scholarly journals Electrical Properties of Sis Heterostructures n-SnS2/CdTeO3/p-CdZnTe

2019 ◽  
Vol 64 (2) ◽  
pp. 164 ◽  
Author(s):  
I. G. Orletskyi ◽  
M. I. Ilashchuk ◽  
E. V. Maistruk ◽  
M. M. Solovan ◽  
P. D. Maryanchuk ◽  
...  

Conditions for the production of rectifying semiconductor-insulator-semiconductor (SIS) heterostructures n-SnS2/CdTeO3/p-Cd1−xZnxTe with the use of the spray-pyrolysis of SnS2 thin films on p-Cd1−xZnxTe crystalline substrates with the formation of an intermediate tunnel-thin CdTeO3 oxide layer have been studied. By analyzing the temperature dependences of the current-voltage characteristics, the dynamics of the heterostructure energy parameters is determined, and the role of energy states at the CdTeO3/p-Cd1−xZnxTe interface in the formation of forward and reverse currents is elucidated. By analyzing the capacity-voltage characteristics, the processes of charge accumulation and inversion in SIS structures is considered. An energy diagram of the examined heterostructure, which well describes experimental electro-physical phenomena, is proposed.

2013 ◽  
Vol 591 ◽  
pp. 54-60
Author(s):  
Xiu Li Fu ◽  
Yan Xu Zang ◽  
Zhi Jian Peng

The effect of WO3doping on microstructural and electrical properties of ZnO-Pr6O11based varistor materials was investigated. The doped WO3plays a role of inhibitor in ZnO grain growth, resulting in decreased average grain size from 2.68 to 1.68 μm with increasing doping level of WO3from 0 to 0.5 mol%. When the doping level of WO3was lower than 0.05 mol%, the nonlinear current-voltage characteristics of the obtained varistors could be improved significantly with increasing amount of WO3doped. But when the doping level of WO3became higher, their nonlinear current-voltage performance would be dramatically deteriorated when more WO3was doped. The optimum nonlinear coefficient, varistor voltage, and leakage current of the samples were about 13.71, 710 V/mm and 13 μA/cm2, respectively, when the doping level of WO3was in the range from 0.03 to 0.05 mol%.


1989 ◽  
Vol 159 ◽  
Author(s):  
Jin Zhao ◽  
N. M. Ravindra

ABSTRACTAn analysis of the Fowler-Nordheim tunneling (FNT) theory and its application to temperature dependent current-voltage characteristics, of very thin films of SiO2 on silicon, is presented. The final results are believed to provide the most complete examination of FN emission theory and predict the breakdown electric field in thin SiO2 films. The role of the roughness, at the Si-SiO2 interface, in determining the FNT current in these structures is also discussed.


1996 ◽  
Vol 449 ◽  
Author(s):  
A. E. Yunovich ◽  
A. N. Kovalev ◽  
V. E. Kudryashov ◽  
F. I. Manyachin ◽  
A. N. Turkin ◽  
...  

ABSTRACTTunnel effects in luminescence spectra and electrical properties of blue InGaN/AlGaN/GaN LEDs were studied. The tunnel radiation in a spectral region of 2.1–2.4 eV predominates at low currents (J<0.2 mA). The role of tunnel effects grows as the maximum of the main blue line in LEDs is shifted to short wavelengths. The position of the tunnel maximum ћωmax is approximatly proportional to the voltage eU. The spectral band is described by the theory of tunnel radiative recombination. Current-voltage characteristics have a tunnel component at low direct and reverse currents. The distribution of charged impurities was received from dynamic capacitance measurements. There are charged layers at heterointerfaces and adjacent compensated layers in the structures. There is a high electric field in the active layer. The energy diagram is analysed.


