Dose Measurements on Micro- and Submicrometer Implanted Structures using Thermal-Waves

1985 ◽  
Vol 45 ◽  
Author(s):  
W. Lee Smith ◽  
Robert H. Reuss ◽  
William Clark ◽  
David Rensch
Keyword(s):  
High Resolution ◽  
Thermal Wave ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Measurement Techniques ◽  
Direct Write ◽  
Patterned Wafers ◽  
Wave Measurements ◽  
Dose Measurements ◽  
Focused Beams

ABSTRACTThermal-wave measurement techniques have recently been developed for measuring ion implant dose over the range 1E10 to 1E16 ions/cm2. The spatial resolution obtained with this method is 1 µm, an improvement of approximately 3000X over that of other dose monitors. This resolution capability together with the fact that the thermal-wave measurements are noncontact and nondestructive, permit dose measurements to be made on implanted areas (device features) on patterned wafers, as well as on test wafers.A new potential application of the thermal-wave technique is the measurement of dose implanted by focused ion beam (FIB). Since the FIB technique is a high-resolution, direct-write process and since current FIB systems are limited to scan fields of less than 0.5 mm2, a high-resolution probe to monitor dose and uniformity is necessary.In this paper, we report the measurement of ion dose implanted by focused beams into areas of ‹10−2 mm2. Even single FIB-implanted lines of 0.20 µm width have been detected, and programmed lateral dose variations measured. Experimental results demonstrating the potential of this technique are presented.

Optimizing Gas-Assisted FIB Processes: The Importance of Oft-Ignored Secondary Parameters

2004 ◽  
Author(s):  
C. Rue ◽  
S. Herschbein ◽  
C. Scrudato ◽  
L. Fischer ◽  
A. Shore
Keyword(s):  
Focused Ion Beam ◽  
Vacuum Chamber ◽  
Ion Beam ◽  
Memory Capacity ◽  
Metal Films ◽  
Deposited Metal ◽  
Influence Process ◽  
Focused Beams ◽  
Gas Pressures

Abstract The efficiency of Gas-Assisted Etching (GAE) and depositions performed using the Focused Ion Beam (FIB) technique is subject to numerous factors. Besides the wellknown primary parameters recommended by the FIB manufacturer (pixel spacing, dwell time, and gas pressures), certain secondary factors can also have a pronounced effect on the quality of these gas-assisted FIB operations. The position of the gas delivery nozzle during XeF2 mills on silicon is examined and was found to affect both the milling speed and the texture on the floor of the FIB trench. Limitations arising from the memory capacity of the FIB computer can also influence process times and trench quality. Exposing the FIB vacuum chamber to TMCTS during SiO2 depositions is found to temporarily impede the performance of subsequent tungsten depositions, especially following heavy or prolonged TMCTS exposure. A delay period may be required to achieve optimal tungsten depositions following TMCTS use. Finally, the focusing conditions of the ion beam are found to have a significant impact on the resistance of FIB-deposited metal films. This effect is attributed to partial milling of the deposition film due to the intense current density of the collimated ion beam. The resistances of metal depositions performed with intentionally defocused ion beams were found to be lower than those performed with focused beams.

FIB Enhancement of Mechanically Polished Cross-sections

2019 ◽  
Author(s):  
Becky Holdford
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Cross Sections ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Resolution Imaging ◽  
Chemical Attack ◽  
Resolution Imaging ◽  
Scanning Electron

Abstract On mechanically polished cross-sections, getting a surface adequate for high-resolution imaging is sometimes beyond the analyst’s ability, due to material smearing, chipping, polishing media chemical attack, etc.. A method has been developed to enable the focused ion beam (FIB) to re-face the section block and achieve a surface that can be imaged at high resolution in the scanning electron microscope (SEM).

The Novel Dopant Profile Inspection Methodology by FIB

2010 ◽  
Author(s):  
Po Fu Chou ◽  
Li Ming Lu
Keyword(s):  
High Resolution ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Real Sample ◽  
Physical Analysis ◽  
The Novel ◽  
High Contrast ◽  
Dopant Profile ◽  
P Type

Abstract Dopant profile inspection is one of the focused ion beam (FIB) physical analysis applications. This paper presents a technique for characterizing P-V dopant regions in silicon by using a FIB methodology. This technique builds on published work for backside FIB navigation, in which n-well contrast is observed. The paper demonstrates that the technique can distinguish both n- and p-type dopant regions. The capability for imaging real sample dopant regions on current fabricated devices is also demonstrated. SEM DC and FIB DC are complementary methodologies for the inspection of dopants. The advantage of the SEM DC method is high resolution and the advantage of FIB DC methodology is high contrast, especially evident in a deep N-well region.

