Evaluation of PTFE Nanoemulsion as a Low Dielectric Constant Material ILD

1996 ◽  
Vol 443 ◽  
Author(s):  
S. C. Sun ◽  
Y. C. Chiang ◽  
C. T. Rosenmayer ◽  
J. Teguh ◽  
H. Wu
Keyword(s):  
Dielectric Constant ◽  
Integrated Circuit ◽  
Moisture Absorption ◽  
Dielectric Material ◽  
Dielectric Strength ◽  
Index Of Refraction ◽  
Low Dielectric Constant ◽  
Nanoparticle Dispersion ◽  
Positive Photoresist ◽  
Low Dielectric

AbstractPolytetrafluoroethylene (PTFE) has been studied as a low dielectric constant material for ULSI. A novel nanoparticle dispersion of PTFE was developed that permits the spin-coat deposition of PTFE with a thickness range of 0.2 to 1.5 μm. These PTFE nanoemulsions are aqueous emulsions containing sub-50 nm size PTFE particles and surfactant that are thermodynamically stable, optically clear, and have low viscosity and surface tension. The films cast from this nanoemulsion are uniform in thickness with a standard deviation of < 2%. From FTIR spectra, significant amounts of C-F bonds (1153 cm−1 and 1211 cm−1) are detected in the films. The index of refraction from ellipsometry measurement is about 1.35 and the dielectric constant measured from high frequency C-V curves is about 1.85. The dielectric strength is about 170 V/ μm. TGA data indicates a weight loss rate of less than 0.25%/hr. at 425 °C. The moisture absorption is less than 0.01%. After sintering, the films are extremely resistant to chemical attack by sulfuric acid, buffered HF, and positive photoresist developer. The etch rate in an oxygen plasma at 30 W is around 200 nm/min. Stud pull tests indicate good adhesion to SiO2, Al, and Cu. Results of thermal, dielectric, chemical, and adhesion tests indicate that these PTFE films have potential for use as an integrated circuit dielectric material.

Poly(Arylene Ethers) as Low Dielectric Constant Materials for ULSI Interconnect Applications

1996 ◽  
Vol 443 ◽  
Author(s):  
Raymond N. Vrtis ◽  
Kelly A. Heap ◽  
William F. Burgoyne ◽  
Lloyd M. Robeson
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Moisture Absorption ◽  
Dielectric Material ◽  
Mechanical Analysis ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Arylene Ether ◽  
Low Dielectric Constant Materials ◽  
Excellent Adhesion

AbstractPoly(arylene ethers)s are low dielectric constant organic spin on materials. PAE-2, which is a non-fluorinated poly(arylene ether), exhibits a dielectric constant below 3.0, thermal stability greater than 425 °C as well as excellent adhesion to Si, SiO2, and Al. These are the major atributes which makes it a very attractive candidate for integration as an interlevel or inter-metal dielectric material (ILD). Material properties including dielectric constant, thermal stability, moisture absorption, and mechanical analysis will be discussed.

Adhesion and Dielectric Strength of Ultra-Low Dielectric Constant PTFE Thin Films

1997 ◽  
Vol 476 ◽  
Author(s):  
C.T. Rosenmaver ◽  
J. W. Bartz ◽  
J. Hammes
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Strength ◽  
Low Dielectric Constant ◽  
Thermal Treatments ◽  
Test Results ◽  
Low Dielectric ◽  
Metal Insulator Metal ◽  
Thickness Standard ◽  
High Dielectric

AbstractPrevious work has demonstrated the potential of polytetrafluoroethylene (PTFE) thin films for ULSI applications. The films are deposited from PTFE nanoemulsions. They have an ultra-low dielectric constant of 1.7 to 2.0, a leakage current of less than 1.0 nA/cm2 @ 0.2 MV/cm and a dielectric strength of from 0.5 to 2.4 MV/cm. They are thermally stable (isothermal weight loss < 1.0 %/hr at 450 °C), uniform (thickness standard deviation < 2%), and have excellent gap-fill properties (viscosity of 1.55 cP and surface tension of 18 mN/m). The films are inert with respect to all known semiconductor process chemicals, yet they are easily etched in an oxygen plasma.This paper discusses the processing technology that has been developed to process PTFE films with these properties. Specifically, it addresses two recent discoveries: 1) Good adhesion of spin-coated PTFE to SiO2 surfaces; and 2) high dielectric strength of PTFE thin films spin-coat deposited onto rigid substrates. The adhesion-promoting and thermal treatments necessary to produce these properties are detailed. Stud pull test results and test results from metal-insulator-metal (MIM) capacitor structures are given.

