Ptfe Nanoemulsions as Spin-On, Low Dielectric Constant Materials For Ulsi Applications

1996 ◽  
Vol 427 ◽  
Author(s):  
Tom Rosenmayer ◽  
Huey Wu
Keyword(s):  
Dielectric Constant ◽  
Integrated Circuit ◽  
Equilibrium Phase ◽  
Low Dielectric Constant ◽  
Full Density ◽  
Low Dielectric ◽  
Low Viscosity ◽  
Liquid Material ◽  
Low Dielectric Constant Materials ◽  
Interconnect Lines

AbstractULSI Interconnects require insulative materials with as low a dielectric constant as possible in order to minimize crosstalk and parasitic capacitance. Transmission line simulations indicate that crosstalk in parallel interconnect lines can be dramatically reduced by lowering the dielectric constant of the insulation from 4 to 2. Polytetrafluoroethylene (PTFE) has a desirably low dielectric constant (2.05), but has previously been difficult to deposit in thin films suitable for integrated circuit applications. PTFE has other desirable properties, including temperature resistance in excess of 400 C and outstanding chemical resistance.A novel liquid material has been developed which permits the spin coat deposition of full density PTFE films from 0.2 to 1.0 microns thick. The deposition liquid is a solvent-free, stable PTFE nanoemulsion consisting of fully cured < 0.05 micron particles, surfactant, and water. The nanoemulsion is an equilibrium phase which is thermodynamically stable, optically clear, and has low viscosity. These properties are achieved because of the unusually small particle size of the nanoemulsion. The films are uniform in thickness with a standard deviation of < 2% and edge-to-center variation of < 5%. The films have a weight loss rate of less than 0.008%/min at 425 ° C. Good adhesion to Al, Si3N4, Si, and SiO2 is obtained when the films are evaluated per ASTM D3359-93. Several reseachers have reported methods by which various materials may be deposited onto PTFE with acceptable results.

Organic and Inorganic Spin-On Polymers for Low-Dielectric-Constant Applications

MRS Bulletin ◽  
1997 ◽  
Vol 22 (10) ◽  
pp. 33-38 ◽  
Author(s):  
Nigel P. Hacker
Keyword(s):  
Dielectric Constant ◽  
Integrated Circuit ◽  
Chemical Properties ◽  
Chemical Vapor ◽  
Polymeric Materials ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Chip Size ◽  
Low Dielectric Constant Materials

Low-dielectric-constant materials (k < 3.0) have the advantage of facilitating manufacture of higher performance integrated-circuit (IC) devices with minimal increases in chip size. The reduced capacitance given by these materials permits shrinkage of spacing between metal lines to below 0.25 μm and the ability to decrease the number of levels of metal in a device. The technologies being considered for low-k applications are chemical vapor deposition (CVD) or spin-on of polymeric materials. For both types of processes, there are methods and materials capable of giving k < 3.0 dielectric stacks. This article will focus on the spin-on approach and discuss the properties of both organic and inorganic spin-on polymers.While CVD SiO2 has been the mainstay of the industry, spin-on materials are appropriate for many dielectric applications. Polyimides have applications as electrical insulators, and traditional spin-on silicates or siloxanes (k > 3.0) have served as planarizing dielectrics during the last 15 years. The newer spin-on polymers have greatly enhanced mechanical, thermal, and chemical properties, exhibiting lower dielectric constants than the traditional materials.

Curing Process Window and Thermal Stability of Porous MSQ-Based Low-Dielectric-Constant Materials

2004 ◽  
Vol 151 (6) ◽  
pp. F146 ◽  
Author(s):  
Shou-Yi Chang ◽  
Tzu-Jen Chou ◽  
Yung-Cheng Lu ◽  
Syun-Ming Jang ◽  
Su-Jien Lin ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Process Window ◽  
Curing Process ◽  
Low Dielectric ◽  
Low Dielectric Constant Materials ◽  
Thermal Stability Of

Low Dielectric Constant Materials for IC Intermetal Dielectric Applications: A Status Report on the Leading Candidates

1996 ◽  
Vol 443 ◽  
Author(s):  
Neil H. Hendricks
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Process Integration ◽  
Electrical Performance ◽  
Low Dielectric Constant ◽  
Status Report ◽  
Structure Property ◽  
Chemical Structures ◽  
Low Dielectric ◽  
Low Dielectric Constant Materials

AbstractFor over two years, intensive efforts at SEMATECH and elsewhere have focused on identifying low dielectric constant (low ε) materials which possess all of the required properties and processing characteristics needed for integration into standard IC fabrication lines. To date, no material candidate has been shown to satisfy this impressive list of requirements. For some candidates, drawbacks related to material properties such as poor thermal stability or electrical performance have been identified; in other cases, problems in process integration, for example difficulties in patterning have stalled progress.In this paper, most of the current leading candidates for the low ε IC IMC application are identified and discussed. An attempt is made to correlate structure/property relationships in these materials with their relative attributes and deficiencies as they relate to the IMD application. Key differences in chemistry and property/processing characteristics are contrasted for low c silicon-oxygen polymers and for purely organic polymers. Novel dielectrics such as porous organic and inorganic thin films are also discussed in terms of their properties and associated process integration challenges. Since the needs for global planarization and low c IMD are occurring within roughly the same generation of minimum feature size (˜ 0.25 μm), the chemical mechanical polishing (CMP) of low dielectric constant thin films and/or of SiO2 layers deposited above them is briefly discussed. Both subtractive metalization and damascene processes are included, and the required low dielectric constant film properties and processing characteristics are contrasted for each process. Finally, the author's views on future trends in low dielectric constant materials development are presented, with an emphasis on identifying the types of chemical structures which may prove viable for this most demanding of all polymer film applications.

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