scholarly journals Direct-write, focused ion beam-deposited, 7 K superconducting C–Ga–O nanowire

2010 ◽  
Vol 96 (26) ◽  
pp. 262511 ◽  
Author(s):  
Pashupati Dhakal ◽  
G. McMahon ◽  
S. Shepard ◽  
T. Kirkpatrick ◽  
J. I. Oh ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Direct Write

scholarly journals High resolution magnetic force microscopy using focused ion beam modified tips

2002 ◽  
Vol 81 (5) ◽  
pp. 865-867 ◽  
Author(s):  
G. N. Phillips ◽  
M. Siekman ◽  
L. Abelmann ◽  
J. C. Lodder
Keyword(s):  
High Resolution ◽  
Magnetic Force Microscopy ◽  
Magnetic Force ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Force Microscopy

scholarly journals Focused Ion Beam Etching of GaN

1999 ◽  
Vol 4 (S1) ◽  
pp. 769-774 ◽  
Author(s):  
C. Flierl ◽  
I.H. White ◽  
M. Kuball ◽  
P.J. Heard ◽  
G.C. Allen ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Etching Rate ◽  
Side Wall ◽  
Device Fabrication ◽  
Direct Write ◽  
Ion Beam Etching ◽  
Etched Surface ◽  
A Current ◽  
Established Technique

We have investigated the use of focused ion beam (FIB) etching for the fabrication of GaN-based devices. Although work has shown that conventional reactive ion etching (RIE) is in most cases appropriate for the GaN device fabrication, the direct write facility of FIB etching – a well-established technique for optical mask repair and for IC failure analysis and repair – without the requirement for depositing an etch mask is invaluable. A gallium ion beam of about 20nm diameter was used to sputter GaN material. The etching rate depends linearly on the ion dose per area with a slope of 3.5 × 10−4 μm3/pC. At a current of 3nA, for example, this corresponds to an each rate of 1.05 μm3/s. Good etching qualities have been achieved with a side wall roughness significantly below 0.1 μm. Change in the roughness of the etched surface plane stay below 8nm.

Point Defect Clusters and Dislocations in FIB Irradiated Nanocrystalline Aluminum Films: An Electron Tomography and Aberration-Corrected High-Resolution ADF-STEM Study

2011 ◽  
Vol 17 (6) ◽  
pp. 983-990 ◽  
Author(s):  
Hosni Idrissi ◽  
Stuart Turner ◽  
Masatoshi Mitsuhara ◽  
Binjie Wang ◽  
Satoshi Hata ◽  
...  
Keyword(s):  
High Resolution ◽  
Point Defect ◽  
Focused Ion Beam ◽  
Electron Tomography ◽  
Ion Beam ◽  
Dark Field ◽  
Internal Stresses ◽  
Defect Clusters ◽  
Point Defect Clusters ◽  
Aberration Corrected

AbstractFocused ion beam (FIB) induced damage in nanocrystalline Al thin films has been characterized using advanced transmission electron microscopy techniques. Electron tomography was used to analyze the three-dimensional distribution of point defect clusters induced by FIB milling, as well as their interaction with preexisting dislocations generated by internal stresses in the Al films. The atomic structure of interstitial Frank loops induced by irradiation, as well as the core structure of Frank dislocations, has been resolved with aberration-corrected high-resolution annular dark-field scanning TEM. The combination of both techniques constitutes a powerful tool for the study of the intrinsic structural properties of point defect clusters as well as the interaction of these defects with preexisting or deformation dislocations in irradiated bulk or nanostructured materials.

Fabrication of Sub-250nm High Aspect Ratio Apertures by Focused Ion Beam Lithography

2006 ◽  
Vol 983 ◽  
Author(s):  
Todd Simpson ◽  
Ian V Mitchell
Keyword(s):  
Silicon Nitride ◽  
High Resolution ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Gold Films ◽  
Ion Beam Lithography ◽  
Diameter Hole ◽  
Sem Imaging ◽  
Aperture Arrays

AbstractAperture arrays were fabricated in 1.0µm thick gold films supported on 20nm thick silicon nitride membranes. Lithographic milling strategies in gold were evaluated through the use of in-situ sectioning and high resolution SEM imaging with the UWO CrossBeam FIB/SEM. A successful strategy for producing a 250nm diameter hole with sidewalls approaching vertical is summarized.

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