Mechanism Of Defect Reactions In Semiconductors

1996 ◽  
Vol 442 ◽  
Author(s):  
Yuzo Shinozuka
Keyword(s):  
Symmetry Breaking ◽  
Energy Conversion ◽  
Local Heating ◽  
Lattice Relaxation ◽  
Structural Instability ◽  
Reaction Coordinate ◽  
Relaxation Mode ◽  
Defect Reactions ◽  
Configuration Coordinate ◽  
Configuration Coordinate Diagram

AbstractAn overview is presented on mechanisms of electronically induced (enhanced) defect reactions in semiconductors, which are classified into the local heating, the structural instability, and the recombination enhanced. A mechanism for the annihilation of a hydrogen-carbon complex in silicon is given as an example of the second one. The last two mechanisms can be treated in a unified scheme by using the correct configuration coordinate diagram, which enable us to treat correctly the correlation in successive captures of an electron and a hole. The energy conversion mechanism during the reaction is precisely discussed paying attention to the relation between the lattice relaxation mode and the symmetry breaking reaction coordinate.

Mechanism of Defect Reactions in Semiconductors

2009 ◽  
Vol 1195 ◽  
Author(s):  
Yuzo Shinozuka
Keyword(s):  
Lattice Distortion ◽  
Phonon Frequency ◽  
Lattice Vibration ◽  
Lattice Relaxation ◽  
Structural Instability ◽  
Carrier Injection ◽  
Jahn Teller ◽  
Jahn Teller Effect ◽  
Defect Reactions ◽  
Hole Localization

AbstractProposed mechanisms so far on defect reactions in semiconductors are reexamined. Structural instability of point defects is explained in terms of the Jahn-Teller effect. It is found that the tetrahedral coordinated bonds, which do not have inversion symmetry, are not so rigid as we consider, especially for hole localization. Second topic is the phonon-kick mechanism for defect reactions under carrier injection. In order to discuss this mechanism in detail, we recall the configuration coordinate (c-c) diagram, which is often misunderstood in the literature. The proper relation is explained among the lattice distortion, the position of the electronic level in the band gap (thermal and optical depths), the total energy the multiphonon (e and h) carrier capture processes and the following induced lattice relaxation. A numerical simulation has been performed on phonon kick mechanism. It is found that a rapid increase of the transient lattice vibration around the defect is possible and the probability critically depends on the carrier concentrations and the phonon frequency distribution.

Alternative Mechanism for Defect Generation in a-Si:H

1995 ◽  
Vol 377 ◽  
Author(s):  
David Redfield
Keyword(s):  
Energy Barrier ◽  
Recombination Event ◽  
Reverse Bias ◽  
Defect Formation ◽  
Forward Bias ◽  
Alternative Mechanism ◽  
Defect Centers ◽  
Induced Changes ◽  
Configuration Coordinate ◽  
Configuration Coordinate Diagram

ABSTRACTRecombination-driven mechanisms for defect formation do not account well for several experimental facts, and indeed conflict with some facts. To overcome these problems, an alternative mechanism is proposed in which latent defect centers are converted to metastable defects (dangling bonds) without a recombination event. The transitions are driven simply by electron capture at the center with no energy barrier. A new configuration-coordinate diagram expressing this mechanism includes essential configuration-induced changes in the energies of band edges, and accounts for several other previously problematic observations. This carrier-induced mechanism (CIM) is consistent with defect formation in forward bias and defect inhibition in reverse bias, light-enhanced annealing, as well as the usual light-induced and beam-induced formation. For low orħħωthe process starts by ionization of an existing defect.

A new lattice relaxation mode in InGaAs on GaAs

1995 ◽  
Vol 146 (1-4) ◽  
pp. 489-494 ◽  
Author(s):  
Takuya Fujii ◽  
Susumu Yamazaki
Keyword(s):  
Lattice Relaxation ◽  
Relaxation Mode

Sequential Lattice Relaxation Model within the Double Configuration Coordinate for theDXCenter in AlGaAs

1990 ◽  
Vol 29 (Part 2, No. 4) ◽  
pp. L530-L533 ◽  
Author(s):  
Yasunori Mochizuki ◽  
Masashi Mizuta ◽  
Atsushi Oshiyama
Keyword(s):  
Lattice Relaxation ◽  
Relaxation Model ◽  
Configuration Coordinate

Correlation of the 0.8 eV Emission Band with the EL6 Center in GaAs

1989 ◽  
Vol 163 ◽  
Author(s):  
S. Alaya ◽  
M. A. Zaidi ◽  
G. Marrakchi ◽  
H. Maaref ◽  
H. J. Von Bardeleben ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Temperature Dependence ◽  
Electron Capture ◽  
Emission Band ◽  
Before And After ◽  
Franck Condon ◽  
Configuration Coordinate ◽  
Configuration Coordinate Diagram

AbstractCombined photoluminescence and DLTS investigations of semi-insulating and n-type GaAs before and after a 15min, 850°C heat treatment under AsH3 reveal that the treatment which anneals the EL6 center leads also to a disappearence of the O.8eV PL band. The suggested correlation between EL6 and the O.8eV PL is confirmed by the determination of the electron capture barrier of EL6 and the Franck-Condon shift deduced from the temperature dependence of the PL band leading to a consistant Configuration Coordinate diagram of this defect.

Re-Examination of the Configuration Coordinate Diagram of EL2

1992 ◽  
Vol 83-87 ◽  
pp. 917-922
Author(s):  
D. Goguenheim ◽  
Didier Stiévenard ◽  
Gérard Guillot
Keyword(s):  
Configuration Coordinate ◽  
Configuration Coordinate Diagram
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