Investigation On Subsurface Damage In Silicon Wafers

1996 ◽  
Vol 442 ◽  
Author(s):  
Xin Zhang ◽  
Tong-Yi Zhang ◽  
Yitshak Zohar ◽  
Sanboh Lee
Keyword(s):  
Chemical Etching ◽  
Etch Rate ◽  
Single Crystal Silicon ◽  
Subsurface Damage ◽  
Silicon Wafers ◽  
Machining Processes ◽  
Perfect Single Crystal ◽  
Crystal Silicon ◽  
Micro Raman Spectroscopy ◽  
Chemical Etch

AbstractMicro-Raman spectroscopy and chemical etching were applied to determine the depth of subsurface damage in silicon wafers undergoing different machining processes: cutting, grinding, polishing and lapping. In comparison with the Raman spectrum of perfect single crystal silicon, both the shape and intensity at the shoulder (500 cm−1) and the subpeak (300 cm−1) spectral regions were changed in all the machined wafers. The intensities at shoulder and subpeak gradually decreased and finally resumed to normal, as the depth of the investigated layer increased. According to the chemical etch rate, the depth of the subsurface damage was thus evaluated for the different wafers. TEM observations further confirmed the obtained results.

scholarly journals The Influence of Wire Speed on Phase Transitions and Residual Stress in Single Crystal Silicon Wafers Sawn by Resin Bonded Diamond Wire Saw

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 429
Author(s):  
Tengyun Liu ◽  
Peiqi Ge ◽  
Wenbo Bi
Keyword(s):  
Residual Stress ◽  
Surface Layer ◽  
Phase Transitions ◽  
Single Crystal ◽  
Amorphous Silicon ◽  
Silicon Wafer ◽  
Single Crystal Silicon ◽  
Silicon Wafers ◽  
Crystal Silicon ◽  
Diamond Wire

Lower warp is required for the single crystal silicon wafers sawn by a fixed diamond wire saw with the thinness of a silicon wafer. The residual stress in the surface layer of the silicon wafer is the primary reason for warp, which is generated by the phase transitions, elastic-plastic deformation, and non-uniform distribution of thermal energy during wire sawing. In this paper, an experiment of multi-wire sawing single crystal silicon is carried out, and the Raman spectra technique is used to detect the phase transitions and residual stress in the surface layer of the silicon wafers. Three different wire speeds are used to study the effect of wire speed on phase transition and residual stress of the silicon wafers. The experimental results indicate that amorphous silicon is generated during resin bonded diamond wire sawing, of which the Raman peaks are at 178.9 cm−1 and 468.5 cm−1. The ratio of the amorphous silicon surface area and the surface area of a single crystal silicon, and the depth of amorphous silicon layer increases with the increasing of wire speed. This indicates that more amorphous silicon is generated. There is both compressive stress and tensile stress on the surface layer of the silicon wafer. The residual tensile stress is between 0 and 200 MPa, and the compressive stress is between 0 and 300 MPa for the experimental results of this paper. Moreover, the residual stress increases with the increase of wire speed, indicating more amorphous silicon generated as well.

Influences of Silicon Crystal Anisotropy in Nano-Machining Processes Using AFM

2013 ◽  
Author(s):  
Yachao Wang ◽  
Jing Shi ◽  
Xinnan Wang
Keyword(s):  
Normal Load ◽  
Silicon Crystal ◽  
Single Crystal Silicon ◽  
Transformation Mechanism ◽  
Machining Processes ◽  
Crystal Silicon ◽  
Normal Loading ◽  
Crystal Direction ◽  
Four Levels ◽  
Cutting Mechanisms

Atomic force microscope (AFM) machining has the potential to become an essential technology for manufacturing micro/nano-scale devices. In literature, this technique has been successfully employed to machine various types of materials, including semiconductor materials and metals. However, the effect of material anisotropy in terms of crystal direction is rarely considered in the existing studies. In this paper, we conduct nano-scratching experiments on the (1 0 0) plane of single crystal silicon surface with a diamond tip in an AFM machine. Three levels of crystal direction of nano-scratching are considered. Four levels of normal loading are applied. Machining performances are mainly evaluated by the groove morphology. Also, the wear coefficients and scratch ratio are calculated to the anti-wear performance. Based on the pile up volume and cutting volume respectively, the presence of the ploughing and cutting mechanisms is determined. The experiment results indicate that the applied normal load significantly affect the groove depth and debris morphology. The scratching direction has a pronounced effect on the friction coefficient and the calculated scratching hardness. By observing the debris morphology and cracks formation, the dependence of ductile to brittle transformation mechanism of silicon machining on the crystal direction is also discussed.

scholarly journals Проблемы при использовании травителя KOH-IPA для текстурирования кремниевых пластин

2020 ◽  
Vol 90 (10) ◽  
pp. 1758
Author(s):  
Н.А. Чучвага ◽  
Н.М. Кислякова ◽  
Н.С. Токмолдин ◽  
Б.А. Ракыметов ◽  
А.С. Серикканов
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Main Type ◽  
Single Crystal Silicon ◽  
Silicon Wafers ◽  
Optimal Parameters ◽  
Crystal Silicon ◽  
High Efficiency Solar Cells ◽  
Wet Chemical ◽  
Manufacturing Techniques

The wet chemical treatment of monocrystalline silicon wafers, said method comprising texturing, represents one of the fundamental steps of manufacturing techniques of high-efficiency solar cells. As part of this work, methods for texturing single-crystal silicon wafers for solar cells were studied.As a result of studies, the optimal parameters of texturing technology for the studied samples were determined. The main type of etchant for texturing processes, which is a solution of KOH with isopropanol, is also determined.

The Use of Energy Dispersive Diffractometry to Measure the Thickness of Metal and Glass Thin Films

1981 ◽  
Vol 25 ◽  
pp. 365-371
Author(s):  
Glen A. Stone
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Substrate Material ◽  
Silicon Wafers ◽  
Energy Dispersive ◽  
Crystal Silicon ◽  
X Ray ◽  
Phosphosilicate Glass ◽  
Film Substrate

This paper presents a new method to measure the thickness of very thin films on a substrate material using energy dispersive x-ray diffractometry. The method can be used for many film-substrate combinations. The specific application to be presented is the measurement of phosphosilicate glass films on single crystal silicon wafers.

Electrodeposition of nanometer-thick epitaxial films of silver onto single-crystal silicon wafers

2019 ◽  
Vol 7 (6) ◽  
pp. 1720-1725 ◽  
Author(s):  
Qingzhi Chen ◽  
Jay A. Switzer
Keyword(s):  
Single Crystal ◽  
Electrochemical Method ◽  
Single Crystal Silicon ◽  
Epitaxial Films ◽  
Silicon Wafers ◽  
Silver Acetate ◽  
Crystal Silicon ◽  
Silver Films ◽  
First Time

Silver films were deposited epitaxially for the first time onto low-index, single-crystal silicon wafers through an electrochemical method in an aqueous silver acetate bath.

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