a 1.6 μm thick top single crystal silicon overlayer. The buried SiO2 layer contains the well-known faceted Si inclusions. The density of dislocations within the top Si layer remains lower than the XTEM detection limit of 107/cm2. Between the Si overlayer and the buried SiO2 a layer of faceted longitudinal SiO2 precipitates is present. A localized dislocation network links the precipitates to the buried SiO2 layer.

scholarly journals Infrared Light Source Made of Single Crystal Silicon Microbridge

1997 ◽  
Vol 117 (5) ◽  
pp. 239-242 ◽  
Author(s):  
Shiro Karasawa ◽  
Seishiro Ohya ◽  
Hiroyasu Yuasa ◽  
Kenji Akimoto ◽  
Setsuo Kodato
Keyword(s):  
Single Crystal ◽  
Light Source ◽  
Single Crystal Silicon ◽  
Infrared Light ◽  
Crystal Silicon

Epitaxial Silicon on Yttria-Stabilized Cubic Zirconia (YSZ) and Subsequent Oxidation of the Si/YSZ Interface

1984 ◽  
Vol 37 ◽  
Author(s):  
L. M. Mercandalli ◽  
D. Pribat ◽  
M. Dupuy ◽  
C. Arnodo ◽  
D. Rondi ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Single Crystal Silicon ◽  
High Energy ◽  
Silicon Films ◽  
Epitaxial Silicon ◽  
Electrical Measurements ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Microscopy Techniques

Astract(100) single crystal silicon films have been deposited onto (100) oriented Yttria-Stabilized Zirconia (YSZ) substrates by pyrolysis of SiH4 at ∼ 980°C.The as deposited epitaxial silicon films have been characterized by Reflexion High Energy Electron Diffraction and Transmission Electron Microscopy techniques.The as deposited silicon films have also been oxidized by oxygen transport through the substrate, resulting in a Si(100)/ amorphous SiO2/YSZ(100) structure in which the most defective part of the epitaxial silicon deposit has been eliminated. The oxidized interfaces (with SiO2 thicknesses in the 2000 Å range) have then been characterized by Transmission Electron Microscopy in order to assess the improvement in crystalline quality. Electrical measurements have also been performed on MOS-Hall bar structures.

Deposition of Nanocrystalline Tin (IV) Oxide Films on Organic Self-Assembled Monolayers

1999 ◽  
Vol 576 ◽  
Author(s):  
S. Supothina ◽  
M. R. De Guire ◽  
T. P. Niesen ◽  
J. Bill ◽  
F. Aldinger ◽  
...  
Keyword(s):  
Single Crystal Silicon ◽  
Self Assembled Monolayers ◽  
Crystal Silicon ◽  
Deposition Chamber ◽  
Transmission Electron ◽  
Static Solutions ◽  
Assembled Monolayers ◽  
Self Assembled ◽  
Nanocrystalline Thin Films

ABSTRACTNanocrystalline thin films of tin (IV) oxide (cassiterite) have been deposited from aqueous solutions of tin (IV) chloride and hydrochloric acid at 80°C. Substrates were {100} single-crystal silicon wafers, with and without silanol-anchored, sulfonate-terminated organic self-assembled monolayers (SAMs). Using flowing solutions, films with thicknesses of up to 1 μtm have been grown, whereas the thickness of the films from static solutions is limited to about 80 nm. The films were characterized using transmission electron microscopy and Rutherford backscattering spectroscopy. The role of the flow rate and configuration of the deposition chamber is discussed.

Infrared Light Source Made of Heavily Doped Single Crystal Silicon Microbridge

1997 ◽  
Vol 117 (5) ◽  
pp. 275-279
Author(s):  
Hiroyasu Yuasa ◽  
Seishiro Ohya ◽  
Kenji Akimoto ◽  
Shiro Karasawa ◽  
Setsuo Kodato
Keyword(s):  
Single Crystal ◽  
Light Source ◽  
Single Crystal Silicon ◽  
Infrared Light ◽  
Crystal Silicon ◽  
Heavily Doped
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