Formation and Phase Transformation of R. F. Sputter Deposited NON-BCC 6-A15 Chromium Thin Films

1996 ◽  
Vol 441 ◽  
Author(s):  
J. P. Chu ◽  
J. W. Chang ◽  
P. Y. Lee ◽  
J. K. Wu
Keyword(s):  
Thin Films ◽  
Phase Transformation ◽  
Processing Parameters ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
Working Pressure ◽  
Annealing Study ◽  
First Order Transition ◽  
Sputter Deposited ◽  
First Time

AbstractFormation and phase transformation of non-BCC δ-A15 Cr thin films prepared by R. F. magnetron sputtering have been characterized. Processing parameters such as working pressure, deposition time and temperature were found to affect the formation of δ-A15 Cr films. Using differential scanning calorimetry, we have demonstrated for the first time that the phase transformation of the δ-A15 Cr phase to the equilibrium c-BCC Cr phase is an irreversible, exothermic, first-order transition. At a heating rate of 10°C/min, the onset and peak temperatures of transformation were determined to be 428°C and 437°C, respectively. Our post-deposition annealing study by X-ray diffraction further verified the occurrence of transformation.

TEM studies of solid-state reactions in sputter-deposited Nb/Al multilayer thin films

1996 ◽  
Vol 54 ◽  
pp. 1020-1021
Author(s):  
F. Ma ◽  
S. Vivekanand ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Stoichiometric Composition ◽  
Analytical Electron Microscopy ◽  
Grain Structure ◽  
Solid State Reactions ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputter Deposited

Solid state reactions in sputter-deposited Nb/Al multilayer thin films have been studied by transmission and analytical electron microscopy (TEM/AEM), differential scanning calorimetry (DSC) and X-ray diffraction (XRD). The Nb/Al multilayer thin films for TEM studies were sputter-deposited on (1102)sapphire substrates. The periodicity of the films is in the range 10-500 nm. The overall composition of the films are 1/3, 2/1, and 3/1 Nb/Al, corresponding to the stoichiometric composition of the three intermetallic phases in this system.Figure 1 is a TEM micrograph of an as-deposited film with periodicity A = dA1 + dNb = 72 nm, where d's are layer thicknesses. The polycrystalline nature of the Al and Nb layers with their columnar grain structure is evident in the figure. Both Nb and Al layers exhibit crystallographic texture, with the electron diffraction pattern for this film showing stronger diffraction spots in the direction normal to the multilayer. The X-ray diffraction patterns of all films are dominated by the Al(l 11) and Nb(l 10) peaks and show a merging of these two peaks with decreasing periodicity.

scholarly journals A novel and potentially scalable CVD-based route towards SnO2:Mo thin films as transparent conducting oxides

2021 ◽  
Author(s):  
Tianlei Ma ◽  
Marek Nikiel ◽  
Andrew G. Thomas ◽  
Mohamed Missous ◽  
David J. Lewis
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Mixed Valence ◽  
Chemical Vapour ◽  
X Ray Diffraction ◽  
X Ray ◽  
Conducting Oxides ◽  
Valence States ◽  
3 Omega ◽  
First Time

AbstractIn this report, we prepared transparent and conducting undoped and molybdenum-doped tin oxide (Mo–SnO2) thin films by aerosol-assisted chemical vapour deposition (AACVD). The relationship between the precursor concentration in the feed and in the resulting films was studied by energy-dispersive X-ray spectroscopy, suggesting that the efficiency of doping is quantitative and that this method could potentially impart exquisite control over dopant levels. All SnO2 films were in tetragonal structure as confirmed by powder X-ray diffraction measurements. X-ray photoelectron spectroscopy characterisation indicated for the first time that Mo ions were in mixed valence states of Mo(VI) and Mo(V) on the surface. Incorporation of Mo6+ resulted in the lowest resistivity of $$7.3 \times 10^{{ - 3}} \Omega \,{\text{cm}}$$ 7.3 × 10 - 3 Ω cm , compared to pure SnO2 films with resistivities of $$4.3\left( 0 \right) \times 10^{{ - 2}} \Omega \,{\text{cm}}$$ 4.3 0 × 10 - 2 Ω cm . Meanwhile, a high transmittance of 83% in the visible light range was also acquired. This work presents a comprehensive investigation into impact of Mo doping on SnO2 films synthesised by AACVD for the first time and establishes the potential for scalable deposition of SnO2:Mo thin films in TCO manufacturing. Graphical abstract

scholarly journals Reactive Dual Magnetron Sputtering: A Fast Method for Preparing Stoichiometric Microcrystalline ZnWO4 Thin Films

