Cr/Ni/Au ohmic contacts to the moderately doped p- and n-GaN

1996 ◽  
Vol 449 ◽  
Author(s):  
Taek Kim ◽  
Myung C. Yoo ◽  
Taeil Kim
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ohmic Contacts ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Contact Resistivity ◽  
Sapphire Substrates ◽  
Specific Contact ◽  
Specific Contact Resistivity ◽  
Metalorganic Chemical

ABSTRACTWe report new Cr/Ni/Au and Ni/Cr/Au tri-layer metallization schemes for achieving low resistance ohmic contacts to moderately doped p- (∼1 × 1017/cm3), and n-GaN (∼1 × 1018/cm3) respectively. The metallizations were thermally evaporated on 2 μm-thick GaN layers grown on c-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVD). Comparisons with bi-layer metallizations such as Ni/Au and Cr/Au were also made. The Cr/Ni/Au contacts showed a low specific contact resistivity of 9.1 × 10−5 Ω⋅cm2 to n-GaN while that of Ni/Cr/Au to p-GaN was 8.3 × 10−2 Ω⋅cm2. The Ni/Cr/Au contacts also showed a low specific contact resistivity of 2.6 × 10−4 Ω⋅cm2 to n-GaN. The Ni/Cr/Au metallization could made reasonable ohmic contacts to p- and n-GaN simultaneously

Low Resistance Contacts to P-Type GaN

1997 ◽  
Vol 468 ◽  
Author(s):  
Taek Kim ◽  
Jinseok Khim ◽  
Suhee Chae ◽  
Taeil Kim
Keyword(s):  
Vapor Deposition ◽  
Ohmic Contacts ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Contact Resistivity ◽  
Low Resistance ◽  
Sapphire Substrates ◽  
Specific Contact ◽  
Specific Contact Resistivity ◽  
P Type

ABSTRACTWe report the low resistance ohmic contacts to p-GaN using a Pd/Au bimetal scheme. A specific contact resistivity of 9.1 × 10-3 Ω-cm2 was obtained after annealing. The metallization was e-beam evaporated on 2 μm-thick p-GaN (∼ 9 × 1016/cm3) layers grown on c-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The comparison with other contacts showed that the contact resistivity of the Pd/Au contacts was at least one order smaller than those of Pt/Au and Ni/Au contacts.

Another Step in Developing a Single Wafer Integrated Process: Rapid Thermal Low Pressure Metalorganic Chemical Vapor Deposition of Local Diffused W(Zn) Contacts

1992 ◽  
Vol 282 ◽  
Author(s):  
A. Katz ◽  
A. Feingold ◽  
A. El-Roy ◽  
N. Moriya ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ohmic Contacts ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Semiconductor Layer ◽  
Specific Contact Resistance ◽  
Specific Contact ◽  
Metalorganic Chemical

ABSTRACTA selective deposition of W(Zn) metallization, for formation of diffused ohmic contacts onto InP-based material was realized by means of rapid thermal, low pressure metalorganic chemical vapor deposition (RT-LPMOCVD). The W(Zn) layers were deposited using a reactive gas mixture that contained diethylzinc (DEZn), WF6, H2 and Ar, at temperatures of 450 to 550°C and pressures in the range of 1–5 torr. Uniform andcontinuous layers of W(Zn), 30 to 120 nm thick, were obtained. These layers contained Zn at concentrations higher than 1×l018 cm−3, which was subsequentially in-diffused into the underlying semiconductor layer to form highly doped semiconductor layers as thick as 0.2μm. As a result, the specific contact resistance of the W(Zn)/ In0.53Ga0.47 As contact was reduced to minimum value of 5×l0−6 Ω·cm2. The W(Zn) film were found to be mechanically stable with a small compressive stress of 5.10−8 dyne. cm−2, and dry etch rates of up to 90 nmmin.

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