Growth Induced Alignment Of The First Neighbor Shell Of CAs In AlxGa1−xAs

1996 ◽  
Vol 442 ◽  
Author(s):  
J. -F. Zheng ◽  
Michael Stavola ◽  
C. R. Abernathy ◽  
S. J. Pearton
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Polarization Dependence ◽  
Absorption Bands ◽  
Vibrational Absorption ◽  
Metalorganic Molecular Beam Epitaxy

AbstractWe have discovered a growth-induced alignment of the Al and Ga first neighbors of CAs, acceptors in AlxGa1−xAs grown by metalorganic molecular beam epitaxy. This growth induced alignment has been detected from the polarization dependence of the C atom's vibrational absorption bands that the alignment gives rise to. The alignment of the first neighbor shell of CAs also gives rise to aligned CAs-H complexes when the C is passivated by H. This leads to polarized H-stretching absorption bands which have also been observed. The growth-induced alignment provides information which helps us to assign the complicated CAsvib rational spectrum observed in the AlxGa1−xAs alloys.

scholarly journals Optical Characterization of Erbium Doped III-Nitrides Prepared by Metalorganic Molecular Beam Epitaxy

1999 ◽  
Vol 4 (S1) ◽  
pp. 952-961 ◽  
Author(s):  
U. Hömmerich ◽  
J. T. Seo ◽  
Myo Thaik ◽  
J. D. MacKenzie ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Radiative Decay ◽  
Thermal Quenching ◽  
Low Oxygen ◽  
Absorption Bands ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Pl Intensity ◽  
Carbon Concentrations

We are currently engaged in a systematic study of the optical properties of Er doped III-nitrides prepared by metalorganic molecular beam epitaxy (MOMBE). Under below-gap excitation it was observed that GaN: Er samples with [O]∼1020 cm−3 and [C]∼1021 cm−3 luminesce at 1540 nm with an intensity of more than two orders of magnitude greater than samples with low oxygen and carbon concentrations (< 1019 cm−3). Associated with the different oxygen and carbon concentrations were different thermal quenching behaviors and below-gap absorption bands. Interestingly, for above-gap excitation only small differences in absolute Er3+ PL intensity and quenching behavior were observed for samples of varying O and C content. Initial lifetime studies were performed and showed a rather unusual short decay time of ∼100 μs at room temperature. In order to gain more insight in the Er3+ PL, a comparison of the integrated PL intensity and lifetime was performed for the temperature range 15-500K. The result reveals that the Er3+ PL quenches above room temperature due to the onset of non-radiative decay and the reduction in excitation efficiency. All samples were also investigated for visible luminescence. Red luminescence was observed from GaN: Er on sapphire substrates under below-gap excitation.

Optical Characterization of Erbium Doped III-Nitrides Prepared by Metalorganic Molecular Beam Epitaxy

1998 ◽  
Vol 537 ◽  
Author(s):  
U. Hommerich ◽  
J. T. Seo ◽  
Myo Thaik ◽  
J. D. MacKenzie ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Radiative Decay ◽  
Thermal Quenching ◽  
Low Oxygen ◽  
Absorption Bands ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Pl Intensity ◽  
Carbon Concentrations

AbstractWe are currently engaged in a systematic study of the optical properties of Er doped III-nitrides prepared by metalorganic molecular beam epitaxy (MOMBE). Under below-gap excitation it was observed that GaN: Er samples with [O]∼1020 cm-3 and [C]∼1021 cm-3 luminesce at 1540 nm with an intensity of more than two orders of magnitude greater than samples with low oxygen and carbon concentrations (< 1019 cm-3). Associated with the different oxygen and carbon concentrations were different thermal quenching behaviors and below-gap absorption bands. Interestingly, for above-gap excitation only small differences in absolute Er3+ PL intensity and quenching behavior were observed for samples of varying 0 and C content. Initial lifetime studies were performed and showed a rather unusual short decay time of ∼100 μts at room temperature. In order to gain more insight in the Er3+ PL, a comparison of the integrated PL intensity and lifetime was performed for the temperature range 15-500K. The result reveals that the Er3+ PL quenches above room temperature due to the onset of non-radiative decay and the reduction in excitation efficiency. All samples were also investigated for visible luminescence. Red luminescence was observed from GaN: Er on sapphire substrates under below-gap excitation.

Metalorganic Molecular Beam Epitaxy of GaAsP for Visible Light-Emitting Devices on Si

1998 ◽  
Vol 535 ◽  
Author(s):  
M. Yoshimoto ◽  
J. Saraie ◽  
T. Yasui ◽  
S. HA ◽  
H. Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Visible Light ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Infrared Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Good Crystallinity ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Pre Treatment

AbstractGaAs1–xPx (0.2 <; x < 0.7) was grown by metalorganic molecular beam epitaxy with a GaP buffer layer on Si for visible light-emitting devices. Insertion of the GaP buffer layer resulted in bright photoluminescence of the GaAsP epilayer. Pre-treatment of the Si substrate to avoid SiC formation was also critical to obtain good crystallinity of GaAsP. Dislocation formation, microstructure and photoluminescence in GaAsP grown layer are described. A GaAsP pn junction fabricated on GaP emitted visible light (˜1.86 eV). An initial GaAsP pn diode fabricated on Si emitted infrared light.

Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy

1989 ◽  
Vol 55 (17) ◽  
pp. 1750-1752 ◽  
Author(s):  
C. R. Abernathy ◽  
S. J. Pearton ◽  
R. Caruso ◽  
F. Ren ◽  
J. Kovalchik
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Metalorganic Molecular Beam Epitaxy

Plasma characteristics and the growth of group III-nitrides by metalorganic molecular beam epitaxy

1997 ◽  
Vol 26 (11) ◽  
pp. 1266-1269 ◽  
Author(s):  
J. D. Mackenzie ◽  
L. Abbaschian ◽  
C. R. Abernathy ◽  
S. M. Donovan ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Group Iii Nitrides ◽  
Group Iii ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Plasma Characteristics

Ar ion laser‐assisted metalorganic molecular beam epitaxy of GaAs

1989 ◽  
Vol 54 (4) ◽  
pp. 335-337 ◽  
Author(s):  
H. Sugiura ◽  
R. Iga ◽  
T. Yamada ◽  
M. Yamaguchi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Ion Laser
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