Surfaces ◽  
2021 ◽  
Vol 4 (2) ◽  
pp. 106-114
Author(s):  
Yannick Hermans ◽  
Faraz Mehmood ◽  
Kerstin Lakus-Wollny ◽  
Jan P. Hofmann ◽  
Thomas Mayer ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Fast Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Post Annealing ◽  
Rf Signal ◽  
First Time

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.

Characterization of SrBi2Nb2O9 Thin Films Prepared by Sol Gel Technique

1996 ◽  
Vol 459 ◽  
Author(s):  
E. Ching-Prado ◽  
W. Pérez ◽  
A. Reynés-Figueroa ◽  
R. S. Katiyar ◽  
D. Ravichandran ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Band ◽  
Sol Gel ◽  
Orthorhombic Symmetry ◽  
X Ray Diffraction ◽  
Ft Ir ◽  
Gel Technique ◽  
High Degree ◽  
First Time

ABSTRACTThin films of SrBi2Nb2O9 (SBN) with thicknesses of 0.1, 0.2, and 0.4 μ were grown by Sol-gel technique on silicon, and annealed at 650°C. The SBN films were investigated by Raman scatering for the first time. Raman spectra in some of the samples present bands around 60, 167, 196, 222, 302, 451, 560, 771, 837, and 863 cm−1, which correspond to the SBN formation. The study indicates that the films are inhomogeneous, and only in samples with thicknesses 0.4 μ the SBN material was found in some places. The prominent Raman band around 870 cm−1, which is the A1g mode of the orthorhombic symmetry, is assigned to the symmetric stretching of the NbO6 octahedrals. The frequency of this band is found to shift in different places in the same sample, as well as from sample to sample. The frequency shifts and the width of the Raman bands are discussed in term of ions in non-equilibrium positions. FT-IR spectra reveal a sharp peak at 1260 cm−1, and two broad bands around 995 and 772 cm−1. The bandwidths of the latter two bands are believed to be associated with the presence of a high degree of defects in the films. The experimental results of the SBN films are compared with those obtained in SBT (T=Ta) films. X-ray diffraction and SEM techniques are also used for the structural characterization.

Study on Structural Properties of Gallium and Titanium Doped Zinc Oxide Films Deposited by Magnetron Sputtering

2014 ◽  
Vol 908 ◽  
pp. 124-128 ◽  
Author(s):  
S.B. Chen ◽  
Z.Y. Zhong
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Crystal Structures ◽  
X Ray Diffraction ◽  
Hexagonal Crystal ◽  
Working Pressure ◽  
Sintered Ceramic ◽  
Glass Substrates ◽  
Zinc Oxide Films

Thin films of transparent conducting gallium and titanium doped zinc oxide (GTZO) were prepared on glass substrates by magnetron sputtering technique using a sintered ceramic target. The microstructural properties of the deposited thin films were characterized with X-ray diffraction (XRD). The results demonstrated that the polycrystalline GTZO thin films consist of the hexagonal crystal structures with c-axis as the preferred growth orientation normal to the substrate, and that the working pressure significantly affects the crystal structures of the thin films. The GTZO thin film deposited at the working pressure of 0.4 Pa has the best crystallinity, the largest grain size and the lowest stress.

scholarly journals Nanocrystal, phase transformation and microstructure of Ni50Ti50 shape memory alloy

2018 ◽  
Vol 24 (02) ◽  
pp. 22-25
Author(s):  
Dovchinvanchig M ◽  
Chunwang Zhao
Keyword(s):  
Differential Scanning Calorimetry ◽  
Phase Transformation ◽  
Shape Memory Alloy ◽  
Shape Memory ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
X Ray ◽  
One Step ◽  
Niti Matrix ◽  
Electronic Microscope

The nanocrystal, phase transformation and microstructure behavior of Ni50Ti50 shape memory alloy was investigated by scanning electronic microscope, X-ray diffraction and differential scanning calorimetry. The results showed that the microstructure of Ni-Ti binary alloy consists of the NiTi2 phase and the NiTi matrix phase. One-step phase transformation was observed alloy.

