Characterization of a‐SiNx Thin Film Deposited By Inductively Coupled Plasma Enhanced Chemical Vapor Deposition

1996 ◽  
Vol 446 ◽  
Author(s):  
Sang‐Soo Han ◽  
Byung‐Hyuk Jun ◽  
Kwangsoo No ◽  
Byeong‐Soo Bae
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Substrate Temperature ◽  
Flow Rate ◽  
Hydrogen Content ◽  
Vapor Deposition ◽  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Rf Power ◽  
Inductively Coupled

AbstractSilicon nitride thin films are deposited at low temperature using the inductively coupled plasma enhanced chemical vapor deposition.(ICP‐CVD) N2 and SiH4 gases are used as reactant gases for deposition of silicon nitride thin films with low hydrogen content. Composition, refractive index, and hydrogen content of the films were examined with variation of N2 flow rate, RF power and substrate temperature. As N2 flow rate and RF power increase and substrate temperature is lowered, N/Si ratio is reduced producing higher refractive index of the film. Hydrogen content of the films is calculated by FTIR spectroscopy and is much less than those of the films deposited by conventional PECVD using SiH4/N2 gases since N2 gas is used instead of NH3 gas. Total hydrogen content is constant regardless of RF Power and N2 flow rate. However, the hydrogen content decreases with increasing substrate temperature due to the release of hydrogen at high temperature.

Characterization of Intrinsic a-Si:H Films Prepared by Inductively Coupled Plasma Chemical Vapor Deposition for Solar Cell Applications

2007 ◽  
Vol 7 (11) ◽  
pp. 4169-4173 ◽  
Author(s):  
Chaehwan Jeong ◽  
Seongjae Boo ◽  
Minsung Jeon ◽  
Koichi Kamisako
Keyword(s):  
Surface Roughness ◽  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Vapor Deposition ◽  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Rf Power ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Inductively Coupled

The hydrogenated amorphous silicon (a-Si:H) films, which can be used as the passivation or absorption layer of solar cells, were prepared by inductively coupled plasma chemical vapor deposition (ICP-CVD) and their characteristics were studied. Deposition process of a-Si:H films was performed by varying the parameters, gas ratio (H2/SiH4), radio frequency (RF) power and substrate temperature, while a working pressure was fixed at 70 m Torr. Their characteristics were studied by measuring thickness, optical bandgap (eV), photosensitivity, bond structure and surface roughness. When the RF power and substrate temperature were 300 watt and 200 °C, respectively, optical bandgap and photosensitivity, similar to the intrinsic a-Si:H film, were obtained. The Si-H stretching mode at 2000 cm−1, which means a good quality of films, was found at all conditions. Although the RF power increased up to 400 watt, average of surface roughness got better, compared to a-Si:H films deposited by the conventional PECVD method. These results show the potential for developing the solar cells using ICP-CVD, which have the relatively less damage of plasma.

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