Low-Temperature Deposition and Characterization of AlxIn1-xN Thin Films

1996 ◽  
Vol 449 ◽  
Author(s):  
Guohua Qiu ◽  
J. O. Olowolafe ◽  
Tao Peng ◽  
K. M. Unruh ◽  
C. P. Swann ◽  
...  
Keyword(s):  
Room Temperature ◽  
Chemical Vapor ◽  
Optical Measurements ◽  
Bandgap Energy ◽  
Nitride Semiconductors ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Temperature Deposition

ABSTRACTThin III-V nitride semiconductors fidms are commonly prepared using metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). These methods often require high temperatures (800–1000°C) for the films to grow epitaxially. In the present work, we deposited AlxIn1-xN films on Si substrates by reactive magnetron sputttering method at low substrate temperature. The properties of the films have been studied by RBS, x-ray diffraction, and optical measurements. The AlxIn1-xN films deposited at room temperature were confirmed to be crystalline by x-ray diffraction. Band gap energies of our AlxIn1-xN alloys varies from 1.9 ev to 4.2 ev The bandgap energy vs. lattice constant curve was constructed and confirmed to bow downwards.

LASER-INDUCED SELECTIVE CRYSTALLIZATION OF A-SiGe FILM

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4203-4206 ◽  
Author(s):  
XIYING MA ◽  
XUEKANG CHEN ◽  
GAN WU ◽  
JIANPING YANG ◽  
ZHANGXU LEI
Keyword(s):  
Room Temperature ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Nanometer Materials ◽  
Selective Crystallization ◽  
Treated Sample ◽  
Before And After ◽  
Two Peaks

Laser induced pattern crystallization technique with pulsed KrF excimer (248 nm) laser was used to irradiation amorphous SiGe films prepared by plasma-enhanced chemical vapor deposition (PECVD) on Si substrates. The surface of laser treated sample was investigated by scanning electron microscopy (SEM), it was found that the film irradiated by KrF excimer composed by well-shaped square periodicity embedded in the a-SiGe matrix, and in each square there are laser induced SiGe nanocrystals. The size of SiGe crystals was estimated to be about 10 nm. The samples were analyzed by X-ray diffraction, Raman spectroscopy and photoluminescence analysis before and after crystallization. The Raman spectrum shows strong Ge-Ge, Si-Ge, and Si-Si vibrations that agree with those of crystalline Si 1-x Ge x alloy. Strong PL with two peaks at 720 nm and 750 nm was observed at room temperature in the crystallized film, whereas the uncrystallized sample emits no peaks. These results indicate that nanometer SiGe alloy were formed and laser-induced technology is an efficient technique to produce nanometer materials.

Characterization of Pb(ScTa)1−xTixO3 (x<0.3) Thin Films Grown on LaNiO3 Coated Si by MOCVD

1998 ◽  
Vol 541 ◽  
Author(s):  
C. H. Lin ◽  
H. C. Kuo ◽  
G. E. Stillman ◽  
Haydn Chen
Keyword(s):  
Thin Films ◽  
Electron Microscope ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron ◽  
Metal Organic

AbstractHighly (100) textured pseudo-cubic Pb(ScTa)1−xTixO3 (x=0-0.3) (PSTT) thin films were grown by metal-organic chemical vapor deposition (MOCVD) on LaNiO3 (LNO) electrode buffered Si substrates at 650 °C. The microstructure and chemical uniformity were studied using X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM) and nanoprobe X-ray energy dispersive spectroscopy (EDS). The temperature dependence of dielectric properties and P-E behavior were measured. A shift of Curie temperature of these PST-based thin films due to Ti addition was demonstrated, Furthermore, the pyroelectric properties of these thin films were estimated.

scholarly journals Synthesis, Characteristics and Study the Photoluminscience of the CdSxSe1-x Nanocrystaline Thin Film

2020 ◽  
Vol 17 (1) ◽  
pp. 0116
Author(s):  
Jassim Et al.
Keyword(s):  
Room Temperature ◽  
Structural Characteristics ◽  
Chemical Vapor ◽  
Excitation Wavelength ◽  
X Ray Diffraction ◽  
Characterization Methods ◽  
X Ray ◽  
Chemical Vapor Depostion ◽  
Tunable Emission

