Segregation of Copper to (100) and (111) Silicon Surfaces in Equilibrium with Internal Cu3Si Precipitates

1996 ◽  
Vol 448 ◽  
Author(s):  
W. R. Wampler
Keyword(s):  
Free Energy ◽  
Surface Structure ◽  
Silicon Surface ◽  
Chemical Potential ◽  
Silicon Surfaces ◽  
Free Surfaces

AbstractThe energetics of copper segregation to silicon surfaces were examined by measuring the Cu coverage after equilibration between Cu on the surface and internal Cu3Si, for which the Cu chemical potential is known. For oxide-free surfaces the Cu coverage was close to one monolayer on (111) surfaces but was much smaller on (100) surfaces. The Cu coverage was greatly reduced by oxide passivation of the surface. LEED showed the 7×7 structure of the clean (111) silicon surface converted to a quasiperiodic 5×5 structure after equilibrating with Cu3Si. The 2×1 LEED patterns for (100) surfaces indicated no change in surface structure due to the Cu3Si. These results show that the free energy of copper in Cu3Si is higher than that of copper on (111) surfaces but lower than that of copper on (100) surfaces.

Profile Imaging of Silicon Surface Reconstructions

1985 ◽  
Vol 43 ◽  
pp. 262-263
Author(s):  
O.L. Krivanek ◽  
G.J. Wood
Keyword(s):  
Electron Microscopy ◽  
Surface Structure ◽  
Structure Determination ◽  
Silicon Surface ◽  
Good Resolution ◽  
Surface Reconstructions ◽  
Bulk Structure ◽  
Point To Point ◽  
The Relationship

Electron microscopy at 0.2nm point-to-point resolution, 10-10 torr specimei region vacuum and facilities for in-situ specimen cleaning presents intere; ing possibilities for surface structure determination. Three methods for examining the surfaces are available: reflection (REM), transmission (TEM) and profile imaging. Profile imaging is particularly useful because it giv good resolution perpendicular as well as parallel to the surface, and can therefore be used to determine the relationship between the surface and the bulk structure.

scholarly journals A 4d $$ \mathcal{N} $$ = 1 Cardy Formula

2021 ◽  
Vol 2021 (1) ◽  
Author(s):  
Joonho Kim ◽  
Seok Kim ◽  
Jaewon Song
Keyword(s):  
Black Holes ◽  
Free Energy ◽  
Asymptotic Behavior ◽  
High Temperature ◽  
Gauge Theory ◽  
Chemical Potential ◽  
Temperature Limit ◽  
Superconformal Index ◽  
High Temperature Limit ◽  
Cardy Formula

Abstract We study the asymptotic behavior of the (modified) superconformal index for 4d $$ \mathcal{N} $$ N = 1 gauge theory. By considering complexified chemical potential, we find that the ‘high-temperature limit’ of the index can be written in terms of the conformal anomalies 3c − 2a. We also find macroscopic entropy from our asymptotic free energy when the Hofman-Maldacena bound 1/2 < a/c < 3/2 for the interacting SCFT is satisfied. We study $$ \mathcal{N} $$ N = 1 theories that are dual to AdS5 × Yp,p and find that the Cardy limit of our index accounts for the Bekenstein-Hawking entropy of large black holes.

Stars and stripes. Nanoscale misfit dislocation patterns on surfaces

2002 ◽  
Vol 74 (9) ◽  
pp. 1663-1671 ◽  
Author(s):  
Raghani Pushpa ◽  
Shobhana Narasimhan
Keyword(s):  
Surface Structure ◽  
Misfit Dislocation ◽  
Domain Walls ◽  
Chemical Potential ◽  
Model System ◽  
Misfit Dislocations ◽  
Face Centered Cubic ◽  
Hexagonal Close Packed ◽  
Structure Changes ◽  
Face Centered

Close-packed metal surfaces and heteroepitaxial systems frequently display a structure consisting of regularly spaced misfit dislocations, with a network of domain walls separating face-centered cubic (fcc) and hexagonal close-packed (hcp) domains. These structures can serve as templates for growing regularly spaced arrays of nanoislands. We present a theoretical investigation of the factors controlling the size and shape of the domains, using Pt(111) as a model system. Upon varying the chemical potential, the surface structure changes from being unreconstructed to the honeycomb, wavy triangles, "bright stars", or Moiré patterns observed experimentally on Pt(111) and other systems. For the particular case of Pt(111), isotropically contracted star-like patterns are favored over uniaxially contracted stripes.

