Comparison of Three Low Dielectric Constant Organic Polymers

1996 ◽  
Vol 443 ◽  
Author(s):  
C. B. Case ◽  
C. J. Case ◽  
A. Kornblit ◽  
M. E. Mills ◽  
D. Castillo ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Low Temperature ◽  
Physical Properties ◽  
Material Properties ◽  
Low Dielectric Constant ◽  
Organic Polymers ◽  
Low Dielectric ◽  
Multi Level

AbstractThree low dielectric constant organic polymers are being investigated for possible use in a conventional, subtractive etch, multi-level metal process with PVD Al plugs. Material properties, physical properties, planarization ability and etch chemistries are compared, as well as the possibility of using these materials in a low temperature PVD A1 plug process.

scholarly journals The Effects of MnO2 Addition on the Physical Properties of Pb(Ni1/3Nb2/3)O3-Pb(Zr,Ti)O3-Pb(Mg1/2W1/2)O3-BiFeO3 Ceramics

Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 269
Author(s):  
Juhyun Yoo ◽  
Jonghyun Lee
Keyword(s):  
Dielectric Constant ◽  
Low Temperature ◽  
Physical Properties ◽  
Piezoelectric Properties ◽  
Piezoelectric Actuators ◽  
Low Dielectric Constant ◽  
Low Temperature Sintering ◽  
Device Application ◽  
Low Dielectric ◽  
Piezoelectric Devices

In this paper, for the application to multi-layer piezoelectric devices capable of being used in piezoelectric speakers, Pb(Ni1/3Nb2/3)O3-Pb(Zr,Ti)O3-BiFeO3 ceramics substituted with Pb(Mg1/2W1/2)O3 were manufactured according to MnO2 addition, and their physical properties were studied. At non-doped MnO2 added specimen, the maximum values of piezoelectric properties were shown, respectively: the εr of 2182, d33 of 513 pC/N, and kp of 0.634. When taking into consideration the low dielectric constant and high d33 in case of increasing the numbers of multilayer in ceramics, the x = 0.2 composition ceramics was suitable for the device application such as speaker using low-temperature sintering multilayer piezoelectric actuators.

Photo-induced Large Area Growth Of Dielectrics With Excimer Lamps

2000 ◽  
Vol 617 ◽  
Author(s):  
Ian W. Boyd ◽  
Jun-Ying Zhang
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Low Temperature ◽  
Leakage Current ◽  
Sol Gel ◽  
Low Dielectric Constant ◽  
Large Area ◽  
Excimer Lamp ◽  
Low Dielectric ◽  
Current Densities

AbstractIn this paper, UV-induced large area growth of high dielectric constant (Ta2O5, TiO2and PZT) and low dielectric constant (polyimide and porous silica) thin films by photo-CVD and sol-gel processing using excimer lamps, as well as the effect of low temperature LW annealing, are discussed. Ellipsometry, Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), UV spectrophotometry, atomic force microscope (AFM), capacitance-voltage (C-V) and current-voltage (I-V) measurements have been employed to characterize oxide films grown and indicate them to be high quality layers. Leakage current densities as low as 9.0×10−8 Acm−2 and 1.95×10−7 Acm−2 at 0.5 MV/cm have been obtained for the as-grown Ta2O5 films formed by photo-induced sol-gel processing and photo-CVD. respectively - several orders of magnitude lower than for any other as-grown films prepared by any other technique. A subsequent low temperature (400°C) UV annealing step improves these to 2.0×10−9 Acm−2 and 6.4× 10−9 Acm−2, respectively. These values are essentially identical to those only previously formed for films annealed at temperatures between 600 and 1000°C. PZT thin films have also been deposited at low temperatures by photo-assisted decomposition of a PZT metal-organic sol-gel polymer using the 172 nm excimer lamp. Very low leakage current densities (10−7 A/cm2) can be achieved, which compared with layers grown by conventional thermal processing. Photo-induced deposition of low dielectric constant organic polymers for interlayer dielectrics has highlighted a significant role of photo effects on the curing of polyamic acid films. I-V measurements showed the leakage current density of the irradiated polymer films was over an order of magnitude smaller than has been obtained in the films prepared by thermal processing. Compared with conventional furnace processing, the photo-induced curing of the polyimide provided both reduced processing time and temperature, A new technique of low temperature photo-induced sol-gel process for the growth of low dielectric constant porous silicon dioxide thin films from TEOS sol-gel solutions with a 172 nm excimer lamp has also been successfully demonstrated. The dielectric constant values as low as 1.7 can be achieved at room temperature. The applications investigated so far clearly demonstrate that low cost high power excimer lamp systems can provide an interesting alternative to conventional UV lamps and excimer lasers for industrial large-scale low temperature materials processing.