 The present work focuses on the changing of the structural characteristics of the grown materials through different material characterization methods. Semiconductor CdSxSe 1-x nano crystallines have been synthesized by chemical vapor depostion. (X- ray Diffraction; XRD), (Field Emission Scanning Electron Microscopy; FESEM), measured the characterization of Semiconductor CdSxSe1-x nano crystallines. The optical properties of semiconductor CdSxSe1-x nanocrystallines have been studied by the photoluminescence (PL) (He-Cd pulsed ultraviolet laser at 325nm excitation wavelength) at room temperature. The results showed the change rule of photoluminsence peak at different S/Se ratios according to the photoluminsence spectral analysis technology. The photuminscence peak can be continuously modulated between (500- 650) nm, so the tunable emission of the materials in the present work have novle applications in the area of bioscience and spectroscopy, etc.

scholarly journals Synthesis and Characterization of Lithium-Ion Conductive LATP-LaPO4 Composites Using La2O3 Nano-Powder

Materials ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3502
Author(s):  
Fangzhou Song ◽  
Masayoshi Uematsu ◽  
Takeshi Yabutsuka ◽  
Takeshi Yao ◽  
Shigeomi Takai
Keyword(s):  
Room Temperature ◽  
Conduction Mechanism ◽  
Lithium Ion ◽  
X Ray Diffraction ◽  
Temperature Conductivity ◽  
Room Temperature Conductivity ◽  
X Ray ◽  
Nano Powder ◽  
Powder Addition

LATP-based composite electrolytes were prepared by sintering the mixtures of LATP precursor and La2O3 nano-powder. Powder X-ray diffraction and scanning electron microscopy suggest that La2O3 can react with LATP during sintering to form fine LaPO4 particles that are dispersed in the LATP matrix. The room temperature conductivity initially increases with La2O3 nano-powder addition showing the maximum of 0.69 mS∙cm−1 at 6 wt.%, above which, conductivity decreases with the introduction of La2O3. The activation energy of conductivity is not largely varied with the La2O3 content, suggesting that the conduction mechanism is essentially preserved despite LaPO4 dispersion. In comparison with the previously reported LATP-LLTO system, although some unidentified impurity slightly reduces the conductivity maximum, the fine dispersion of LaPO4 particles can be achieved in the LATP–La2O3 system.

scholarly journals MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics

2000 ◽  
Vol 5 (S1) ◽  
pp. 412-424
Author(s):  
Jung Han ◽  
Jeffrey J. Figiel ◽  
Gary A. Petersen ◽  
Samuel M. Myers ◽  
Mary H. Crawford ◽  
...  
Keyword(s):  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Optoelectronic Devices ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Peak Energy ◽  
Movpe Growth ◽  
Pl Emission

We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant- PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GaInN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.

scholarly journals Metal-Rich Metallaboranes: Synthesis, Structures and Bonding of Bi- and Trimetallic Open-Faced Cobaltaboranes

Inorganics ◽  
2021 ◽  
Vol 9 (4) ◽  
pp. 28
Author(s):  
Kriti Pathak ◽  
Chandan Nandi ◽  
Jean-François Halet ◽  
Sundargopal Ghosh
Keyword(s):  
Electronic Structures ◽  
Density Functional ◽  
Room Temperature ◽  
Electron Pair ◽  
X Ray Diffraction ◽  
Functional Theory ◽  
X Ray ◽  
Cluster 2 ◽  
Cobalt Center

Synthesis, isolation, and structural characterization of unique metal rich diamagnetic cobaltaborane clusters are reported. They were obtained from reactions of monoborane as well as modified borohydride reagents with cobalt sources. For example, the reaction of [Cp*CoCl]2 with [LiBH4·THF] and subsequent photolysis with excess [BH3·THF] (THF = tetrahydrofuran) at room temperature afforded the 11-vertex tricobaltaborane nido-[(Cp*Co)3B8H10] (1, Cp* = η5-C5Me5). The reaction of Li[BH2S3] with the dicobaltaoctaborane(12) [(Cp*Co)2B6H10] yielded the 10-vertex nido-2,4-[(Cp*Co)2B8H12] cluster (2), extending the library of dicobaltadecaborane(14) analogues. Although cluster 1 adopts a classical 11-vertex-nido-geometry with one cobalt center and four boron atoms forming the open pentagonal face, it disobeys the Polyhedral Skeletal Electron Pair Theory (PSEPT). Compound 2 adopts a perfectly symmetrical 10-vertex-nido framework with a plane of symmetry bisecting the basal boron plane resulting in two {CoB3} units bridged at the base by two boron atoms and possesses the expected electron count. Both compounds were characterized in solution by multinuclear NMR and IR spectroscopies and by mass spectrometry. Single-crystal X-ray diffraction analyses confirmed the structures of the compounds. Additionally, density functional theory (DFT) calculations were performed in order to study and interpret the nature of bonding and electronic structures of these complexes.