An Integral Heat Sink for Cooling Microelectronic Components

1993 ◽  
Vol 115 (3) ◽  
pp. 284-291 ◽  
Author(s):  
S. H. Bhavnani ◽  
C.-P. Tsai ◽  
R. C. Jaeger ◽  
D. L. Eison
Keyword(s):  
Heat Sink ◽  
Silicon Surface ◽  
Numerical Study ◽  
High Heat ◽  
Heat Fluxes ◽  
Silicon Surfaces ◽  
Source Surface ◽  
Mouth Size ◽  
Severe Constraint ◽  
Boiling Incipience

Liquid immersion cooling is rapidly becoming the mechanism of choice for the newest generation of supercomputers. Miniaturization at both the chip and module level places a severe constraint on the size of the heat sink employed to dissipate the high heat fluxes generated. A study was conducted to develop a surface that could augment boiling heat transfer from silicon surfaces under these constraints. The surface created consists of reversed pyramidal features etched directly on to the silicon surface. Experiments were conducted in a saturated pool of refrigerant-113 at atmospheric pressure. The inexpensive crystallographic etching techniques used to create the enhanced features are described in the paper. The main characteristics of interest in the present study were the incipient boiling superheat and the magnitude of the temperature overshoot at boiling incipience. Results were obtained for test sections with various cavity densities, and compared with data for the smooth untreated surface. It was found that incipient boiling superheat was reduced from a range of 27.0–53.0° C for the untreated silicon surface, to a range of 2.5–15.0° C for the enhanced surfaces. The overshoot also decreased considerably; from about 12.0–18.0° C for two classes of untreated surfaces, to a range of 1.5–5.3° C for the enhanced surfaces. The values of the incipient boiling superheat, and those of the overshoot decreased with a decrease in cavity mouth size. Two ratios of heat source surface area to the area of the enhanced surface were studied. The overshoot values obtained for these surfaces were compared with those observed for some commonly used enhanced surfaces. An elementary numerical study was conducted to estimate the magnitude of heat spreading.

Unitary Micro-Patterning Structure-Induced Hydrophobic Silicon Surface

2011 ◽  
Vol 239-242 ◽  
pp. 2524-2527
Author(s):  
Si Si Liu ◽  
Chao Hui Zhang ◽  
Han Bing Zhang
Keyword(s):  
Inductively Coupled Plasma ◽  
Silicon Surface ◽  
Scale Effects ◽  
Silicon Surfaces ◽  
Functional Surface ◽  
Inductively Coupled ◽  
Cassie State ◽  
Micro Patterning ◽  
Pillar Arrays ◽  
The Relationship

The relationship between the wettability and the roughness structure on silicon surface is studied. The unitary microscale square pillar arrays are fabricated by the way of inductively coupled plasma (ICP). The wettability of water droplets on the silicon surface is changed from hydrophilic to hydrophobic only by introducing microscale pillarlike structure. Furthermore, the scale effects of the unitary rough structure on hydrophobicity are investigated. For those silicon surfaces with a fixed pillar height, the relatively larger scale of grooves leads the droplets wettability state to unstable Cassie state and the contact angle will initially get larger and then decrease with the increase of groove width. The research could provide further insights into the design of functional surface with controllable roughness-induced hydrophobic.

The Free Energy Simulation Approach to Grain Boundary Segregation In Cu-Ni

1990 ◽  
Vol 209 ◽  
Author(s):  
H. Y. Wang ◽  
R. Najafabadi ◽  
D. J. Srolovitz ◽  
R. Lesar
Keyword(s):  
Monte Carlo ◽  
Free Energy ◽  
Grain Boundary ◽  
Chemical Potential ◽  
Boundary Segregation ◽  
Configurational Entropy ◽  
Accurate Method ◽  
Increasing Temperature ◽  
Atomic Coordinates ◽  
Good Agreement

ABSTRACTA new, accurate method for determining equilibrium segregation to defects in solids is employed to examine the segregation of Cu to grain boundaries in Cu-Ni alloys. The results are in very good agreement with the ones given by Monte Carlo. This method is based upon a point approximation for the configurational entropy, an Einstein model for vibrational contributions to the free energy. To achieve the equilibrium state of a defect in an alloy the free energy is minimized with respect to atomic coordinates and composition of each site at constant chemical potential. One of the main advantages this new method enjoys over other methods such as Monte Carlo, is the efficiency with which the atomic structure of a defect, segregation and thermodynamic properties can be determined. The grain boundary free energy can either increase or decrease with increasing temperature due to the competition between energetic and configurational entropy terms. In general, the grain boundary free energy increases with temperature when the segregation is strongest.

Micro- and Nanotextured Silicon for Antireflective Coatings of Solar Cells

2016 ◽  
Vol 39 ◽  
pp. 89-95 ◽  
Author(s):  
Anatoly Druzhinin ◽  
Valery Yerokhov ◽  
Stepan Nichkalo ◽  
Yevhen Berezhanskyi
Keyword(s):  
Solar Cells ◽  
Conversion Efficiency ◽  
Silicon Substrate ◽  
Chemical Etching ◽  
Silicon Surface ◽  
Crystalline Silicon ◽  
Silicon Surfaces ◽  
Antireflective Coatings ◽  
High Conversion Efficiency ◽  
Industrial Use

The paper deals with obtaining of textured silicon surfaces by chemical etching. As a result of experiments based on the modification and optimization of obtaining a textured silicon, several methods of chemical texturing of the crystalline silicon surface were developed. It was shown that modified isotropic and anisotropic etching methods are applicable to create a microrelief on the surface of silicon substrate. These methods in addition to their high conversion efficiency can be used for both mono- and multicrystalline silicon which would ensure their industrial use.

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