Camber development during cofiring Ag-based low-dielectric-constant ceramic package

1997 ◽  
Vol 12 (10) ◽  
pp. 2743-2750 ◽  
Author(s):  
Jau-Ho Jean ◽  
Chia-Ruey Chang
Keyword(s):  
Dielectric Constant ◽  
Low Temperature ◽  
Layered Structure ◽  
Mathematical Analysis ◽  
Low Dielectric Constant ◽  
Green Tape ◽  
Root Cause ◽  
Low Dielectric ◽  
Ag Film ◽  
Good Agreement

Camber (curvature) development during cofiring a two-layered structure of Ag film/low-dielectric-constant, low-temperature cofired ceramic (LTCC) green tape has been investigated. At a given thickness of Ag film, both the camber and camber rate decrease linearly with increasing the square thickness of LTCC. Densification mismatch between Ag and LTCC is attributed to be the root cause for the camber generation during cofiring. Mathematical analysis is made to theoretically describe the camber development, and the results show a fairly good agreement with experimental observations.

Low‐Dielectric Constant and Low‐Temperature Curable Polyimide/POSS Nanocomposites

2019 ◽  
Vol 304 (12) ◽  
pp. 1900505 ◽  
Author(s):  
Chao Huang ◽  
Jinhui Li ◽  
Guangxia Xie ◽  
Fei Han ◽  
Dongxu Huang ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Low Temperature ◽  
Low Dielectric Constant ◽  
Low Dielectric

Introducing DuPont™ GreenTape™ 9K5 Low Dielectric Constant, Low Temperature Co-Fired Ceramic (LTCC) Tape System

2011 ◽  
Vol 2011 (1) ◽  
pp. 000544-000552
Author(s):  
Deepukumar M. Nair ◽  
James Parisi ◽  
K.M. Nair ◽  
Mark McCombs ◽  
Michael Smith ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Low Temperature ◽  
Millimeter Wave ◽  
High Speed ◽  
High Reliability ◽  
Signal Propagation ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Material System ◽  
Low Dielectric

Low Temperature Co-fired Ceramic (LTCC) material systems have been successfully used in microwave and millimeter wave systems for several years. LTCC has very low dielectric loss, high reliability due to inherent hermeticity; high interconnect density, multilayer processing capability leading to true 3D packaging, and better cost-performance balance. While the medium range dielectric constants (7.00 – 8.00) offered by current tape systems have advantages, it is generally difficult to realize high speed systems and efficient antennas on LTCC, especially at millimeter wave frequencies. The difficulty arises from the reduced signal propagation velocity in high-speed applications, and lower radiation efficiency for antennas, both due to higher dielectric constant. To enable and extend applications of LTCC technology to these subsystems, DuPont has developed a new low dielectric constant LTCC system – DuPont™ GreenTape™ 9K5 - which has a dielectric constant of 5.80 (at 10 GHz) that is compatible with the commercial DuPont™ GreenTape™ 9K7 LTCC System. This is achieved without compromising excellent microwave loss properties of the 9KX GreenTape™ platform. These materials systems enable high-speed, high reliability applications while also realizing efficient antennas on LTCC. This paper presents initial characterization of the new DuPont™ GreenTape™ 9K5 LTCC system consisting of low K dielectric tape, gold and silver conductors to evaluate the effects of chemistry, processing conditions, processing latitude, microstructure, and microwave performance. Test coupons with various transmission and resonating structures are designed, fabricated, and tested for the evaluation of transmission losses and dielectric properties. Stability of the material system over multiple re-fire steps is also examined

