Ion Beam Synthesis of Buried CoSi2 Layers in SiGe Alloys

1992 ◽  
Vol 279 ◽  
Author(s):  
R. Jebasinski ◽  
S. Mantl ◽  
Chr. Dieker ◽  
H. Dederichs ◽  
L. Vescan ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Implantation ◽  
Single Crystal ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Channeling ◽  
Transmission Electron

ABSTRACTSynthesis of buried, epitaxial CoSi2 layers in Si1−xGex alloys (x =0.48 and x = 0.09) by 100 and 150 keV Co+ ion implantation and subsequent rapid thermal annealing was studied by X-Ray diffraction, Rutherford backscattering spectroscopy, He ion channeling, Auger Eectron Spectroscopy and Transmission Electron Microscopy. Buried single-crystal CoSi2 layers in the Si0.91Ge0.09 alloy containing ≈ 1 at% Ge were formed. The suicide formation causes an outdiffusion of Ge leading to an increase in the Ge concentration of the adjacent SiGe layers. In contrast, in the Si0.52Ge0.48 alloy no buried suicide layers could be produced.

Determination of Dislocation Densities in Hexagonal Close-Packed Metals using X-Ray Diffraction and Transmission Electron Microscopy

1991 ◽  
Vol 35 (A) ◽  
pp. 593-599 ◽  
Author(s):  
M. Griffiths ◽  
J.E. Winegar ◽  
J.F. Mecke ◽  
R.A. Holt
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Single Crystal ◽  
Plastic Anisotropy ◽  
Zirconium Alloys ◽  
X Ray Diffraction ◽  
X Ray ◽  
Hexagonal Close Packed ◽  
Transmission Electron ◽  
Dislocation Densities

AbstractX-ray diffraction (XRD) line-broadening analysis has been used to determine dislocation densities in zirconium alloys with hexagonal closepacked (hep) crystal structures and a complex distribution of dislocations reflecting the plastic, anisotropy of the material. The validity of the technique has been assessed by comparison with direct measurements of dislocation densities in deformed polycrystalline and neutron-irradiated single crystal material using transmission electron microscopy (TEM). The results show that-there is good agreement between the XRD and TEM for measurements on the deformed material whereas there is a large discrepancy for measurements on the irradiated single crystal; the XRD measurements significantly underestimating the TEM observations.

Room Temperature Synthesis of Cu2O Nanospheres: Optical Properties and Thermal Behavior

2014 ◽  
Vol 21 (1) ◽  
pp. 108-119 ◽  
Author(s):  
Daniela Nunes ◽  
Lídia Santos ◽  
Paulo Duarte ◽  
Ana Pimentel ◽  
Joana V. Pinto ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Thermal Behavior ◽  
Room Temperature ◽  
Diffuse Reflectance Spectroscopy ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
X Ray ◽  
Transmission Electron

AbstractThe present work reports a simple and easy wet chemistry synthesis of cuprous oxide (Cu2O) nanospheres at room temperature without surfactants and using different precursors. Structural characterization was carried out by X-ray diffraction, transmission electron microscopy, and scanning electron microscopy coupled with focused ion beam and energy-dispersive X-ray spectroscopy. The optical band gaps were determined from diffuse reflectance spectroscopy. The photoluminescence behavior of the as-synthesized nanospheres showed significant differences depending on the precursors used. The Cu2O nanospheres were constituted by aggregates of nanocrystals, in which an on/off emission behavior of each individual nanocrystal was identified during transmission electron microscopy observations. The thermal behavior of the Cu2O nanospheres was investigated with in situ X-ray diffraction and differential scanning calorimetry experiments. Remarkable structural differences were observed for the nanospheres annealed in air, which turned into hollow spherical structures surrounded by outsized nanocrystals.

Characterization of ballistically deformed tungsten [100]-, [111]-, and [110]-oriented single crystal penetrators by optical metallography, x-ray diffraction and transmission electron microscopy

2004 ◽  
Vol 19 (12) ◽  
pp. 3451-3462
Author(s):  
R.A. Herring ◽  
W.J. Bruchey ◽  
P.W. Kingman
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Single Crystal ◽  
Energy Efficient ◽  
Optical Metallography ◽  
Alternative Mechanism ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Wavy Cavity

Single-crystal penetrators of tungsten having orientations of [100], [111], and [110] were ballistically deformed into targets of standard armor material and characterized by optical metallography, x-ray diffraction, and transmission electron microscopy (TEM) methods, which showed significant differences in their deformation mechanisms and microstructures corresponding to their deformation performance as measured by the penetration of the target. The [100] single-crystal penetrator, which produced the most energy efficient deformation, provided a new, alternative mechanism for ballistic deformation by forming small single-crystal blocks, defined by {100} oriented cracks, which rotated during extrusion from the interior to the side of the penetrator while maintaining their single crystal integrity. The [111] single-crystal penetrator transferred mass along allowed, high-angle deformation planes to the penetrator’s side where a buildup of mass mushroomed the tip until the built-up mass let go along the sides of the penetrator, creating a wavy cavity. The [110] penetrator, which produced the least energy-efficient deformation, has only two allowed deformation planes, cracked and rotated to invoke other deformation planes.

