Tunnel Effects in Luminescence Spectra of InGaN/AlGaN/GaN Light-Emitting Diodes

1996 ◽  
Vol 449 ◽  
Author(s):  
A. E. Yunovich ◽  
A. N. Kovalev ◽  
V. E. Kudryashov ◽  
F. I. Manyachin ◽  
A. N. Turkin ◽  
...  
Keyword(s):  
Spectral Band ◽  
Luminescence Spectra ◽  
Energy Diagram ◽  
Light Emitting ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Recombination Current ◽  
Blue Line ◽  
Tunnel Effects

ABSTRACTTunnel effects in luminescence spectra and electrical properties of blue InGaN/AlGaN/GaN LEDs were studied. The tunnel radiation in a spectral region of 2.1–2.4 eV predominates at low currents (J<0.2 mA). The role of tunnel effects grows as the maximum of the main blue line in LEDs is shifted to short wavelengths. The position of the tunnel maximum ћωmax is approximatly proportional to the voltage eU. The spectral band is described by the theory of tunnel radiative recombination. Current-voltage characteristics have a tunnel component at low direct and reverse currents. The distribution of charged impurities was received from dynamic capacitance measurements. There are charged layers at heterointerfaces and adjacent compensated layers in the structures. There is a high electric field in the active layer. The energy diagram is analysed.

Tunnel radiation in the luminescence spectra of GaN-based heterostructures

2002 ◽  
Vol 743 ◽  
Author(s):  
A. E. Yunovich ◽  
V. E. Kudryashov ◽  
A. N. Turkin ◽  
M. Leroux ◽  
S. Dalmasso
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Spectral Band ◽  
Luminescence Spectra ◽  
Energy Diagram ◽  
Radiation Spectra ◽  
Piezoelectric Fields ◽  
High Electric Fields ◽  
Tunnel Effects ◽  
Ingan Quantum Wells

ABSTRACTTunnel effects in luminescence spectra and electrical properties of LEDs based on InGaN/GaN-heterostructures made by different technological groups were studied. The tunnel radiation in a spectral region of 1.9 - 2.7 eV predominates at low currents (J<0.2 mA). The position of the tunnel luminescence maximum orħħωmax is approximately equal to the voltage U, orħħωmax = eU. The low energy spectral band is described by the theory of tunnel radiative recombination. Tunnel recombination mechanisms in GaN-based heterostructures are caused by high electric fields in the active InGaN/GaN - MQW layers. The energy diagram of the structures is analyzed. The probability of tunnel radiation is higher due to piezoelectric fields in InGaN quantum wells. The tunnel radiation spectral band was not observed in the more effective LEDs with modulated doped MQWs. The spectra of GaN-based LEDs are compared with tunnel radiation spectra of GaAs-, InP- and GaSb- based LEDs. The equation: orħħωmax = eU describes experimental data in various semiconductors in the range 0.5–2.7 eV.

scholarly journals Electrical Properties of Sis Heterostructures n-SnS2/CdTeO3/p-CdZnTe

2019 ◽  
Vol 64 (2) ◽  
pp. 164 ◽  
Author(s):  
I. G. Orletskyi ◽  
M. I. Ilashchuk ◽  
E. V. Maistruk ◽  
M. M. Solovan ◽  
P. D. Maryanchuk ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Charge Accumulation ◽  
Energy Diagram ◽  
Current Voltage ◽  
Temperature Dependences ◽  
Current Voltage Characteristics ◽  
Physical Phenomena ◽  
And Inversion

Conditions for the production of rectifying semiconductor-insulator-semiconductor (SIS) heterostructures n-SnS2/CdTeO3/p-Cd1−xZnxTe with the use of the spray-pyrolysis of SnS2 thin films on p-Cd1−xZnxTe crystalline substrates with the formation of an intermediate tunnel-thin CdTeO3 oxide layer have been studied. By analyzing the temperature dependences of the current-voltage characteristics, the dynamics of the heterostructure energy parameters is determined, and the role of energy states at the CdTeO3/p-Cd1−xZnxTe interface in the formation of forward and reverse currents is elucidated. By analyzing the capacity-voltage characteristics, the processes of charge accumulation and inversion in SIS structures is considered. An energy diagram of the examined heterostructure, which well describes experimental electro-physical phenomena, is proposed.