Polynorbornene for Low K Interconnection

1997 ◽  
Vol 476 ◽  
Author(s):  
N. R. Grove ◽  
P. A. Kohl ◽  
S. A. Bidstrup-Allen ◽  
R. A. Shick ◽  
B. L. Goodall ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Glass Transition ◽  
Transition Temperature ◽  
Glass Transition Temperature ◽  
Moisture Absorption ◽  
Electrical Performance ◽  
Low Dielectric Constant ◽  
High Glass Transition Temperature ◽  
Low Dielectric ◽  
Microelectronics Industry

AbstractWithin the microelectronics industry, there is an ongoing trend toward miniaturization coupled with higher performance. The scaling of transitors toward smaller dimensions, higher speeds, and lower power has resulted in an urgent need for low dielectric constant interlevel insulators. Low dielectric constant interlevel dielectrics have already been identified as being critical to the realization of high performance integrated circuits in the SLA Roadmap. Thus, there exists a need in the microelectronics industry for a thermally stable, noncorrosive low dielectric constant polymer with good solvent resistance, high glass transition temperature, good mechanical performance and good adhesive properties, particularly to copper. In addition, the desired dielectric material should be capable of being processed in environmentally friendly solvents, and the final thermal and electrical performance should not be affected by manufacturing or post environmental conditions. High glass transition temperature polynorbornenes are being developed which provide many of these desired features. This polymer family is produced via a new transition metal catalyzed polymerization. Attributes which make polynorbornene particularly attractive in microelectronics include: (i) excellent thermal performance, (ii) adhesion to conductors without the use of adhesion promoters or barrier layers, (iii) very low moisture absorption (< 0.1 wt %), and (iv) low dielectric constant (2.2 – 2.6). Side groups which have been added to the polynorbornene backbone improve adhesion, dielectric properties and mechanical properties.

Preparation of Low Dielectric Constant Porous Silicon Nitride Ceramics for Radome Application

2018 ◽  
Vol 281 ◽  
pp. 610-615
Author(s):  
Ling Li ◽  
Bao Xin Zhu ◽  
Hong Sheng Wang ◽  
Jie Zhang
Keyword(s):  
Dielectric Constant ◽  
Silicon Nitride ◽  
Porous Silicon ◽  
Flexural Strength ◽  
Dielectric Material ◽  
Core Layer ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Dielectric Constant And Loss ◽  
Nitride Ceramics

The porous silicon nitride ceramics with low dielectric constant and high flexural strength were obtained by adding pore-forming agent through partial sintering technique. The effects of pore-forming agent amount on the properties of porous silicon nitride ceramics were investigated. Microstructure was analyzed by means of scanning electron microscopy. The results show that the porous structure is formed by the overlap of pillar β-Si3N4 with high length diameter ratio. The porosity of samples rises with the increase of pore-forming agent content, which leads to the decrease of the dielectric constant and loss, but the decrease of flexural strength. When the pore-forming agent of PMMA with mass fraction of 20% was added, the volume density, porosity, dielectric constant and loss of porous silicon nitride ceramics were 1.17g/cm3, 66.5%, 2.33 and 0.8×10-3 respectively, with higher flexural strength of 75MPa which is satisfactory as low dielectric material for core layer of broadband radome.

Ptfe Nanoemulsions as Spin-On, Low Dielectric Constant Materials For Ulsi Applications

1996 ◽  
Vol 427 ◽  
Author(s):  
Tom Rosenmayer ◽  
Huey Wu
Keyword(s):  
Dielectric Constant ◽  
Integrated Circuit ◽  
Equilibrium Phase ◽  
Low Dielectric Constant ◽  
Full Density ◽  
Low Dielectric ◽  
Low Viscosity ◽  
Liquid Material ◽  
Low Dielectric Constant Materials ◽  
Interconnect Lines

AbstractULSI Interconnects require insulative materials with as low a dielectric constant as possible in order to minimize crosstalk and parasitic capacitance. Transmission line simulations indicate that crosstalk in parallel interconnect lines can be dramatically reduced by lowering the dielectric constant of the insulation from 4 to 2. Polytetrafluoroethylene (PTFE) has a desirably low dielectric constant (2.05), but has previously been difficult to deposit in thin films suitable for integrated circuit applications. PTFE has other desirable properties, including temperature resistance in excess of 400 C and outstanding chemical resistance.A novel liquid material has been developed which permits the spin coat deposition of full density PTFE films from 0.2 to 1.0 microns thick. The deposition liquid is a solvent-free, stable PTFE nanoemulsion consisting of fully cured < 0.05 micron particles, surfactant, and water. The nanoemulsion is an equilibrium phase which is thermodynamically stable, optically clear, and has low viscosity. These properties are achieved because of the unusually small particle size of the nanoemulsion. The films are uniform in thickness with a standard deviation of < 2% and edge-to-center variation of < 5%. The films have a weight loss rate of less than 0.008%/min at 425 ° C. Good adhesion to Al, Si3N4, Si, and SiO2 is obtained when the films are evaluated per ASTM D3359-93. Several reseachers have reported methods by which various materials may be deposited onto PTFE with acceptable results.

