Study of IBAD Deposited AlN Films for Vacuum Diode Electron Emission

1996 ◽  
Vol 449 ◽  
Author(s):  
E.W. Forsythe ◽  
J.A. Sprague ◽  
B.A. Khan ◽  
S. Metha ◽  
D.A. Smith ◽  
...  
Keyword(s):  
Field Emission ◽  
Growth Parameters ◽  
Ion Beam ◽  
Vacuum Diode ◽  
Basic Operation ◽  
Annealing Conditions ◽  
Ion Beam Assisted Deposition ◽  
Long Time ◽  
Ge Doping ◽  
Diode Voltage

ABSTRACTWe have demonstrated the basic operation of a vacuum diode based on the negative electron affinity polycrystalline AlN thin film emitters. The AlN films, both undoped and Ge doped, were deposited by ion beam assisted deposition (IBAD). The IBAD process utilizes thermal evaporation from either electron-beam or resistance heated sources with ion bombardment from Kaufman-type ion sources at energies from 50 to 1500 eV. Films were post-annealed by rapid thermal annealing and long-time tube furnace annealing in a N2 atmosphere to test improvements in crystallinity. The electrical and transport properties of the films were tested by DC l-V measurements. The structure of the AlN films was investigated by TEM, SIMS, optical absorption, and RBS as a function of growth parameters and annealing. The field emission was tested for films with different Ge doping concentrations, film thickness, diode voltage, and post annealing conditions. Field emission was observed for the undoped AlN films with a thickness of approximately 10 nm.

Field emission from hafnium oxynitride films prepared by ion beam-assisted deposition

2005 ◽  
Vol 242 (3-4) ◽  
pp. 407-411 ◽  
Author(s):  
Yongjin Wang ◽  
Jihua Zhang ◽  
Fumin Zhang ◽  
Feng Zhang ◽  
Shichang Zou
Keyword(s):  
Field Emission ◽  
Ion Beam ◽  
Ion Beam Assisted Deposition ◽  
Hafnium Oxynitride

Ion Beam Sputter Deposition Of Ferroelectric Oxide Thin Films

1991 ◽  
Vol 223 ◽  
Author(s):  
Thomas M. Graettinger ◽  
O. Auciello ◽  
M. S. Ameen ◽  
H. N. Al-Shareef ◽  
K. Gifford ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Growth Parameters ◽  
Ion Beam ◽  
Lead Zirconate ◽  
Electro Optic ◽  
Integrated Optical ◽  
Pzt Films ◽  
Ion Beam Sputter Deposition ◽  
Ferroelectric Oxide

ABSTRACTFerroelectric oxide films have been studied for their potential application as integrated optical materials and nonvolatile memories. Electro-optic properties of potassium niobate (KNbO3) thin films have been measured and the results correlated to the microstructures observed. The growth parameters necessary to obtain single phase perovskite lead zirconate titanate (PZT) thin films are discussed. Hysteresis and fatigue measurements of the PZT films were performed to determine their characteristics for potential memory devices.

Plasmonic properties of titanium nitride thin films prepared by ion beam assisted deposition

2016 ◽  
Vol 185 ◽  
pp. 295-298 ◽  
Author(s):  
Lin-Ao Zhang ◽  
Hao-Nan Liu ◽  
Xiao-Xia Suo ◽  
Shuo Tong ◽  
Ying-Lan Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Titanium Nitride ◽  
Ion Beam ◽  
Ion Beam Assisted Deposition

Fundamental Aspects of Ion Beam Assisted Deposition of Magnesium Oxide Template Films

2009 ◽  
Vol 19 (3) ◽  
pp. 3311-3314 ◽  
Author(s):  
J.R. Groves ◽  
R.F. DePaula ◽  
L. Stan ◽  
R.H. Hammond ◽  
B.M. Clemens
Keyword(s):  
Magnesium Oxide ◽  
Ion Beam ◽  
Ion Beam Assisted Deposition

Optical and electrical properties of p-type zinc oxide thin films synthesized by ion beam assisted deposition

2005 ◽  
Vol 492 (1-2) ◽  
pp. 203-206 ◽  
Author(s):  
Zhi Yan ◽  
Zhi Tang Song ◽  
Wei Li Liu ◽  
Qing Wan ◽  
Fu Min Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Ion Beam ◽  
Optical And Electrical Properties ◽  
Oxide Thin Films ◽  
Ion Beam Assisted Deposition ◽  
P Type

Ion-beam assisted deposition of coating interlayers for the joining of Be/CuCrZr

2010 ◽  
Vol 85 (7-9) ◽  
pp. 1689-1692 ◽  
Author(s):  
Yang-Il Jung ◽  
Jung-Suk Lee ◽  
Jeong-Yong Park ◽  
Byoung-Kwon Choi ◽  
Yong-Hwan Jeong ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Assisted Deposition

A low energy ion beam assisted deposition technique for realizing iso-type SiGe/Si hetero-interface diodes

1996 ◽  
Vol 283 (1-2) ◽  
pp. 182-187
Author(s):  
S Mohajerzadeh ◽  
C.R Selvakumar ◽  
D.E Brodie ◽  
M.D Robertson ◽  
J.M Corbett
Keyword(s):  
Ion Beam ◽  
Low Energy ◽  
Deposition Technique ◽  
Ion Beam Assisted Deposition
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