Synthesis and Characterization of ZIF-8 Mixed Matrix Membranes

2014 ◽  
Vol 625 ◽  
pp. 661-664
Author(s):  
Chen Chuang Lok ◽  
Yin Fong Yeong
Keyword(s):  
Room Temperature ◽  
Synthesis Method ◽  
Mixed Matrix Membranes ◽  
Inorganic Filler ◽  
X Ray Diffraction ◽  
Mixed Matrix ◽  
Temperature Synthesis ◽  
X Ray ◽  
Matrix Membranes

In the present work, ZIF-8/6FDA-durene mixed matrix membranes (MMMs) were synthesized and characterized. ZIF-8 nanocrystals, which were used as the inorganic filler, were synthesized using rapid room-temperature synthesis method whereas 6FDA-durene polyimide was synthesized by polycondensation method followed by chemical imidization. Pure and 6FDA-durene membranes loaded with 5 wt%, 10 wt% and 15 wt% of ZIF-8 were fabricated. The structural properties and morphology of the resultant membranes were characterized by using X-ray Diffraction (XRD) and Field emission scanning electron microscope (FESEM) . The EDX images showed that ZIF-8 particles agglomerated in the polymer matrix. However, no phase separation was observed for all resultant MMMs.

Growth mechanism and characterization of ZnO nano-tubes synthesized using the hydrothermal-etching method

2009 ◽  
Vol 63 (6) ◽  
Author(s):  
Yan Li ◽  
Chuan-Sheng Liu ◽  
Yun-Ling Zou
Keyword(s):  
Room Temperature ◽  
Morphological Analysis ◽  
Diffraction Field ◽  
X Ray Diffraction ◽  
X Ray ◽  
Room Temperature Photoluminescence ◽  
Etching Method ◽  
Nano Rods ◽  
Two Stages

AbstractZnO nano-tubes (ZNTs) have been successfully synthesized via a simple hydrothermal-etching method, and characterized by X-ray diffraction, field emission scanning electron microscopy and room temperature photoluminescence measurement. The as-synthesized ZNTs have a diameter of 500 nm, wall thickness of 20–30 nm, and length of 5 µm. Intensity of the plane (0002) diffraction peak, compared with that of plane (10$$ \bar 1 $$0) of ZNTs, is obviously lower than that of ZnO nano-rods. This phenomenon can be caused by the smaller cross section of plane (0002) of the nano-tubes compared with that of other morphologies. On basis of the morphological analysis, the formation process of nano-tubes can be proposed in two stages: hydrothermal growth and reaction etching process.

AlxGa1-xN-Based Materials and Heterostructures

1996 ◽  
Vol 449 ◽  
Author(s):  
P. Kung ◽  
A. Saxler ◽  
D. Walker ◽  
X. Zhang ◽  
R. Lavado ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Bragg Reflectors ◽  
X Ray Diffraction ◽  
Chemical Vapor Deposition Growth ◽  
X Ray ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
Dimensional Electron Gas ◽  
P Type

ABSTRACTWe present the metalorganic chemical vapor deposition growth, n-type and p-type doping and characterization of AlxGa1-xN alloys on sapphire substrates. We report the fabrication of Bragg reflectors and the demonstration of two dimensional electron gas structures using AlxGa1-xN high quality films. We report the structural characterization of the AlxGa1-xN / GaN multilayer structures and superlattices through X-ray diffraction and transmission electron microscopy. A density of screw and mixed threading dislocations as low as 107 cm-2 was estimated in AlxGa1-xN / GaN structures. The realization of AlxGa1-xN based UV photodetectors with tailored cut-off wavelengths from 365 to 200 nm are presented.

Synthesis and characterization of MnO2nanowires

2017 ◽  
Vol 31 (02) ◽  
pp. 1750006 ◽  
Author(s):  
Mohammad Hossein Ghorbani ◽  
Abdol Mahmood Davarpanah
Keyword(s):  
Lithium Batteries ◽  
Manganese Oxides ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Average Crystallite Size ◽  
X Ray Diffraction ◽  
X Ray ◽  
Xrd Method

Manganese oxides are of more interest to researchers because of their ability as catalysts and lithium batteries. In this research, MnO2nanowires with diameter about 45 nm were synthesized by sol–gel method at room temperature (RT). Effect of increasing the annealing temperature from 400[Formula: see text]C to 600[Formula: see text]C on crystalline structure of nanostructure were studied and average crystallite size was estimated about 22 nm. X-ray Diffraction (XRD) method, Energy-Dispersive X-ray Diffraction (EDXD), Scanning Electron Microscopy (SEM) and Vibrating Sample Magnetometer (VSM) were used to characterize the nanowires of MnO2.

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