Development of a Low-Dielectric-Constant Polymer for the Fabrication of Integrated Circuit Interconnect

2000 ◽  
Vol 12 (23) ◽  
pp. 1769-1778 ◽  
Author(s):  
S. J. Martin ◽  
J. P. Godschalx ◽  
M. E. Mills ◽  
E. O. Shaffer II ◽  
P. H. Townsend
Keyword(s):  
Dielectric Constant ◽  
Integrated Circuit ◽  
Low Dielectric Constant ◽  
Low Dielectric

scholarly journals Dielectric Constant Enhancement with Low Dielectric Loss Growth in Graphene Oxide/Mica/Polypropylene Composites

2021 ◽  
Vol 5 (2) ◽  
pp. 52
Author(s):  
Chao-Yu Lee ◽  
Chia-Wei Chang
Keyword(s):  
Dielectric Constant ◽  
Graphene Oxide ◽  
Dielectric Loss ◽  
Energy Density ◽  
Breakdown Strength ◽  
Dielectric Material ◽  
Dielectric Strength ◽  
Self Healing ◽  
Organic Thin Film ◽  
Low Dielectric

Polypropylene has been widely used as dielectric material in organic thin-film capacitors due to their high breakdown strength, low dielectric loss and self-healing capability. However, polypropylene’s energy density is relatively low. Increasing the energy density of polypropylene by adding materials with a high dielectric constant is commonly used. Still, it often leads to an increase in dielectric loss, lower dielectric strength and other shortcomings. In this study, a thin 2D platelet of mica/graphene oxide composite material was made from exfoliated mica as a substrate and attached by graphene oxide. The mica/graphene oxide platelets were added to polypropylene to make a plastic dielectric composite. The non-conductive flat inorganic additive can increase the dielectric constant and dielectric strength of the composite without increasing dielectric loss. The tiny mica/graphene oxide platelets can significantly improve the dielectric properties of polypropylene. The results show that by adding a small amount (less than 1 wt%) mica/graphene oxide, the relative dielectric constant of polypropylene can increase to more than 3.7 without causing an increase in dielectric loss and the dielectric strength of polypropylene can also enhance.

Review of Low Dielectric Constant Thick Film Electronic Ceramics Using Hollow Microspheres

1994 ◽  
Vol 372 ◽  
Author(s):  
David W. Kellerman
Keyword(s):  
Dielectric Constant ◽  
Thick Film ◽  
Integrated Circuit ◽  
High Speed ◽  
Semiconductor Devices ◽  
Dielectric Constants ◽  
Hollow Microspheres ◽  
Low Dielectric Constant ◽  
Film Material ◽  
Low Dielectric

AbstractHigh speed interconnects for semiconductor devices require low dielectric constant materials to minimize propagation delays and capacitive line loading. Ceramics and thick film materials have been utilized to package these semiconductor devices, however their dielectric constants are prohibitively high. Hollow microspheres have been added to thick film glass and ceramic composite materials to lower the dielectric constant of those materials. This paper will review papers presented on the work done at Digital Equipment Corporation and EMCA-Remex to develop high speed integrated circuit packages with low dielectric constants.Presented will be the development and characterization of the low dielectric constant thick film material, processes used to fabricate devices with the low dielectric constant material, and development of the application of the material to an advanced ceramic integrated circuit package.

ALX Polymer for Wafer Level Packaging: Mechanical Property Evaluation After Multiple Lead-Free Solder Reflows

2010 ◽  
Vol 2010 (DPC) ◽  
pp. 001054-001079
Author(s):  
Takeshi Eriguchi ◽  
Orson Wang ◽  
Kaori Tsuruoka ◽  
Yuichiro Ishibashi ◽  
Yong Zhang
Keyword(s):  
Mechanical Property ◽  
Dielectric Constant ◽  
Moisture Absorption ◽  
Lead Free ◽  
Low Dielectric Constant ◽  
Lead Free Solder ◽  
Wafer Level ◽  
Low Dielectric ◽  
Wafer Level Packaging ◽  
Free Solder

For bumping and wafer level packaging (WLP) applications, BCB and polyimide are the predominant spin-on dielectric materials used for re-passivation, redistribution, interlayer dielectric, and stress buffer layers. Each of these materials has their respective strengths and weaknesses. BCB has exceptionally low shrinkage on cure and moisture absorption, low curing temperature, and a low dielectric constant, but is a mechanically brittle material which limits its application in bump-on-polymer applications. Polyimides are superior mechanically to BCB and are utilized more in bump-on-polymer structures, but suffer from much higher shrinkage on cure and moisture absorption (which can lead to blistering if not carefully processed), have higher dielectric constants, and have much higher cure temperatures. ALX spin-on polymer dielectric was developed to combine low shrinkage, low moisture absorption, low dielectric constant, and excellent mechanical and stress buffering properties with a cure temperature between 190C to 250C, depending on the application(1-3). Previous papers have reported the mechanical properties at 190C and the application of ALX in eutectic SnPb solder bump structures. The use of lead-free solder requires reflow temperatures up to 260C. Although ALX polymer is curable at less than 200C, the influence of lead-free solder reflow wasnft investigated. In this presentation we evaluate mechanical property changes of ALX Polymer films after different cure schedules and multiple reflows at lead-free solder temperatures. The impact of these parameters on WLP will be discussed.

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