Effect of material properties on integration damage in organosilicate glass films

2001 ◽  
Vol 16 (12) ◽  
pp. 3335-3338 ◽  
Author(s):  
E. Todd Ryan ◽  
Jeremy Martin ◽  
Kurt Junker ◽  
Jeff Wetzel ◽  
David W. Gidley ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Material Properties ◽  
Chemical Vapor ◽  
Low Dielectric Constant ◽  
Low Density ◽  
Etch Patterns ◽  
Low Dielectric ◽  
Organosilicate Glass

Most organosilicate glass (OSG), low dielectric constant (low-κ) films contain Si–R groups, where R is an organic moiety such as −CH3. The organic component is susceptible to the chemically reactive plasmas used to deposit cap layers, etch patterns, and ash photoresist. This study compares a spin-on, mesoporous OSG film with a completely connected pore structure to both its nonmesoporous counterpart and to another low-density OSG film deposited by plasma-enhanced chemical vapor deposition. The results show that the film with connected pores was much more susceptible to integration damage than were the nonmesoporous OSG films.

scholarly journals Facile Functionalization of Poly(Dimethylsiloxane) Elastomer by Varying Content of Hydridosilyl Groups in a Crosslinker

Polymers ◽  
2019 ◽  
Vol 11 (11) ◽  
pp. 1842
Author(s):  
Seung Park ◽  
Bong Park ◽  
Mee Choi ◽  
Dong Kim ◽  
Jae Yoon ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Ethylene Glycol ◽  
Physical Properties ◽  
Divinyl Ether ◽  
Low Dielectric Constant ◽  
Simple Method ◽  
Low Dielectric ◽  
Initial Modulus ◽  
Pdms Elastomer ◽  
High Elasticity

Crosslinked poly(dimethylsiloxane) (PDMS) has been widely used as a dielectric elastomer for electrically driven actuators because it exhibits high elasticity, low initial modulus, and excellent moldability in spite of low dielectric constant. However, further improvement in the characteristics of the PDMS elastomer is not easy due to its chemical non-reactivity. Here, we report a simple method for functionalizing the elastomer by varying content of hydridosilyl groups in PDMS acted as a crosslinker. We synthesized poly(dimethylsiloxane-co-methylvinylsiloxane) (VPDMS) and poly(dimethylsiloxane-co-methylsiloxane) (HPDMS). Tri(ethylene glycol) divinyl ether (TEGDE) as a polar molecule was added to the mixture of VPDMS and HPDMS. TEGDE was reacted to the hydridosilyl group in HPDMS during crosslinking between VPDMS and HPDMS in the presence of platinum as a catalyst. Permittivity of the crosslinked film increased from ca. 25 to 36 pF/m at 10 kHz without a decline in other physical properties such as transparency and elasticity (T > 85%, E ~150 kPa, ɛ ~270%). It depends on the hydridosilyl group content of HPDMS. The chemical introduction of a new molecule into the hydridosilyl group in HPDMS during crosslinking would provide a facile, effective method of modifying the PDMS elastomers.

A Model for Comprehensive Studies of Porosity in Mesoporous Low-K Dielectrics

2002 ◽  
Vol 731 ◽  
Author(s):  
Mihail P. Petkov
Keyword(s):  
Dielectric Constant ◽  
Physical Properties ◽  
Percolation Threshold ◽  
Low Dielectric Constant ◽  
Site Percolation ◽  
Low Dielectric ◽  
Two Generations ◽  
Low K ◽  
Technology Trends ◽  
Porosity Fraction

AbstractThe successful integration of a porous low dielectric constant (k) material as an interlevel dielectric depends on the morphology of the embedded porosity. Simple site percolation models are utilized here to investigate porosity properties of low-kdielectrics with respect to the current technology trends. Significant differences between two generations of porous dielectrics,k< 2.4 andk< 2.1, are found. The porosity fraction in the latter is above the percolation threshold, which may have serious impact on the materials physical properties and its compatibility with production steps.

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