scholarly journals Metal-organic vapor phase epitaxial growth of high-quality ZnO films on Al2O3(00·1)

2001 ◽  
Vol 16 (5) ◽  
pp. 1358-1362 ◽  
Author(s):  
W. I. Park ◽  
S-J. An ◽  
Gyu-Chul Yi ◽  
Hyun M. Jang
Keyword(s):  
Vapor Phase ◽  
Deep Level ◽  
Stimulated Emission ◽  
Zno Films ◽  
High Quality ◽  
Organic Vapor ◽  
Good Crystallinity ◽  
Experimental Parameters ◽  
Metal Organic ◽  
Excitonic Emission

High-quality ZnO thin films were grown epitaxially at 250–550 °C Al2O3(00·1) substrates using low-pressure metalorganic vapor phase epitaxy. The reactants for the growth were diethylzinc and oxygen. Growth temperature, one of the important experimental parameters for epitaxial layers, was optimized. The films grown at 500 °C exhibited good crystallinity and strong ultraviolet absorption and emission. Photoluminescence spectra of the films showed a dominant excitonic emission with a weak deep level emission. More importantly, a strong stimulated emission peak was observed even at room temperature.

A two-step metal organic vapor phase epitaxy growth method for high-quality ZnO on GaN/Al2O3 (0001)

2004 ◽  
Vol 267 (1-2) ◽  
pp. 140-144 ◽  
Author(s):  
A. Dadgar ◽  
N. Oleynik ◽  
D. Forster ◽  
S. Deiter ◽  
H. Witek ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Organic Vapor ◽  
Growth Method ◽  
Metal Organic

scholarly journals Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy

2018 ◽  
Vol 8 (1) ◽  
Author(s):  
Galia Pozina ◽  
Azat R. Gubaydullin ◽  
Maxim I. Mitrofanov ◽  
Mikhail A. Kaliteevski ◽  
Iaroslav V. Levitskii ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Organic Vapor ◽  
Metal Organic

High‐Quality InAs/InSb Nanowire Heterostructures Grown by Metal–Organic Vapor‐Phase Epitaxy

Small ◽  
2008 ◽  
Vol 4 (7) ◽  
pp. 878-882 ◽  
Author(s):  
Philippe Caroff ◽  
Jakob B. Wagner ◽  
Kimberly A. Dick ◽  
Henrik A. Nilsson ◽  
Mattias Jeppsson ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Organic Vapor ◽  
Nanowire Heterostructures ◽  
Metal Organic

High quality GaN grown on silicon(111) using a SixNy interlayer by metal-organic vapor phase epitaxy

2008 ◽  
Vol 92 (19) ◽  
pp. 192111 ◽  
Author(s):  
Kai Cheng ◽  
M. Leys ◽  
S. Degroote ◽  
M. Germain ◽  
G. Borghs
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Organic Vapor ◽  
Metal Organic

Deep Level Formation in Undoped and Oxygen-Doped GaN

2000 ◽  
Vol 639 ◽  
Author(s):  
J. M. Gregie ◽  
R. Y. Korotkov ◽  
B. W. Wessels
Keyword(s):  
Density Functional Theory ◽  
Steady State ◽  
Vapor Phase ◽  
Density Functional ◽  
Deep Level ◽  
Deep Level Defect ◽  
Functional Theory ◽  
Organic Vapor ◽  
Metal Organic ◽  
Formation Energies

ABSTRACTDeep level defects in oxygen doped GaN grown by metal-organic vapor phase epitaxy were investigated. Using steady-state photocapacitance (SSPC) spectroscopy, three deep levels with optical ionization energies of 1.0, 1.4, and 3.25 eV were observed in both nominally undoped and oxygen-doped samples. The total deep level defect concentrations ranged from 6 × 1015 cm-3 in undoped films to 3 × 1016 cm-3 in oxygen-doped films. The concentration of the 3.25 eV level defect increased upon oxygen doping, while the concentrationof the 1.0 and 1.4 eV levels were essentially dopant independent. From the measured concentrations the formation energies of the defects were calculated and compared to energies calculated using density functional theory.

Mg-doped high-quality AlxGa1–xN (x=0-1) grown by high-temperature metal-organic vapor phase epitaxy

2007 ◽  
Vol 4 (7) ◽  
pp. 2502-2505 ◽  
Author(s):  
M. Imura ◽  
N. Kato ◽  
N. Okada ◽  
K. Balakrishnan ◽  
M. Iwaya ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Organic Vapor ◽  
Metal Organic ◽  
Mg Doped
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