scholarly journals Structure refinement of the δ1pphase in the Fe–Zn system by single-crystal X-ray diffraction combined with scanning transmission electron microscopy

2014 ◽  
Vol 70 (2) ◽  
pp. 275-282 ◽  
Author(s):  
Norihiko L. Okamoto ◽  
Katsushi Tanaka ◽  
Akira Yasuhara ◽  
Haruyuki Inui
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Single Crystal ◽  
Scanning Transmission Electron Microscopy ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission

The structure of the δ1pphase in the iron−zinc system has been refined by single-crystal synchrotron X-ray diffraction combined with scanning transmission electron microscopy. The large hexagonal unit cell of the δ1pphase with the space group ofP63/mmccomprises more or less regular (normal) Zn12icosahedra, disordered Zn12icosahedra, Zn16icosioctahedra and dangling Zn atoms that do not constitute any polyhedra. The unit cell contains 52 Fe and 504 Zn atoms so that the compound is expressed with the chemical formula of Fe13Zn126. All Fe atoms exclusively occupy the centre of normal and disordered icosahedra. Iron-centred normal icosahedra are linked to one another by face- and vertex-sharing forming two types of basal slabs, which are bridged with each other by face-sharing with icosioctahedra, whereas disordered icosahedra with positional disorder at their vertex sites are isolated from other polyhedra. The bonding features in the δ1pphase are discussed in comparison with those in the Γ and ζ phases in the iron−zinc system.

Metal Bonding in SiC Based Substrates

2005 ◽  
Vol 483-485 ◽  
pp. 781-784 ◽  
Author(s):  
Igor Matko ◽  
Bernard Chenevier ◽  
Roland Madar ◽  
H. Roussel ◽  
Stephane Coindeau ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Single Crystal ◽  
Structure Evolution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Metal Bonding ◽  
Silicide Layer ◽  
Transmission Electron ◽  
Single Crystal Sic

QuaSiC TM substrates can be obtained by transferring a single crystal SiC layer onto a poly SiC substrate using the Smart Cut TM technology. The structure evolution of metal bonding (W-Si silicide) layer has been investigated by Transmission Electron Microscopy and X-ray diffraction. Results indicate that the metal bonding film is made of W5Si3. The film is discontinuous and strained. Annealing releases stress at least partially.

Orientation Relationships between BCC Deposits and FCC Substrates

1987 ◽  
Vol 94 ◽  
Author(s):  
David A. Smith ◽  
Armin Segmüller ◽  
A. R. Taranko
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Single Crystal ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
Orientation Relationships ◽  
X Ray ◽  
Bcc Metals ◽  
Transmission Electron ◽  
Deposited Films

ABSTRACTOriented deposits are commonplace in vapor deposited films. The origins of this behavior are not always clear. Various bcc metals (Fe, Nb, Mo, Ta, Cr) have been deposited onto single crystal fcc substrates (Au, Ni, MgO, Si, NaCI) which were selected with the intention of varying the character of the substrate-deposit interaction. The resulting structures have been characterized by transmission electron microscopy and grazing incidence x-ray diffraction. The observed variants of the cube-cube and Nishiyama-Wassermann orientation relationship can be understood in terms of minimization of misfit except when there is a weak interaction between substrate and deposit.

Sodium Nitrate Assisted Hydrothermal Synthesis of Na0.5Bi0.5TiO3 Nanoflakes

2012 ◽  
Vol 463-464 ◽  
pp. 777-780 ◽  
Author(s):  
Lin Lin Yang ◽  
Yong Gang Wang ◽  
Yu Jiang Wang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Hydrothermal Synthesis ◽  
Single Crystal ◽  
Hydrothermal Method ◽  
Sodium Nitrate ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

Single-crystal Na0.5Bi0.5TiO3 nanoflakes have been successfully synthesized at 160°C with 8M NaOH by a hydrothermal method assisted by sodium nitrate. The as-prepared samples were characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The presence of sodium nitrate was found to play an important role in the growth of single-crystal Na0.5Bi0.5TiO3 nanoflakes.

Formation of Single Crystal Nanowires of GaN on the Si Substrates

2005 ◽  
Vol 475-479 ◽  
pp. 4175-4178 ◽  
Author(s):  
Cheng Shan Xue ◽  
Zhi Hua Dong ◽  
Hui Zhao Zhuang ◽  
Haiyong Gao ◽  
Yi'an Liu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Single Crystal ◽  
Photoelectron Spectroscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron ◽  
Scanning Electron ◽  
Sputtering System

An extreme thin SiC buffer and Ga2O3 layer were deposited on silicon substrate sequentially with a r.f. magnetron sputtering system. Then the sample was annealed in the ambiance of ammonia at high temperature. Nanowires were found when the sample was tested with scanning electron microscopy (SEM). The composition of the nanowires is found to be GaN when the sample was tested with X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). A nanowire was observed with transmission electron microscopy and it was even and uniform, with diameter of about 60nm. And the nanowire can be testified of wurtzite single crystal structure by electron diffraction (ED) analysis attached to the TEM. The high-resolution transmission electron microscopy (HRTEM) analysis to the nanowire indicates that the nanowire was single crystal with very good quality.

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