scholarly journals Real-time Characterization of the Optical Properties of an ultra-thin Surface Reaction Layer during Growth

1996 ◽  
Vol 441 ◽  
Author(s):  
N. Dietz ◽  
N. Sukidib ◽  
C. Harrisb ◽  
K. J. Bachmann
Keyword(s):  
Optical Properties ◽  
Fine Structure ◽  
Reaction Layer ◽  
Surface Reaction ◽  
Turning Points ◽  
Growth Conditions ◽  
Chemical Beam Epitaxy ◽  
Modulated Phase ◽  
Interference Oscillations

AbstractThe average optical properties of an ultra-thin surface reaction layer (SRL) during growth by pulsed chemical beam epitaxy (PCBE) can be quantitatively accessed by p-polarized reflectance spectroscopy (PRS), as demonstrated on the example of heteroepitaxial GaP growth. Under PCBE growth conditions, the surface of the substrate is exposed to pulsed ballistic beams of tertiarybutyl phosphine [TBP, (C4H9)PH2] and triethylgallium [TEG, Ga(C2H5)3]. The pulsed precursor supply causes a period in composition and thickness modulated SRL, monitored as a fine structure that is superimposed on interference oscillations, resulting from back reflection at the substratelayer interface with increasing layer thickness. The amplitude of this fine structure undergoes a period amplitude modulation and exhibits turning points at which the response to the first precursor pulse changes sign. The turning points can be characterized by the expression R4(Φmax)=R4(Φmin), which describes the maximal and minimal values of the temporally modulated phase factor in the SRL, using a four layer stack description. The positions of these turning points are not affected by the thickness of the SRL, which allows the computation of the average complex dielectric function of the SRL independent of its thickness. In the next step, the average thickness of the SRL can be extracted from the amplitude of the observed fine structure.

Optical and X-Ray Diffraction Characterization of MBE-Grown InGaAs, InAlAs and InGaAIAs on InP

1994 ◽  
Vol 340 ◽  
Author(s):  
Z. C. Feng ◽  
S. J. Chua ◽  
A. Raman ◽  
N.N. Lim
Keyword(s):  
Optical Properties ◽  
Fourier Transform ◽  
Molecular Beam ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Lattice Matched ◽  
Comprehensive Characterization

ABSTRACTA variety of Inl-xGaxAs, Inl-yAlyAs and Inl-x-yGaxAlyAs films have been grown on InP by molecular beam epitaxy. A comprehensive characterization was performed using Raman scattering, photoluminescence (PL), Fourier transform infrared (FTIR) spectroscopy and double crystal X-ray diffraction on these ternary and quaternary heterostructures with different compositions and growth conditions. The lattice matched and mismatched structures are studied. Our analyses show that the interface mismatch exerts an important influence on the optical properties of these heterostructures, and conversely that Raman, PL and FTIR can be used to probe the interface mismatch nondestructively.

Multilevel Approaches Toward Monitoring and Control of Semiconductor Epitaxy

1996 ◽  
Vol 448 ◽  
Author(s):  
D. E. Aspnes ◽  
N. Dietz ◽  
U. Rossow ◽  
K. J. Bachmann
Keyword(s):  
Optical Properties ◽  
Real Time ◽  
Reaction Layer ◽  
Surface Reaction ◽  
Surface Region ◽  
Monitoring And Control ◽  
Time Analysis ◽  
Near Surface ◽  
Real Time Analysis ◽  
And Control

AbstractVarious optical techniques have been developed over the last few years to allow real-time analysis of regions of importance for semiconductor epitaxy, in particular the unreacted and reacted parts of the surface reaction layer (SRL) and the near-surface region of the sample. When coupled with emerging microscopic methods of calculating optical properties, these approaches will allow several levels of control beyond that which has been currently demonstrated.

Real-time Optical Monitoring of Epitaxial Growth Processes by p-Polarized Reflectance Spectroscopy

1995 ◽  
Vol 406 ◽  
Author(s):  
Nikolaus Dietz ◽  
Klaus J. Bachmannb
Keyword(s):  
Fine Structure ◽  
Epitaxial Growth ◽  
Real Time ◽  
Dielectric Function ◽  
Reaction Layer ◽  
Surface Reaction ◽  
Optical Probe ◽  
Reflectance Spectroscopy ◽  
Growth Processes ◽  
Polarized Reflectance

AbstractIn this paper we introduce a real-time optical probe technique, p-polarized reflectance spectroscopy (PRS), for the monitoring of epitaxial growth processes. GaP heteroepitaxy by pulsed chemical beam epitaxy (PCBE) is used as an example. PRS allows to follow the deposition process with submonolayer resolution, utilizing a fine structure that is superimposed to the interference oscillations in the reflected intensity. This fine structure is explained by the periodic alteration of the surface reaction chemistry under pulsed chemical precursor supply. In the case of epitaxial GaP growth, it is modeled for a four layer stack, including an ultra-thin surface reaction layer of periodically changing thickness do(t) and dielectric function εo(t) tied to the periodic surface exposure to tertiarybutyl phosphine (TBP) and triethylgallium (TEG) pulses, respectively. The imaginary part of the dielectric function, εO2, of this surface reaction layer can be determined directly from the distance of the inflection points in the fine structure, where the optical response to the first precursor pulse in the cycle sequence changes sign, from the closests interference minimum. The surface reaction kinetics can be studied by analyzing the decay time characteristic in the transients of the fine structure.