Paramagnetic-to-antiferromagnetic phase transformation in sputter-deposited Ni-Mn thin films

2003 ◽  
Vol 32 (11) ◽  
pp. 1155-1159 ◽  
Author(s):  
Peter F. Ladwig ◽  
Ying Yang ◽  
Ling Ding ◽  
I-Fei Tsu ◽  
Y. Austin Chang
Keyword(s):  
Thin Films ◽  
Phase Transformation ◽  
Antiferromagnetic Phase ◽  
Sputter Deposited

Structure and properties of poly(3-hydroxybutyrate-co-3-hydroxyhexanoate)/poly(L-lactic acid) quasi core/sheath melt-electrospun microfibers

2018 ◽  
Vol 89 (9) ◽  
pp. 1770-1781 ◽  
Author(s):  
Huaizhong Xu ◽  
Benedict Bauer ◽  
Masaki Yamamoto ◽  
Hideki Yamane
Keyword(s):  
Mechanical Properties ◽  
Tensile Strength ◽  
Lactic Acid ◽  
Tensile Tests ◽  
Processing Parameters ◽  
Structure And Properties ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
X Ray ◽  
Diffraction Patterns

A facile route was proposed to fabricate core–sheath microfibers, and the relationships among processing parameters, crystalline structures and the mechanical properties were investigated. The compression molded poly(3-hydroxybutyrate-co-3-hydroxyhexanoate) (PHBH)/poly(L-lactic acid) (PLLA) strip enhanced the spinnability of PHBH and the mechanical properties of PLLA as well. The core–sheath ratio of the fibers was determined by the prefab strip, while the PLLA sheath component did not completely cover the PHBH core component due to the weak interfacial tension between the melts of PHBH and PLLA. A rotational target was applied to collect aligned fibers, which were further drawn in a water bath. The tensile strength and the modulus of as-spun and drawn fibers increased with increasing the take-up velocities. When the take-up velocity was above 500 m/min, the jet became unstable and started to break up at the tip of the Taylor cone, decreasing the mechanical properties of the fibers. The drawing process facilitated the crystallization of PLLA and PHBH, and the tensile strength and the modulus increased linearly with the increasing the draw ratio. The crystal information displayed from wide-angle X-ray diffraction patterns and differential scanning calorimetry heating curves supported the results of the tensile tests.

Electrical Transport and In-Situ X-Ray Studies of the Formation of TiSi2 Thin Films on Si

1986 ◽  
Vol 77 ◽  
Author(s):  
J. C. Hensel ◽  
J. M. Vandenberg ◽  
L. F. Mattheiss ◽  
F. C. Unterwald ◽  
A. Maury
Keyword(s):  
Thin Films ◽  
Electrical Transport ◽  
Structural Phase ◽  
X Ray Diffraction ◽  
Metallic Behavior ◽  
Distinctive Features ◽  
X Ray ◽  
Total Energies ◽  
Sputter Deposited

ABSTRACTThe formation of TiSi2 thin films on Si has been investigated by in situ x-ray diffraction and by electrical transport. The x-ray results show unequivocally that the staging proceeds through two orthorhombic polytypes of TiSi2 according to the sequence: sputter-deposited metallic Ti films on Si (001) → TiSi2 (C49 structure) → TiSi2 (C54 structure), with no evidence of lower suicides. Electrical transport shows metallic behavior for all phases and distinctive features in the annealing curves which correlate with the structural transformations. Most importantly, the resistivity, characteristically very high for the C49 phase, undergoes a precipitous drop at the C49 → C54 transition. Total energies for both phases are calculated and, consistent with the occurrence of a structural phase transformation, are found not to differ appreciably.

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