Effect of deep-level states on current-voltage characteristics and electroluminescence of blue and UV light-emitting diodes

2010 ◽  
Vol 207 (6) ◽  
pp. 1489-1496 ◽  
Author(s):  
R. Nana ◽  
P. Gnanachchelvi ◽  
M. A. Awaah ◽  
M. H. Gowda ◽  
A. M. Kamto ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Deep Level ◽  
Uv Light ◽  
Light Emitting ◽  
Current Voltage ◽  
Current Voltage Characteristics

scholarly journals Светоизлучающие полевые транзисторы на основе композитных пленок полифлуорена и нанокристаллов CsPbBr-=SUB=-3-=/SUB=-

2019 ◽  
Vol 61 (2) ◽  
pp. 388
Author(s):  
А.Н. Алешин ◽  
И.П. Щербаков ◽  
Д.А. Кириленко ◽  
Л.Б. Матюшкин ◽  
В.А. Мошников
Keyword(s):  
Field Effect Transistors ◽  
Composite Films ◽  
Hole Mobility ◽  
Hole Transport ◽  
Component Ratio ◽  
Organic Field Effect Transistors ◽  
Electrical And Optical Properties ◽  
Light Emitting ◽  
Current Voltage ◽  
Current Voltage Characteristics

Abstract—Light-emitting organic field-effect transistors (LE-FETs) on the basis of composite films that consist of perovskite nanocrystals (CsPbBr_3) embedded in a matrix of conjugated polymer—polyfluorene (PFO)—have been obtained, and their electrical and optical properties have been investigated. Output and transfer current-voltage characteristics (I-Vs) of FETs based on PFO : CsPbBr_3 films (component ratio 1 : 1) have a slight hysteresis at temperatures of 100–300 K and are characteristic of hole transport. The hole mobility is ∼3.3 and ∼1.9 cm^2/(V s) at the modes of the saturation and low fields, respectively, at 250 K and reaches ∼5 cm^2/(V s) at 100 K. It has been shown that the application of pulsed voltage to LE-FETs based on PFO : CsPbBr_3 can reduce the ionic conductivity and provide electroluminescence in this structure at 300 K.

Cathode effect on current-voltage characteristics of blue light-emitting diodes based on a polyspirofluorene

2008 ◽  
Author(s):  
G. Garcia-Belmonte ◽  
E. M. Barea ◽  
Y. Ayyad-Limonge ◽  
J. M. Montero ◽  
H. J. Bolink ◽  
...  
Keyword(s):  
Blue Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Current Voltage ◽  
Current Voltage Characteristics

Effect of WO3 Doping on Microstructural and Electrical Properties of ZnO-Pr6O11 Based Varistor Materials

2013 ◽  
Vol 591 ◽  
pp. 54-60
Author(s):  
Xiu Li Fu ◽  
Yan Xu Zang ◽  
Zhi Jian Peng
Keyword(s):  
Grain Size ◽  
Electrical Properties ◽  
Grain Growth ◽  
Doping Level ◽  
Nonlinear Coefficient ◽  
Current Voltage ◽  
Average Grain Size ◽  
Current Voltage Characteristics ◽  
Voltage Performance

The effect of WO3doping on microstructural and electrical properties of ZnO-Pr6O11based varistor materials was investigated. The doped WO3plays a role of inhibitor in ZnO grain growth, resulting in decreased average grain size from 2.68 to 1.68 μm with increasing doping level of WO3from 0 to 0.5 mol%. When the doping level of WO3was lower than 0.05 mol%, the nonlinear current-voltage characteristics of the obtained varistors could be improved significantly with increasing amount of WO3doped. But when the doping level of WO3became higher, their nonlinear current-voltage performance would be dramatically deteriorated when more WO3was doped. The optimum nonlinear coefficient, varistor voltage, and leakage current of the samples were about 13.71, 710 V/mm and 13 μA/cm2, respectively, when the doping level of WO3was in the range from 0.03 to 0.05 mol%.

The Influence of the Magnetic Field on the Current-Voltage Characteristics of CuPc Nanowires

2019 ◽  
Vol 970 ◽  
pp. 75-81
Author(s):  
Alexey Zavgorodniy ◽  
Aitbek Aimukhanov ◽  
Assylbek Zeinidenov ◽  
Galina Vavilova
Keyword(s):  
Magnetic Field ◽  
Carrier Transport ◽  
Copper Phthalocyanine ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Photosensitive Cell ◽  
Positively Charged

The role of spin states in the process of charge carrier transport in copper phthalocyanine (CuPc) nanowires has been established. According to the data obtained, CuPc nanowires are in the η-phase. The current-voltage characteristics (IVC) of a photosensitive cell based on CuPc nanowires in a magnetic field are investigated. As a result of experiments, it was found that applying an external magnetic field, the spins of two positively charged polarons are oriented in one direction. The channel of formation of the bipolaron is blocked. As a result, a decrease in the short-circuit current of the photosensitive cell is observed by more than 61%.

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