Characterization of PECVD Deposited Fluorosilicate Glass (FSG) After CMP and Cleaning

1996 ◽  
Vol 443 ◽  
Author(s):  
D. Mordo ◽  
I. Goswami ◽  
I. J. Malik ◽  
T. Mallon ◽  
R. Emami ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Removal Rate ◽  
Thermal Desorption Spectroscopy ◽  
Low Dielectric Constant ◽  
Plasma Enhanced Cvd ◽  
Low Dielectric ◽  
Thermal Oxide ◽  
Stabilizing Effect ◽  
Intermetal Dielectric

AbstractA characterization of Plasma-Enhanced CVD Fluorinated Silicate Glass (FSG) is presented. This study investigates the behavior of FSG film in the Chemical Mechanical Polishing (CMP) environment and compares those characteristics to undoped TEOS (UTEOS), Thermal Oxide and Si-Rich oxide capped FSG films. The removal rate, refractive index (RI), surface roughness, contact angle, water content by FTIR and thermal desorption spectroscopy (TDS) were studied.The FSG films are polished ˜ 10% faster than the undoped PECVD oxide films. Their composition was slightly changed after CMP as can be seen by the minor increase in the RI. A layer of Si-Rich oxide (SRO) was found to have a stabilizing effect on the FSG film during CMP and post CMP cleaning operations, and thus can be used in the intermetal dielectric schemes that require low dielectric constant FSG layers.

Material Characterization and Chemical-Mechanical Polishing of Low-Dielectric Constant Fluorinated Silicon Dioxide Films

1996 ◽  
Vol 427 ◽  
Author(s):  
Wei-Tsu Tseng ◽  
Charles C.F. Lin ◽  
Yuan-Tsu Hsieh ◽  
M.-S. Feng
Keyword(s):  
Chemical Mechanical Polishing ◽  
Material Characterization ◽  
Moisture Absorption ◽  
Removal Rate ◽  
Fluorine Content ◽  
Mechanical Polishing ◽  
Low Dielectric Constant ◽  
Bonding Structure ◽  
Low Dielectric ◽  
Fluorinated Oxides

AbstractNanohardness, modulus, and bonding structure of fluorinated silicon dioxides are characterized in order to evaluate their correlations with chemical-mechanical polishing (CM[P) performance. Alkaline-based slurry with adjusted pH is used for polishing in an attempt to delineate the chemical erosion from mechanical abrasion effects during CMIP of fluorinated oxides. The increase in CMIP removal rate and the reduction in refractive index with increasing fluorine content in the fluorinated oxides are related to the change in bonding configuration. The enhanced moisture absorption is due to the presence of fluorine in the oxide network.

Deposition and Characterization of Low-Dielectric-Constant SiOC(-H) Thin Films for Interlayer Dielectrics in Multilevel Interconnections

2007 ◽  
Vol 50 (6) ◽  
pp. 1803 ◽  
Author(s):  
Rangaswamy Navamathavan ◽  
An Soo Jung ◽  
Hyun Seung Kim ◽  
Young Jun Jang ◽  
Chi Kyu Choi ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Interlayer Dielectrics ◽  
Low Dielectric

Pulsed DC Magnetron Sputtered Rutile TiO2 films for next generation DRAM capacitors

2013 ◽  
Vol 1561 ◽  
Author(s):  
M.A Jithin ◽  
Lakshmi Ganapathi Kolla ◽  
Navakanta Bhat ◽  
S. Mohan ◽  
Yuichiro Morozumi ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Low Dielectric Constant ◽  
Si Substrate ◽  
Capacitance Density ◽  
Low Dielectric ◽  
Pulsed Dc ◽  
High Dielectric ◽  
Mim Capacitors

ABSTRACTIn this study, synthesis and characterization of rutile-Titanium dioxide (TiO2) thin films using pulsed DC Magnetron Sputtering at room temperature, along with the fabrication and characterization of MIM capacitors have been discussed. XPS and RBS data show that the films are stoichiometric and have compositional uniformity. The influence of electrode materials on electrical characteristics of the fabricated MIM capacitors has been studied. The Al/TiO2/Al based capacitors show low capacitance density (9 fF/μm2) with low dielectric constant (K=25) and high EOT (3.67 nm) due to low dielectric constant TiO2 phase formation on Al/Si substrate. On the other hand, Ru/TiO2/Ru based capacitors show high capacitance density (49 fF/μm2) with high dielectric constant (K=130) and low EOT (0.7nm) values at high frequency (100 KHz) due to high dielectric constant phase (rutile) formation of TiO2, on Ru/Si substrate. Raman spectra confirm that the films deposited on Ru/Si substrate show the rutile phase.

Characterization of Spin -on Glasses by Microindentation.

1998 ◽  
Vol 511 ◽  
Author(s):  
Eva E. Simonyi ◽  
K.-W. Lee ◽  
Robert F. Cook ◽  
Eric G. Liniger ◽  
James Speidell
Keyword(s):  
Dielectric Constant ◽  
Life Expectancy ◽  
Polymeric Materials ◽  
Curing Temperature ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Bond Density ◽  
Microelectronics Industry ◽  
Preparation Parameter

ABSTRACTSpin-on glasses are candidates in the microelectronics industry as low dielectric constant insulating layers. Spin-on glasses are very brittle materials. This paper discusses measurement problems as relevant to the characterization of a brittle material by the indentation technique. As for all polymeric materials curing temperature is the most important preparation parameter. There is a correlation between hardness, Young's modulus, the onset of cracking with curing temperature. This dependence on curing temperature is also expressed by the change in Si-H bond density as shown by FTIR data. Life expectancy or aging characteristics were also investigated for these features. As an example results on silsesquioxane spin -on glasses are presented.

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