2019 ◽  
Vol 61 (2) ◽  
pp. 243
Author(s):  
А.М. Ершова ◽  
М.К. Овезов ◽  
И.П. Щербаков ◽  
А.Н. Алешин

AbstractThe electrical properties of the films of organometallic perovskites CH_3NH_3PbBr_3 and CH_3NH_3PbI_3 were studied. Current–voltage characteristics for the CH_3NH_3PbBr_3 and CH_3NH_3PbI_3 samples were measured in a temperature range of 300–80 K, from which the temperature dependences of resistivity ρ( T ) having characteristic points of inflection in a range of 160–240 K were determined. The activation energies of charge carriers prior to and after points of inflection were determined. It is assumed that the observed features in the temperature dependences of resistivity (temperature at the points of inflection) correlate with the temperatures of tetragonal-to-orthorhombic phase transitions for two studied organometallic perovskites (CH_3NH_3PbBr_3 and CH_3NH_3PbI_3).


Author(s):  
Sergey Gango ◽  
Konstantin Gusev ◽  
Evgeniy Ilin ◽  
Mikhail Predtechensky ◽  
Vladimir Solovyev ◽  
...  

Experimental study of single-wall carbon nabotubes (CNT) effect on the electrical properties of polymeric composite materials based on epoxy matrix has been carried out. Direct-current (DC) as well as alternating-current (AC) electrical conductivity of nanocomposites with different CNT concentrations have been investigated in the temperature interval from 293 K to 373 K. Measurements of Seebeck coefficient confirm n-type conductivity of composite with CNTs. Percolation threshold of the composite material under study has been estimated. It has been found that addition of single-wall CNT at low concentration causes hysteresis of current-voltage characteristics and the temperature dependences of electrical conductivity as well as its anisotropy in the samples under study. No noticeable frequency dependence of the AC electrical conductivity has been found in the frequency range from 100 Hz to 300 kHz.


Author(s):  
А.Н. Гусев ◽  
А.С. Мазинов ◽  
В.С. Гурченко ◽  
А.С. Тютюник ◽  
Е.В. Брага

The current-voltage characteristics of hybrid organic materials C48H42N6O2Zn and C54H54N6O2Zn are researched. The method of obtaining, microscopy, as well as the results of infrared spectroscopy and studies of the electrical properties of the obtained thin films of these organic materials based on zinc complexes. The results of calculating the optical band gap are presented. It was found that the resulting thin-film structures have N-shaped current-voltage characteristics.


1994 ◽  
Vol 361 ◽  
Author(s):  
Chang Jung Kim ◽  
Dae Sung Yoon ◽  
Joon Sung Lee ◽  
Chaun Gi Choi ◽  
Won Jong Lee ◽  
...  

ABSTRACTThe (100), (111) and randomly oriented PZT thin films were fabricated on Pt/Ti/Coming 7059 glass using sol-gel method. The thin films having different orientation were fabricated by different drying conditions for pyrolysis. The preferred orientations of the PZT thin films were observed using XRD, rocking curves, and pole figures. The microstructures were investigated using SEM. The hysteresis loops and capacitance-voltage characteristics of the films were investigated using a standardized ferroelectric test system. The dielectric constant and current-voltage characteristics of the films were investigated using an impedance analyzer and pA meter, respectively. The films oriented in a particular direction showed superior electrical characteristics to the randomly oriented films.


2011 ◽  
Vol 13 ◽  
pp. 87-92 ◽  
Author(s):  
M.S.P Sarah ◽  
F.S. Zahid ◽  
M.Z. Musa ◽  
U.M. Noor ◽  
Z. Shaameri ◽  
...  

The photoconductivity of a nanocomposite MEH-PPV:TiO2 thin film is investigated. The nanocomposite MEH-PPV:TiO2 thin film was deposited on a glass substrate by spin coating technique. The composition of the TiO2 powder was varied from 5 wt% to 20 wt% (with 5 wt% interval). The concentration of the MEH-PPV is given by 1 mg/1 ml. The current voltage characteristics were measured in dark and under illumination. The photoconductivity showed increment in value as the composition of the TiO2 is raised in the polymer based solution. The absorption showed augmentation as the amount of TiO2 is increased. The escalation of the current voltage is then supported by the results of surface morphology.


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