Reactive ION Beam Etching of GaN Grown By Movpe

1996 ◽  
Vol 449 ◽  
Author(s):  
K. Saotome ◽  
A. Matsutani ◽  
T. Shirasawa ◽  
M. Mori ◽  
T. Honda ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
Ion Beam ◽  
Etching Rate ◽  
Ultra Violet ◽  
Surface Damage ◽  
Wet Etching ◽  
Ion Beam Etching ◽  
Post Process ◽  
Dry Etch ◽  
Reactive Ion Beam Etching

ABSTRACTA dry etch technique using Cl2 based reactive ion beam etching (RIBE) has been developd for GaN-based semiconductor lasers. The etching rate of 350 − 1000 Å/min was obtained. This is applicable for micro fabrication of GaN based materials in the same way as used for other III-V group semiconductors. Furthermore, it is found that the surface damage of GaN layers induced by the RIBE-etch can be removed using ultra-violet assisted wet-etching using alkali solution. The PL intensity of damaged GaN layers is increased after the post-process wet-etching.

Dry Etching of GaN Using Reactive Ion Beam Etching and Chemically Assisted Reactive Ion Beam Etching

1997 ◽  
Vol 468 ◽  
Author(s):  
Jae-Won Lee ◽  
Hyong-Soo Park ◽  
Yong-Jo Park ◽  
Myong-Cheol Yoo ◽  
Tae-Il Kim ◽  
...  
Keyword(s):  
Room Temperature ◽  
Volume Fraction ◽  
Ion Beam ◽  
Etching Rate ◽  
Dry Etching ◽  
Ion Beam Etching ◽  
Etching Profile ◽  
Etching Parameters ◽  
Etching Selectivity ◽  
Reactive Ion Beam Etching

ABSTRACTDry etching characteristics of GaN using reactive ion beam etching (RIBE) were studied. Etching profile, etching rate and etching selectivity to a photoresist (PR) mask were investigated as a function of various etching parameters. Characteristics of chemically assisted reactive ion beam etching (CARIBE) and RIBE were compared at varied mixtures of CH4 and Cl2. A highly anisotropie etching profile with a smooth surface was obtained for tilted RIBE with Ch at room temperature. Etching selectivity to a PR was dramatically improved in RIBE and CARIBE when a volume fraction of CH4 to the mixture of CH4 and Ch was larger than 0.83.

Surface Damage in GaInAs/GaInAsP/InP Wire Structures Prepared by Substrate-Potential-Controlled Reactive Ion Beam Etching

1995 ◽  
Vol 34 (Part 1, No. 6A) ◽  
pp. 3307-3308 ◽  
Author(s):  
Munehisa Tamura ◽  
Yasuaki Nagashima ◽  
Koji Kudo ◽  
Ki-Chul Shin ◽  
Shigeo Tamura ◽  
...  
Keyword(s):  
Ion Beam ◽  
Surface Damage ◽  
Ion Beam Etching ◽  
Substrate Potential ◽  
Reactive Ion Beam Etching

Carbonaceous overlayer and near-surface damage after pure CF4 reactive ion beam etching of silicon: Exposure dose effects

1989 ◽  
Vol 36 (1-4) ◽  
pp. 350-361 ◽  
Author(s):  
C. Lejeune ◽  
J.P. Grandchamp ◽  
J.P. Gilles ◽  
E. Collard ◽  
P. Scheiblin
Keyword(s):  
Ion Beam ◽  
Surface Damage ◽  
Exposure Dose ◽  
Ion Beam Etching ◽  
Near Surface ◽  
Dose Effects ◽  
Reactive Ion Beam Etching

Hydrogen Ion Beam Processing of Single Crystal Diamond Chips

1994 ◽  
Vol 354 ◽  
Author(s):  
Shuji Kiyohara ◽  
Iwao Miyamoto
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Incidence Angle ◽  
Ion Beam ◽  
Etching Rate ◽  
Hydrogen Ion ◽  
Hydrogen Ions ◽  
Ion Beam Etching ◽  
Single Crystal Diamond ◽  
Before And After

AbstractIn order to apply ion beam etching with hydrogen ions to the ultra-precision processing of diamond tools, hydrogen ion beam etching characteristics of single crystal diamond chips with (100) face were investigated. The etching rate of diamond for 500 eV and 1000 eV hydrogen ions increases with the increase of the ion incidence angle, and eventually reaches a maximum at the ion incidence angle of approximately 50°, then may decrease with the increase of the ion incidence angle. The dependence of the etching rate on the ion incidence angle of hydrogen ions is fairly similar to that obtained with argon ions. Furthermore, the surface roughness of diamond chips before and after hydrogen ion beam etching was evaluated using an atomic force microscope. Consequently, the surface roughness after hydrogen ion beam etching decreases with the increase of the ion incidence angle within range of the ion incidence angle of 60°.

Reactive Ion Beam Etching Using a Selective Gallium Doping Method

1989 ◽  
Vol 28 (Part 2, No. 9) ◽  
pp. L1671-L1672
Author(s):  
Kyusaku Nishioka ◽  
Hiroaki Morimoto ◽  
Yoji Mashiko ◽  
Tadao Kato
Keyword(s):  
Ion Beam ◽  
Ion Beam Etching ◽  
Gallium Doping ◽  
Reactive Ion Beam Etching

scholarly journals Focused Ion Beam Etching of GaN

1999 ◽  
Vol 4 (S1) ◽  
pp. 769-774 ◽  
Author(s):  
C. Flierl ◽  
I.H. White ◽  
M. Kuball ◽  
P.J. Heard ◽  
G.C. Allen ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Etching Rate ◽  
Side Wall ◽  
Device Fabrication ◽  
Direct Write ◽  
Ion Beam Etching ◽  
Etched Surface ◽  
A Current ◽  
Established Technique

We have investigated the use of focused ion beam (FIB) etching for the fabrication of GaN-based devices. Although work has shown that conventional reactive ion etching (RIE) is in most cases appropriate for the GaN device fabrication, the direct write facility of FIB etching – a well-established technique for optical mask repair and for IC failure analysis and repair – without the requirement for depositing an etch mask is invaluable. A gallium ion beam of about 20nm diameter was used to sputter GaN material. The etching rate depends linearly on the ion dose per area with a slope of 3.5 × 10−4 μm3/pC. At a current of 3nA, for example, this corresponds to an each rate of 1.05 μm3/s. Good etching qualities have been achieved with a side wall roughness significantly below 0.1 μm. Change in the roughness of the etched surface plane stay below 8nm.

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