CHARACTERIZATION OF NANOMETRIC QUANTUM WELLS IN SEMICONDUCTOR HETEROSTRUCTURES BY OPTICAL SPECTROSCOPY

2004 ◽  
Vol 18 (12) ◽  
pp. 1743-1758 ◽  
Author(s):  
E. LAURETO ◽  
A. R. VASCONCELLOS ◽  
E. A. MENESES ◽  
R. LUZZI
Keyword(s):  
Surface Roughness ◽  
Optical Properties ◽  
Quantum Wells ◽  
Growth Conditions ◽  
Anomalous Behavior ◽  
Semiconductor Heterostructures ◽  
Mechanical Formalism ◽  
Statistical Mechanical ◽  
Fractal Characteristics

Quantum wells with fractal-like interfaces arise in the growth of semiconductor heterostructures. Such fractal characteristics largely influence the optical and transport properties in these constrained geometries. We report a systematic study of growth through the study of optical properties. The spectra obtained show "anomalous behavior", whose characteristics depends on the growth procedure. The theoretical analysis was performed resorting to an unconventional statistical-mechanical formalism. It allows one to correlate growth conditions with surface roughness, and to determine their influence on experimental results, allowing one to obtain a picture of the physics involved in such systems.

Real-time Optical Monitoring of GaxIn1−xP/GaP Heterostructures on Silicon

1995 ◽  
Vol 406 ◽  
Author(s):  
N. Dietz ◽  
U. Rossow ◽  
D. E. Aspnes ◽  
N. Sukidi ◽  
K. J. Bachmann
Keyword(s):  
Fine Structure ◽  
Surface Reaction ◽  
Laser Light ◽  
Amplitude Ratio ◽  
Reflectance Spectroscopy ◽  
Chemical Beam Epitaxy ◽  
Optical Monitoring ◽  
Difference Spectroscopy ◽  
Combined Application ◽  
Reflectance Difference Spectroscopy

AbstractIn this paper we report the combined application of p-polarized reflectance spectroscopy (PRS), reflectance difference spectroscopy (RDS), and laser light scattering (LLS) to investigate the heteroepitaxy of GaxIn 1−xP/GaP on Si by pulsed chemical beam epitaxy (PCBE) with tertiarybutylphosphine (TBP), triethylgallium (TEG), and trimethylindium (TMI) precursors. Both, PRS and RDS follow the growth process with submonolayer resolution utilizing a periodic fine structure signal, which is caused by a periodic alteration of thickness and composition of an ultra-thin surface reaction layer during the periodic TEG and TBP exposure of the surface. After the transition from GaP growth to GaxIn 1−xP growth, the RDS oscillations are reoriented after about five precursor cycles in a new oscillation periodicity, where the response to the TBP pulse has the opposite direction. The ratio of the changes in the amplitudes of RDS signals as a response to TEG and TMI surface exposure is used to estimate the composition fo GaxIn 1−xP. The PRS fine structure is maintained after switching to GaxIn 1−xP growth with a separate feature for each TEG and TMI surface exposure. The amplitude ratio of these features changes during growth.

Characterization of Wear and Surface Reaction Layer Formation on Aerospace Bearing Steel M50 and a Nitrogen-alloyed Stainless Steel

2006 ◽  
Vol 3 (2) ◽  
pp. 14055
Author(s):  
S Peissl ◽  
H Leitner ◽  
R Ebner ◽  
H Hutter ◽  
D Krecar ◽  
...  
Keyword(s):  
Stainless Steel ◽  
Reaction Layer ◽  
Surface Reaction ◽  
Bearing Steel ◽  
Layer Formation

Growth and Characterization of SiOx nanowires by VLS and SLS growth mechanism

2004 ◽  
Vol 832 ◽  
Author(s):  
Dae-Ho Rho ◽  
Jae-Soo Kim ◽  
Dong-Jin Byun ◽  
Jae-Woong Yang ◽  
Jae-Hoon Lee ◽  
...  
Keyword(s):  
Optical Properties ◽  
Growth Mechanism ◽  
Growth Conditions ◽  
Blue Luminescence ◽  
Vapor Liquid Solid ◽  
Evaporation Method ◽  
Oxygen Defects ◽  
Different Shapes ◽  
Vapor Liquid

ABSTRCT:SiOx nanowire were synthesized using VLS (vapor-liquid-solid) and SLS (ssolid-liquid-solid) growth mechanism. Grown nanowires had a different shapes by the kind of substrates and kind of catalysts. Diameters and lengths of grown nanowires were varied with growth conditions. By vapor evaporation method, used substrates effected growth scheme and density of nanowires because of differences of catalyst nucleation characteristics. Grown nanowires showed different microstructures and optical properties. By catalyst evaporation method, various shapes of SiOx nanowires were grown. These shapes of nanowire were formed by the typical reaction of catalyst and Si source. Measured optical properties show blue luminescence about 430nm because of oxygen defects in the nannowire.

scholarly journals Optical and Microstructural Characterization of Thin Layers

Crystals ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 749
Author(s):  
Łukasz Skowroński
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Microstructural Characterization ◽  
Growth Conditions ◽  
Thin Layers ◽  
Special Issue

The microstructure and optical properties of layers strongly depend on the method of synthesis. This Special Issue on “Optical and Microstructural Characterization of Thin Layers” is a collection of papers on the relationships between the growth conditions and specific properties of thin films.

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